Panasonic XN0B301 Datasheet

Composite Transistors
XN1B301
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
Features
Two elements incorporated into one package. (Tr1 emitter is connected to Tr2 base.)
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
2SB709A+2SD601A
Absolute Maximum Ratings (Ta=25˚C)
Parameter Symbol Ratings Unit
Collector to base voltage Collector to emitter voltage
Tr1
Emitter to base voltage Collector current I Peak collector current Collector to base voltage Collector to emitter voltage Emitter to base voltage
Tr2
Collector current I Peak collector current Total power dissipation Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
–60 V –50 V
–7 V –100 mA –200 mA
60 V
50 V
7V 100 mA 200 mA 300 mW 150 ˚C
–55 to +150 ˚C
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
4
0.05
+0.2
-
2.9
1.9±0.10.8 3
0.95 0.95
0.1
+0.2
-
1.1
0.1 to 0.3
0 to 0.1
1 : Collector (Tr1) 4 : Base (Tr2) 2 : Collector (Tr2) Emitter (Tr1) 3 : Emitter (Tr2) 5 : Base (Tr1)
EIAJ : SC–74A Mini Type Pakage (5–pin)
Marking Symbol: 4Q
Internal Connection
Tr1
51
4
32
Tr2
15
2
+0.1
0.4±0.2
0.05
-
0.3
+0.1
Unit: mm
1.45±0.1
0.06
-
0.16
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h Collector to emitter saturation voltage Transition frequency f Collector output capacitance C
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V Collector to emitter voltage V Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h Collector to emitter saturation voltage Transition frequency f Collector output capacitance C
I I
V
I I
V
CBO
CEO
T
CBO
CEO
T
CBO
CEO
EBO
FE
CE(sat)
ob
CBO
CEO
EBO
FE
CE(sat)
ob
XN1B301
IC = –10µA, IE = 0 –60 V IC = –2mA, IB = 0 –50 V IE = –10µA, IC = 0 –7 V VCB = –20V, IE = 0 – 0.1 µA VCE = –10V, IB = 0 –100 µA VCE = –10V, IC = –2mA 160 460 IC = –100mA, IB = –10mA – 0.3 – 0.5 V VCB = –10V, IE = 1mA, f = 200MHz 80 MHz VCB = –10V, IE = 0, f = 1MHz 2.7 pF
IC = 10µA, IE = 0 60 V IC = 2mA, IB = 0 50 V IE = 10µA, IC = 0 7 V VCB = 20V, IE = 0 0.1 µA VCE = 10V, IB = 0 100 µA VCE = 10V, IC = 2mA 160 460 IC = 100mA, IB = 10mA 0.1 0.3 V VCB = 10V, IE = –2mA, f = 200MHz 150 MHz VCB = 10V, IE = 0, f = 1MHz 3.5 pF
2
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