Panasonic XN0A554 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2

0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN6A554

Silicon NPN epitaxial planer transistor

For high speed switching

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

●

Low V

Basic Part Number of Element

■

●

2SC3757 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Rating
of
element

Overall

.

CE(sat)

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage

V
V

V
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature

I

T

CBO

CEO

EBO

C

CP

P

T

stg

40 V
40 V

5V
100 mA
300 mA

T

j

300 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Emitter (Tr2)
2 : Base (Tr2) 5 : Emitter (Tr1)
3 : Collector (Tr2) 6 : Base (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: DT

Internal Connection

61

5

43

Tr1

Tr2

Unit: mm

2

■

*1

*2

Electrical Characteristics (Ta=25˚C)

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage V
Transition frequency f
Collector output capacitance C
Turn-off time t
Turn-on time t
Storage time t

Ratio between 2 elements
Test Circuits

CBO

EBO

FE

hFE (small/large)*1VCE = 1V, IC = 10mA 0.5 0.99
V

CE(sat)

BE(sat)

T

ob

on

off

stg

VCB = 40V, IE = 0 0.1 µA
VEB = 4V, IC = 0 0.1 µA
VCE = 1V, IC = 10mA 60 320

IC = 10mA, IB = 1mA 0.17 0.25 V
IC = 10mA, IB = 1mA 1.0 V
VCE = 10V, IE = –10mA, f = 200MHz

450 MHz

VCB = 10V, IE = 0, f = 1MHz 2 6 pF

17

*2

17 ns
10

1

Composite Transistors XN6A554

P

— Ta

ton, t

T est Circuit t

off

0.1µF
V

220Ω

3.3kΩ

=10V

V

in

50Ω

3.3kΩ
V

=

bb

–3V

50Ω

V

out

Vin=10V

=3V

CC

50Ω

0.1µF

Test Circuit

stg

A

910Ω

500Ω

500Ω

=2V

V

bb

0.1µF

90Ω

VCC=10V

1kΩ

500

V

out

)

400

mW

(

T

300

T

V

in

10%

V

out

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.20.2 1.00.4 0.80.6

90%

t

on

I

— V

C

Collector to emitter voltage VCE (V

100

)

V

(

CE(sat)

0.3

0.1

0.03

30

10

0

V

in

V

out

(Wave form at A)

3

1

t

stg

V

10%

10%

CE(sat)

— I

C

25˚C

IC/IB=10

Ta=75˚C

–25˚C

V

in

V

out

10%

90%

t

off

CE

Ta=25˚C

IB=3.0mA

2.5mA

2.0mA

1.5mA

1.0mA

0.5mA

Collector to emitter saturation voltage V

0.01

0.1 0.3

)

1 3 10 30 100

Collector current IC (mA

)

200

100

Total power dissipation P

0

0 40 80 120 160

Ambient temperature Ta (˚C

V

— I

BE(sat)

100

)

V

(

30

BE(sat)

10

3

1

0.3

0.1

0.03

Base to emitter saturation voltage V

0.01
13

25˚C

10 30 100 300 1000

Collector current IC (mA

C

IC/IB=10

Ta=–25˚C
75˚C

)

)

hFE — I

600

FE

500

400

300

200

100

Forward current transfer ratio h

0

0.1 0.3

1 3 10 30 100

C

Ta=75˚C

25˚C

–25˚C

Collector current IC (mA

2

VCE=1V

)

fT — I

600

)

500

MHz

(

T

400

300

200

100

Transition frequency f

0

–1 –3

–10 –30 –100 –300 –1000

Emitter current IE (mA

E

VCE=10V
Ta=25˚C

)

Cob — V

6

CB

)
pF

(

5

ob

4

3

2

1

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V

f=1MHz

=0

I

E

Ta=25˚C

)