Panasonic UP05C8PG User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

3

(G)

(S)

4

1

(E)2(B)

(C)6(D)

5

Tr

FET

Multi Chip Discrete

UP05C8PG

Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)

For CCD output circuits

 Features

 Two elements incorporated into one package (Tr + CCD load device)
 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts.

 Basic Part Number

 2SC3932G + CCD load device

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

Tr

(Base open)

Emitter-base voltage

(Collector open)

Collector current I

CCD

Limiting element voltage V

load

device

Overall

Limiting element current I

Total power dissipation

*

Junction temperature T

Storage temperature T

Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm

V

CBO

V

CEO

V

EBO

C

max

max

P

T

j

stg

30 V

20 V

3 V

50 mA

40 V

10 mA

125 mW

125

–55 to +125

°C

°C

 Package

Code

SSMini6-F2
Pin Name

1: Emitter 4: Source

2: Base 5: Drain

3: Gate 6: Collector

 Marking Symbol: 4X

 Internal Connection

Publication date: March 2008 SJJ00401AED 1

This product complies with the RoHS Directive (EU 2002/95/EC).

0 42 8 106 12

0

18

16

14

20

2

4

12

10

6

8

Collector current I

C

(

mA

)

Collector-emitter voltage VCE (V

)

UP05C8PG_IC-V

CE

Ta = 25°C

IB = 100 µA

60 µA

20µA

40µA

80 µA

0 0.4 0.60.2 0.8 1.0

0

40

30

35

45

5

20

25

15

10

Collector current I

C

(

mA

)

Base current IB (mA

)

UP05C8PG_IC-I

B

VCE = 6 V

0 0.4 0.60.2 1.20.8 1.0 1.4

0

40

50

10

20

30

Collector current I

C

(

mA

)

Base-emitter voltage VBE (V

)

UP05C8PG_IC-V

BE

VCE = 6 V

Ta = 85°C

−25°C

25°C

0 40 80 120

0

140

120

100

80

40

20

60

Total power dissipation P

T

(

mW

)

Ambient temperature Ta (°C

)

UN05C8PG_PT-T

a

UP05C8PG

 Electrical Characteristics Ta = 25°C±3°C

 Tr

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

Base-emitter voltage V

Forward current transfer ratio h

Transition frequency

*

CBOIC

EBOIE

BE

FE

f

T

Power gain G

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

: Pulse measurement

*

 CCD Load Device

Parameter Symbol Conditions Min Typ Max Unit

= 100 mA, IE = 0 30 V

= 10 mA, IC = 0 3 V

VCE = 10 V, IC = 2 mA 720 mV

VCE = 10 V, IC = 2 mA 100 250

VCB = 10 V, IE = -15 mA, f = 200 MHz 1 300 MHz

VCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB

P



Pinchi off current I

Output impedance Z

VDS = 8 V, VG = 0 5.0 7.0 mA

P

VDS = V, VG = 0 0.02 MW

O

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Common characteristics chart

PT  T

a

Characteristics charts of Tr

IC  VCE IC  IB IC  V

BE

2 SJJ00401AED