Panasonic UP05C8B User Manual

Multi Chip Discrete

3

(G)

(S)

4

1

(E)2(B)

(C)6(D)

5

Tr

FET

Unit: mm

1: Emitter 4: Source
2: Base 5: Drain
3: Gate 6: Collector
SSMini6-F1 Package

(0.30) 0.10±0.02

6 5 4

1 2 3

5°

5°

0.20

+0.05
–0.02

1.60±0.050.55±0.05

0.10 max.

0 to 0.02

(0.20)

1.60±0.05

1番ピン端子表示

1.20±0.05

(0.20)

1.00±0.05

(0.50)(0.50)

UP05C8B

Silicon NPN epitaxial planar type (Tr)
Silicon epitaxial planar type (CCD load device)

For CCD output circuits

 Features

 Two elements incorporated into one package (Tr + CCD load device)
 Costs can be reduced through downsizing of the equipment and reduction of

the number of parts.

 Basic Part Number

 2SC3931 + CCD load device

 Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage

(Emitter open)

Collector-emitter voltage

Tr

(Base open)

Emitter-base voltage

(Collector open)

Collector current I

CCD

Limiting element voltage V

load

device

Overall

Limiting element current I

Total power dissipation

*

Junction temperature T

Storage temperature T

Note) * : Measuring on substrate at 17 mm × 10 mm × 1 mm

V

CBO

V

CEO

V

EBO

C

max

max

P

T

j

stg

30 V

20 V

3 V

15 mA

40 V

10 mA

125 mW

125

–55 to +125

°C

°C

Marking Symbol: 4F

Internal Connection

Publication date: November 2005 SJJ00333AED 1

UP05C8B

0 40 80 120

0

140

120

100

80

40

20

60

Total power dissipation P

T

(

mW

)

Ambient temperature Ta (°C

)

UN05C8B_PT-T

a

 Electrical Characteristics Ta = 25°C±3°C

 Tr

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Emitter-base voltage (Collector open) V

Base-emitter voltage V

Forward current transfer ratio h

Reverse transfer capacitance

(Common emitter)

Transition frequency f

CBOIC

EBOIE

BE

FE

C

T

Noise figure NF VCB = 6 V, IE = -1 mA, f = 100 MHz 3.3 dB

Power gain G

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

 CCD Load Device

Parameter Symbol Conditions Min Typ Max Unit

= 10 mA, IE = 0 30 V

= 10 mA, IC = 0 3 V

VCE = 6 V, IC = 1 mA 720 mV

VCE = 6 V, IC = 1 mA 65 160

VCB = 6 V, IE = -1 mA, f = 10.7 MHz 0.8 pF

re

VCB = 6 V, IE = -1 mA, f = 200 MHz 640 MHz

VCB = 6 V, IE = -1 mA, f = 100 MHz 24 dB

P



Pinchi off current I

Output impedance Z

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

VDS = 10 V, VG = 0 3.5 5.5 mA

P

VDS = 10 V, VG = 0 0.05 MW

O

Common characteristics chart

PT  T

a

2 SJJ00333AED