Panasonic XN0B301 Datasheet
Composite Transistors
XN1B301
Silicon PNP epitaxial planer transistor (Tr1)
Silicon NPN epitaxial planer transistor (Tr2)
For general amplification
Features
■
●
Two elements incorporated into one package.
(Tr1 emitter is connected to Tr2 base.)
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SB709A+2SD601A
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Collector to base voltage
Collector to emitter voltage
Tr1
Emitter to base voltage
Collector current I
Peak collector current
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Tr2
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Overall
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
–60 V
–50 V
–7 V
–100 mA
–200 mA
60 V
50 V
7V
100 mA
200 mA
300 mW
150 ˚C
–55 to +150 ˚C
+0.2
-
0.3
2.8
+0.25
-
0.05
1.50.65±0.15 0.65±0.15
4
0.05
+0.2
-
2.9
1.9±0.10.8
3
0.95 0.95
0.1
+0.2
-
1.1
0.1 to 0.3
0 to 0.1
1 : Collector (Tr1) 4 : Base (Tr2)
2 : Collector (Tr2) Emitter (Tr1)
3 : Emitter (Tr2) 5 : Base (Tr1)
EIAJ : SC–74A
Mini Type Pakage (5–pin)
Marking Symbol: 4Q
Internal Connection
Tr1
51
4
32
Tr2
15
2
+0.1
0.4±0.2
0.05
-
0.3
+0.1
Unit: mm
1.45±0.1
0.06
-
0.16
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
●
Tr2
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Collector output capacitance C
I
I
V
I
I
V
CBO
CEO
T
CBO
CEO
T
CBO
CEO
EBO
FE
CE(sat)
ob
CBO
CEO
EBO
FE
CE(sat)
ob
XN1B301
IC = –10µA, IE = 0 –60 V
IC = –2mA, IB = 0 –50 V
IE = –10µA, IC = 0 –7 V
VCB = –20V, IE = 0 – 0.1 µA
VCE = –10V, IB = 0 –100 µA
VCE = –10V, IC = –2mA 160 460
IC = –100mA, IB = –10mA – 0.3 – 0.5 V
VCB = –10V, IE = 1mA, f = 200MHz 80 MHz
VCB = –10V, IE = 0, f = 1MHz 2.7 pF
IC = 10µA, IE = 0 60 V
IC = 2mA, IB = 0 50 V
IE = 10µA, IC = 0 7 V
VCB = 20V, IE = 0 0.1 µA
VCE = 10V, IB = 0 100 µA
VCE = 10V, IC = 2mA 160 460
IC = 100mA, IB = 10mA 0.1 0.3 V
VCB = 10V, IE = –2mA, f = 200MHz 150 MHz
VCB = 10V, IE = 0, f = 1MHz 3.5 pF
2
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