Panasonic XN06542 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN6542
Silicon NPN epitaxial planer transistor
For high frequency amplification, oscillation, and mixing (Tr1),
For medium-frequency amplification (Tr2)
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SC2480+2SC4444
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Tr1
Tr2
Overall
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
C
V
CBO
V
CEO
V
EBO
C
P
T
T
j
T
stg
30 V
20 V
3V
50 mA
45 V
35 V
4V
50 mA
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Base (Tr2)
2 : Base (Tr1) 5 : Emitter (Tr2)
3 : Collector (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 5Z
Internal Connection
61
5
43
Tr1
Tr2
Unit: mm
2
1
Composite Transistors
Electrical Characteristics (Ta=25˚C)
■
●
Tr1
XN6542
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Emitter to base voltage V
Forward current transfer ratio h
Base to emitter voltage V
Common emitter reverse transfer capacitance
Transition frequency f
CBO
EBO
FE
BE
C
re
T
IC = 100µA, IE = 0 30 V
IE = 10µA, IC = 0 3 V
VCB = 10V, IE = –2mA 25 250
VCB = 10V, IE = –2mA 720 mV
VCB = 10V, IE = –1mA, f = 10.7MHz
VCB = 10V, IE = –15mA, f = 200MHz
1000 1300 1600 MHz
1.0 1.5 pF
Power gain PG VCB = 10V, IE = –1mA, f = 100MHz 20 dB
Reverse transfer capacitance C
●
Tr2
rb
VCE = 6V, IC = 0, f = 1MHz 0.8 pF
Parameter Symbol Conditions min typ max Unit
Collector to base voltage V
Collector to emitter voltage V
Emitter to base voltage V
Collector cutoff current I
Forward current transfer ratio h
Collector to emitter saturation voltage
Transition frequency f
Common emitter reverse transfer capacitance
CEO
FE
V
T
C
CBO
CEO
EBO
CE(sat)
re
IC = 10µA, IE = 0 45 V
IC = 1mA, IB = 0 35 V
IE = 10µA, IC = 0 4 V
VCE = 20V, IB = 0 10 µA
VCB = 10V, IE = –10mA 20 50 100
IC = 20mA, IB = 2mA 0.5 V
VCB = 10V, IE = –10mA, f = 100MHz
VCB = 10V, IE = –1mA, f = 10.7MHz
300 500 MHz
1.5 pF
Power gain PG VCB = 10V, IE = –10mA, f = 58MHz 18 dB
Common characteristics chart
— Ta
P
T
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
)
2
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