Panasonic UNR32A5 User Manual

B

R

1

(10 kΩ)

E

C

查询UNR32A5供应商

Transistors with built-in Resistor

UNR32A5

Silicon NPN epitaxial planar type

For digital circuits

■ Features

• Suitable for high-density mounting and downsizing of the equipment

• Contribute to low power consumption

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Collector current I

Total power dissipation P

Junction temperature T

Storage temperature T

CBO

CEO

C

T

j

stg

50 V

50 V

80 mA

100 mW

125 °C

−55 to +125 °C

+0.05

0.33

–0.02

3

12

+0.05

0.23

–0.02

(0.40)(0.40)

±0.05

0.80

1.20

±0.05

5°

Marking Symbol: HC

+0.05

0.10

–0.02

±0.05

±0.05

0.80

1.20
5°

0.15 min.

±0.03

0.52

0 to 0.01

1: Base
2: Emitter
3: Collector

SSSMini3-F1 Package

Unit: mm

0.15 min.

0.15 max.

Internal Connection

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Collector-base voltage (Emitter open) V

Collector-emitter voltage (Base open) V

Collector-base cutoff current (Emitter open)

Collector-emitter cutoff current (Base open)

Emitter-base cutoff current (Collector open)

Forward current transfer ratio h

Collector-emitter saturation voltage V

Output voltage high-level V

Output voltage low-level V

CBOIC

CEOIC

I

CBO

I

CEO

I

EBO

FE

CE(sat)IC

OH

OL

Input resistance R

Transition frequency f

Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

= 10 µA, IE = 050V

= 2 mA, IB = 050V

VCB = 50 V, IE = 0 0.1 µA

VCE = 50 V, IB = 0 0.5 µA

VEB = 6 V, IC = 0 0.01 mA

VCE = 10 V, IC = 5 mA 160 460 

= 10 mA, IB = 0.3 mA 0.25 V

VCC = 5 V, VB = 0.5 V, RL = 1 kΩ 4.9 V

VCC = 5 V, VB = 2.5 V, RL = 1 kΩ 0.2 V

1

VCB = 10 V, IE = −2 mA, f = 200 MHz 150 MHz

T

−30% 10 +30% kΩ

Publication date: October 2003 SJH00057BED

1

UNR32A5

PT  T

120

)

100

mW
(

T

80

60

40

20

Total power dissipation P

0

0 80 12040

Ambient temperature Ta (°C

hFE  I

400

FE

300

200

Ta = 85°C

25°C

−25°C

a

C

VCE = 10 V

IC  V

80

0.9 mA

0.8 mA

60

(mA)

C

40

20

Collector current I

0

012108264

)

Collector-emitter voltage VCE (V)

Cob  V

10

(pF)

ob

C

CE

CB

IB = 1.0 mA

0.7 mA

0.6 mA

0.5 mA

0.4 mA

0.3 mA

0.2 mA

0.1 mA

Ta = 25°C

f = 1 MHz

= 25°C

T

a

10

(V)

CE(sat)

1

0.1

Collector-emitter saturation voltage V

0.01

100

V

 I

CE(sat)

IC / IB = 10

Ta = 85°C

25°C

0.1 1 10 100 1 000

C

−25°C

Collector current IC (mA)

IO  V

IN

VO = 5 V

= 25°C

T

a

)

mA
(

O

10

100

Forward current transfer ratio h

0

1 10 100

Collector current IC (mA

VIN  I

100

)

V

(

10

IN

1

Input voltage V

0.1
1 10 100

O

Output current IO (mA

)

VO = 0.2 V

= 25°C

T

a

)

Collector output capacitance

(Common base, input open circuited)

1

04010 3020

Collector-base voltage VCB (V)

Output current I

1

021

Input voltage VIN (V

)

2

SJH00057BED