Panasonic XN06543 Datasheet

Composite Transistors

2.8

+0.2
–0.3

1.50.65±0.15 0.65±0.15

1

6

5

4

3

2

1.45±0.1

0.95 0.95

1.9±0.1

+0.25
–0.05

0.3

+0.1

–0.05

0.5

+0.1

–0.05

2.9

+0.2

–0.05

1.1

+0.2

–0.1

0.8

0.4±0.2
0 to 0.05

0.16

+0.1

–0.06

0.1 to 0.3

XN6543

Silicon NPN epitaxial planer transistor

For low-noise amplification (2GHz band)

Features

■

●

Two elements incorporated into one package.

●

Reduction of the mounting area and assembly cost by one half.

Basic Part Number of Element

■

●

2SC3904 × 2 elements

Absolute Maximum Ratings (Ta=25˚C)

■

Parameter Symbol Ratings Unit

Collector to base voltage

Rating

Collector to emitter voltage

of

Emitter to base voltage

element

Collector current I
Total power dissipation
Junction temperature

Overall

Storage temperature

V

CBO

V

CEO

V

EBO

C

P

T

T

j

T

stg

15 V
10 V

2V

65 mA
200 mW
150 ˚C

–55 to +150 ˚C

1 : Collector (Tr1) 4 : Base (Tr2)
2 : Base (Tr1) 5 : Emitter (Tr2)
3 : Collector (Tr2) 6 : Emitter (Tr1)

EIAJ : SC–74
Mini Type Package (6–pin)

Marking Symbol: 9Y

Internal Connection

Tr1

61

5

Unit: mm

2

43

Tr2

Electrical Characteristics (Ta=25˚C)

■

Parameter Symbol Conditions min typ max Unit

Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
Transition frequency f
Collector output capacitance C
Forward transfer gain | S
Power gain GUM VCE = 8V, IC = 20mA, f = 1.5GHz 10 dB
Noise figure NF VCE = 8V, IC = 7mA, f = 1.5GHz 2.2 3.0 dB

*1

Ratio between 2 elements

CBO

EBO

FE

hFE (small/large)*1VCE = 8V, IC = 20mA 0.5 0.99

T

ob

|

21e

VCB = 10V, IE = 0 1 µA
VEB = 1V, IC = 0 1 µA
VCE = 8V, IC = 20mA 50 120 300

VCE = 8V, IC = 20mA 7.0 8.5 GHz
VCB = 10V, IE = 0, f = 1MHz 0.6 1.0 pF

2

VCE = 8V, IC = 20mA, f = 1.5GHz 7 9 dB

1

Composite Transistors XN6543

PT — Ta IC — V

240

)

200

mW

(

T

160

120

80

40

Total power dissipation P

0

0 16040 12080

Ambient temperature Ta (˚C

V

— I

CE(sat)

10

)

V

(

CE(sat)

1

0.1

0.01

Collector to emitter saturation voltage V

0.001

0.1 0.3

Ta=75˚C

25˚C

–25˚C

1 3 10 30 100

Collector current IC (mA

)

C

IC/IB=10

)

CE

30

25

)
mA

(

20

C

15

10

Collector current I

5

0

012210486

Collector to emitter voltage VCE (V

hFE — I

C

240

FE

200

160

120

80

40

Forward current transfer ratio h

0

0.1 0.3

Ta=75˚C

25˚C

–25˚C

1 3 10 30 100

Collector current IC (mA

Ta=25˚C

IB=250µA

200µA

150µA

100µA

50µA

VCE=8V

)

IC — V

BE

120

100

)
mA

(

80

C

60

40

Collector current I

20

0

01.20.2 1.00.4 0.80.6

)

Base to emitter voltage VBE (V

Ta=75˚C –25˚C

fT — I

12

)

10

GHz

(

T

8

6

4

2

Transition frequency f

0

3 10 30 100

1

Collector current IC (mA

VCE=8V

25˚C

)

C

VCE=8V
f=1.5GHz
Ta=25˚C

)

)
pF

(

ob

Cob — V

1.2

1.0

0.8

0.6

0.4

0.2

CB

Collector output capacitance C

0

3 10 30 100

1

Collector to base voltage VCB (V

2

f=1MHz

=0

I

E

Ta=25˚C

GUM — I

12

10

)
dB

(

8

6

4

Power gain GUM

2

0

0.1 0.3

)

1 3 10 30 100

Collector current IC (mA

C

VCE=8V
f=1.5GHz
Ta=25˚C

6

5

)

dB

(

4

3

2

Noise figure NF

1

0

0.1 0.3 1 3 10 30 100

)

NF — I

C

VCE=8V
f=1.5GHz
Ta=25˚C

Collector current IC (mA

)