Panasonic UP05C8GF User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
3
(G)
(S)
4
1
(E)2(B)
(C)6(D)
5
Tr
FET
Multi Chip Discrete
UP05C8GF
Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)
For CCD output circuits
Features
Two elements incorporated into one package (Tr + CCD load device)
Downsizing of the equipment and costs can be reduced through reduction of
the number of parts
Basic Part Number
2SC3932 + CCD load device
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage
(Emitter open)
Collector-emitter voltage
Tr
(Base open)
Emitter-base voltage
(Collector open)
Collector current I
CCD
load device
Overall
Limiting element voltage V
Limiting element current I
Total power dissipation
*
Junction temperature T
Storage temperature T
Note) *: Measuring on substrate at 17 mm × 10 mm × 1 mm
V
CBO
V
CEO
V
EBO
C
max
max
P
T
j
stg
30 V
20 V
3 V
50 mA
40 V
10 mA
125 mW
125
°C
-55 to +125 °C
Package
Code
SSMini6-F2
Pin Name
1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
Marking Symbol: 4V
Internal Connection
Publication date: January 2008 SJJ00352BED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
UP05C8GF
Electrical Characteristics Ta = 25°C±3°C
Tr
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Emitter-base voltage (Collector open) V
Base-emitter voltage V
Forward current transfer ratio h
Transition frequency
*
CBOIC
EBOIE
BE
FE
f
T
Power gain PG VCB = 10 V, IE = -1 mA, f = 100 MHz 20 dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Pulse measurement
CCD Load Device
Parameter Symbol Conditions Min Typ Max Unit
= 100 mA, IE = 0 30 V
= 10 mA, IC = 0 3 V
VCE = 10 V, IC = 2 mA 720 mV
VCE = 10 V, IC = 2 mA 100 250
VCB = 10 V, IE = -15 mA, f = 200 MHz 1 300 MHz
Pinchi off current I
Output impedance Z
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
VDS = 10 V, VG = 0 3.8 5.2 mA
P
VDS = 10 V, VG = 0 0.05 MW
O
2 SJJ00352BED
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