Panasonic XN06537 Datasheet
Composite Transistors
2.8
+0.2
–0.3
1.50.65±0.15 0.65±0.15
1
6
5
4
3
2
1.45±0.1
0.95 0.95
1.9±0.1
+0.25
–0.05
0.3
+0.1
–0.05
0.5
+0.1
–0.05
2.9
+0.2
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.05
0.16
+0.1
–0.06
0.1 to 0.3
XN6537
Silicon NPN epitaxial planer transistor
For wide-band low-noise amplification
Features
■
●
Two elements incorporated into one package.
●
Reduction of the mounting area and assembly cost by one half.
Basic Part Number of Element
■
●
2SC3110 × 2 elements
Absolute Maximum Ratings (Ta=25˚C)
■
Parameter Symbol Ratings Unit
Rating
of
element
Overall
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current I
Peak collector current
Total power dissipation
Junction temperature
Storage temperature
V
CBO
V
CEO
V
EBO
C
I
CP
P
T
T
j
T
stg
15 V
12 V
2.5 V
30 mA
50 mA
300 mW
150 ˚C
–55 to +150 ˚C
1 : Collector (Tr1) 4 : Base (Tr2)
2 : Base (Tr1) 5 : Emitter (Tr2)
3 : Collector (Tr2) 6 : Emitter (Tr1)
EIAJ : SC–74
Mini Type Package (6–pin)
Marking Symbol: 7H
Internal Connection
61
5
Tr1
Unit: mm
2
Electrical Characteristics (Ta=25˚C)
■
43
Tr2
Parameter Symbol Conditions min typ max Unit
Collector cutoff current I
Emitter cutoff current I
Forward current transfer ratio h
Forward current transfer hFE ratio
hFE (small/large)*1VCE = 10V, IC = 10mA 0.5 0.99
Transition frequency f
Collector output capacitance C
Forward transfer gain | S
CBO
EBO
FE
T
ob
21e
2
|
VCB = 10V, IE = 0 100 nA
VEB = 2V, IC = 0 1 µA
VCE = 10V, IC = 10mA 40
VCE = 10V, IC = 10mA, f = 200MHz 4.5 GHz
VCB = 10V, IE = 0, f = 1MHz 1.2 pF
VCE = 10V, IC = 20mA, f = 0.8GHz 12 dB
Power gain GUM VCE = 10V, IC = 20mA, f = 0.8GHz 14 dB
Noise figure NF VCE = 10V, IC = 5mA, f = 0.8GHz 1.3 dB
*1
Ratio between 2 elements
1
Composite Transistors
XN6537
PT — Ta IC — V
500
)
400
mW
(
T
300
200
100
Total power dissipation P
0
0 40 80 120 160
Ambient temperature Ta (˚C
V
— I
CE(sat)
100
)
V
(
30
CE(sat)
10
3
1
0.3
0.1
25˚C
0.03
Collector to emitter saturation voltage V
0.01
0.1 0.3
Ta=75˚C
–25˚C
1 3 10 30 100
C
Collector current IC (mA
)
IC/IB=10
)
CE
30
25
)
mA
(
20
C
15
10
Collector current I
5
0
012210486
IB=300µA
Collector to emitter voltage VCE (V
hFE — I
240
FE
200
160
120
80
40
Forward current transfer ratio h
0
0.1 0.3
Ta=75˚C
–25˚C
1 3 10 30 100
C
VCE=10V
25˚C
Collector current IC (mA
Ta=25˚C
250µA
200µA
150µA
100µA
50µA
)
IC — V
60
50
)
mA
(
C
Collector current I
)
Ta=75˚C –25˚C
40
30
20
10
0
02.01.61.20.80.4
Base to emitter voltage VBE (V
8
25˚C
fT — I
BE
C
VCE=10V
VCE=10V
Ta=25˚C
)
)
GHz
6
(
T
4
2
Transition frequency f
0
–1 –3 –10 –30 –100
Collector current IC (mA
)
Cob — V
1.2
CB
)
pF
(
1.0
ob
0.8
0.6
0.4
0.2
Collector output capacitance C
0
3 10 30 100
1
Collector to base voltage VCB (V
2
f=1MHz
=0
I
E
Ta=25˚C
NF — I
8
7
)
6
dB
(
5
4
3
Noise figure NF
2
1
0
1 3 10 30 100
)
Collector current IC (mA
C
Rg=50Ω
=10V
V
CE
f=800MHz
0.6
0.4
0.2
0
–0.2
–0.4
–0.6
)
0.8
–0.8
800MHz
500MHz
S11, S
1
1000MHz
S
11
–1
22
1000MHz
1.5
–1.5
S
22
800MHz
500MHz
VCE=10V
=20mA
I
C
2
E: earth
3
4
5
10
101.5 54321.8.6.4.2
–10
–5
–4
–3
–2
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