This product complies with the RoHS Directive (EU 2002/95/EC).
3
(G)
(S)
4
1
(E)2(B)
(C)6(D)
5
Tr
FET
Multi Chip Discrete
UP05C8PG
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Costs can be reduced through downsizing of the equipment and reduction of
the number of parts.
Basic Part Number
2SC3932G + CCD load device
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
Tr
(Base open)
Emitter-base voltage
(Collector open)
Collector current I
CCD
Limiting element voltage V
load
device
Overall
Limiting element current I
Total power dissipation
*
Junction temperature T
Storage temperature T
Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm
V
CBO
V
CEO
V
EBO
C
max
max
P
T
j
stg
30 V
20 V
3 V
50 mA
40 V
10 mA
125 mW
125
–55 to +125
°C
°C
Package
Code
SSMini6-F2
Pin Name
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
Marking Symbol: 4X
Internal Connection
Publication date: March 2008 SJJ00401AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
0 42 8 106 12
0
18
16
14
20
2
4
12
10
6
8
Collector current I
C
(
mA
)
Collector-emitter voltage VCE (V
)
UP05C8PG_IC-V
CE
Ta = 25°C
IB = 100 µA
60 µA
20µA
40µA
80 µA
0 0.4 0.60.2 0.8 1.0
0
40
30
35
45
5
20
25
15
10
Collector current I
C
(
mA
)
Base current IB (mA
)
UP05C8PG_IC-I
B
VCE = 6 V
0 0.4 0.60.2 1.20.8 1.0 1.4
0
40
50
10
20
30
Collector current I
C
(
mA
)
Base-emitter voltage VBE (V
)
UP05C8PG_IC-V
BE
VCE = 6 V
Ta = 85°C
−25°C
25°C
0 40 80 120
0
140
120
100
80
40
20
60
Total power dissipation P
T
(
mW
)
Ambient temperature Ta (°C
)
UN05C8PG_PT-T
a
UP05C8PG
Electrical Characteristics Ta = 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Emitter-base voltage (Collector open) V
Base-emitter voltage V
Forward current transfer ratio h
Transition frequency
*
CBOIC
EBOIE
BE
FE
f
T
Power gain G
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
: Pulse measurement
*
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
= 100 mA, IE = 0 30 V
= 10 mA, IC = 0 3 V
VCE = 10 V, IC = 2 mA 720 mV
VCE = 10 V, IC = 2 mA 100 250
VCB = 10 V, IE = -15 mA, f = 200 MHz 1 300 MHz
VCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB
P
Pinchi off current I
Output impedance Z
VDS = 8 V, VG = 0 5.0 7.0 mA
P
VDS = V, VG = 0 0.02 MW
O
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
PT T
a
Characteristics charts of Tr
IC VCE IC IB IC V
BE
2 SJJ00401AED