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B
R
1
(10 kΩ)
E
C
查询UNR32A5供应商
Transistors with built-in Resistor
UNR32A5
Silicon NPN epitaxial planar type
For digital circuits
■ Features
• Suitable for high-density mounting and downsizing of the equipment
• Contribute to low power consumption
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector current I
Total power dissipation P
Junction temperature T
Storage temperature T
CBO
CEO
C
T
j
stg
50 V
50 V
80 mA
100 mW
125 °C
−55 to +125 °C
+0.05
0.33
–0.02
3
12
+0.05
0.23
–0.02
(0.40)(0.40)
±0.05
0.80
1.20
±0.05
5°
Marking Symbol: HC
+0.05
0.10
–0.02
±0.05
±0.05
0.80
1.20
5°
0.15 min.
±0.03
0.52
0 to 0.01
1: Base
2: Emitter
3: Collector
SSSMini3-F1 Package
Unit: mm
0.15 min.
0.15 max.
Internal Connection
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) V
Collector-emitter voltage (Base open) V
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio h
Collector-emitter saturation voltage V
Output voltage high-level V
Output voltage low-level V
CBOIC
CEOIC
I
CBO
I
CEO
I
EBO
FE
CE(sat)IC
OH
OL
Input resistance R
Transition frequency f
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
= 10 µA, IE = 050V
= 2 mA, IB = 050V
VCB = 50 V, IE = 0 0.1 µA
VCE = 50 V, IB = 0 0.5 µA
VEB = 6 V, IC = 0 0.01 mA
VCE = 10 V, IC = 5 mA 160 460
= 10 mA, IB = 0.3 mA 0.25 V
VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V
VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V
1
VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz
T
−30% 10 +30% kΩ
Publication date: October 2003 SJH00057BED
1
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UNR32A5
PT T
120
)
100
mW
(
T
80
60
40
20
Total power dissipation P
0
0 80 12040
Ambient temperature Ta (°C
hFE I
400
FE
300
200
Ta = 85°C
25°C
−25°C
a
C
VCE = 10 V
IC V
80
0.9 mA
0.8 mA
60
(mA)
C
40
20
Collector current I
0
012108264
)
Collector-emitter voltage VCE (V)
Cob V
10
(pF)
ob
C
CE
CB
IB = 1.0 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
0.3 mA
0.2 mA
0.1 mA
Ta = 25°C
f = 1 MHz
= 25°C
T
a
10
(V)
CE(sat)
1
0.1
Collector-emitter saturation voltage V
0.01
100
V
I
CE(sat)
IC / IB = 10
Ta = 85°C
25°C
0.1 1 10 100 1 000
C
−25°C
Collector current IC (mA)
IO V
IN
VO = 5 V
= 25°C
T
a
)
mA
(
O
10
100
Forward current transfer ratio h
0
1 10 100
Collector current IC (mA
VIN I
100
)
V
(
10
IN
1
Input voltage V
0.1
1 10 100
O
Output current IO (mA
)
VO = 0.2 V
= 25°C
T
a
)
Collector output capacitance
(Common base, input open circuited)
1
04010 3020
Collector-base voltage VCB (V)
Output current I
1
021
Input voltage VIN (V
)
2
SJH00057BED
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Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of
the products or technical information described in this material and controlled under the "Foreign Exchange
and Foreign Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuits examples of the products. It neither warrants non-infringement of intellectual property right
or any other rights owned by our company or a third party, nor grants any license.
(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical
information as described in this material.
(4) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household
appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without notice for
modification and/or improvement. At the final stage of your design, purchasing, or use of the products,
therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications
satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating,
the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be
liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of
break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as
redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(7) When using products for which damp-proof packing is required, observe the conditions (including shelf life
and amount of time let standing of unsealed items) agreed upon when specification sheets are individually
exchanged.
(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written
permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP
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