Panasonic UNR32A5 User Manual

UNR32A5

Transistors with built-in Resistor

UNR32A5

Silicon NPN epitaxial planar type

For digital circuits

■ Features

•Suitable for high-density mounting and downsizing of the equipment

•Contribute to low power consumption

■ Absolute Maximum Ratings Ta = 25°C

Parameter	Symbol	Rating	Unit
Collector-base voltage (Emitter open)	VCBO	50	V
Collector-emitter voltage (Base open)	VCEO	50	V
Collector current	IC	80	mA
Total power dissipation	PT	100	mW
Junction temperature	Tj	125	°C
Storage temperature	Tstg	−55 to +125	°C

						Unit: mm
0.33–0.02+0.05					0.10–0.02+0.05
	3
			0.80±0.05	1.20±0.05	°		0.15 min.
0.23–0.02+0.05	1	2			5
			min.
	(0.40) (0.40)
	0.80±0.05
			0.15
	1.20±0.05
	5°
			to 0.01	0.52±0.03
							max.
			0			1: Base	0.15
						2: Emitter
						3: Collector
				SSSMini3-F1 Package

Marking Symbol: HC

Internal Connection

R1 (10 kΩ) C

B

E

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter	Symbol	Conditions	Min	Typ	Max	Unit
Collector-base voltage (Emitter open)	VCBO	IC = 10 µA, IE = 0	50			V
Collector-emitter voltage (Base open)	VCEO	IC = 2 mA, IB = 0	50			V
Collector-base cutoff current (Emitter open)	ICBO	VCB = 50 V, IE = 0			0.1	µA
Collector-emitter cutoff current (Base open)	ICEO	VCE = 50 V, IB = 0			0.5	µA
Emitter-base cutoff current (Collector open)	IEBO	VEB = 6 V, IC = 0			0.01	mA
Forward current transfer ratio	hFE	VCE = 10 V, IC = 5 mA	160		460
Collector-emitter saturation voltage	VCE(sat)	IC = 10 mA, IB = 0.3 mA			0.25	V
Output voltage high-level	VOH	VCC = 5 V, VB = 0.5 V, RL = 1 kΩ	4.9			V
Output voltage low-level	VOL	VCC = 5 V, VB = 2.5 V, RL = 1 kΩ			0.2	V
Input resistance	R1		−30%	10	+30%	kΩ
Transition frequency	fT	VCB = 10 V, IE = −2 mA, f = 200 MHz		150		MHz

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: October 2003

SJH00057BED

1

UNR32A5
			PT Ta						IC VCE							VCE(sat) IC
	120						80					IB = 1.0 mA		(V)	10	IC / IB = 10
								0.9 mA
														CE(sat)
(mW)	100						60	0.8 mA				0.7 mA
												0.4 mA
												0.6 mA
						(mA)						0.5 mA		V
T												0.3 mA
dissipationpowerTotal P	80													saturationemitter-Collectorvoltage	1
						C
												0.2 mA
						currentCollectorI
	60						40
																	Ta = 85°C
	40											0.1 mA			0.1
							20										−25°C
	20															25°C
												Ta = 25°C
	0	40	80		120		0	2	4	6	8	10	12		0.01	1	10		100	1 000
	0						0								0.1
		Ambient temperature			Ta (°C)		Collector-emitter voltage					VCE (V)				Collector current		IC	(mA)
			hFE IC						Cob VCB								IO VIN
					VCE = 10 V	(pF)	10				f = 1 MHz				100			VO = 5 V
	400	Ta = 85°C				ob					Ta = 25°C							Ta = 25°C
FE						C								Outputcurrent I
currentForwardtransfer ratio h						capacitanceoutputCollector inputbase,(Commonopen circuited)
	300		25°C											(mA)
														O
			−25°C												10
	200
	100
	0		10		100		1	10		20		30	40		1		1		2
	1						0								0
		Collector current I		C	(mA)			Collector-base voltage				VCB (V)				Input voltage V		IN	(V)
			VIN IO
	100				VO = 0.2 V
					Ta = 25°C

	(V)	10
	IN
	V
	voltage
	Input	1
		0.1

1

10

100

Output current IO (mA)

2	SJH00057BED