Panasonic SPP07N60C3, SPB07N60C3, SPI07N60C3, SPA07N60C3 User Manual

	Preliminary data	SPP07N60C3, SPB07N60C3
		SPI07N60C3, SPA07N60C3
Cool MOS™ Power Transistor
Feature			Product Summary
• New revolutionary high voltage technology			VDS @ Tjmax	650	V
• Ultra low gate charge			RDS(on)	0.6	Ω
• Periodic avalanche rated			ID	7.3	A
• Extreme dv/dt rated

•High peak current capability

•Improved transconductance

•150 °C operating temperature

P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1

3

1 2

P-TO220-3-31

Type	Package	Ordering Code	Marking
SPP07N60C3	P-TO220-3-1	Q67040-S4422	07N60C3
SPB07N60C3	P-TO263-3-2	Q67040-S4394	07N60C3
SPI07N60C3	P-TO262-3-1	Q67040-S4424	07N60C3
SPA07N60C3	P-TO220-3-31	Q67040-S4409	07N60C3

Maximum Ratings

Parameter		Symbol		Value		Unit
			SPP_B_I		SPA
Continuous drain current		ID			7.31)	A
T	= 25 °C		7.3
C					4.61)
T	= 100 °C		4.6
C
Pulsed drain current, tp limited by Tjmax		ID puls	21.9		21.9	A
Avalanche energy, single pulse		EAS	230		230	mJ
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)		EAR	0.5		0.5
ID=7.3A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax		IAR	7.3		7.3	A
Reverse diode dv/dt		dv/dt	6		6	V/ns
IS = 7.3 A, VDS < VDD, di/dt=100A/ s, Tjmax=150°C
Gate source voltage static		VGS	±20		±20	V
Gate source voltage AC (f >1Hz)		VGS	± 30		± 30
Power dissipation, TC = 25°C		Ptot	83		32	W
Operating and storage temperature		Tj , Tstg	-55...+150			°C

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Preliminary data

Thermal Characteristics

Parameter	Symbol		Values		Unit
		min.	typ.	max.
Characteristics
Thermal resistance, junction - case	RthJC	-	-	1.5	K/W
Thremal resistance, junction - case, FullPAK	RthJC_FP	-	-	3.9
Thermal resistance, junction - ambient, leaded	RthJA	-	-	62
Thermal resistance, junction - ambient, FullPAK	RthJA_FP	-	-	80
SMD version, device on PCB:	RthJA
@ min. footprint		-	-	62
@ 6 cm2 cooling area 3)		-	35	-
Linear derating factor		-	-	0.66	W/K
Linear derating factor, FullPAK		-	-	0.25
Soldering temperature,	Tsold	-	-	260	°C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage	V(BR)DSS	600	-	-	V
VGS=0V, ID=0.25mA
Drain-source avalanche breakdown voltage	V(BR)DS	-	700	-
VGS=0V, ID=7.3A
Gate threshold voltage, VGS = VDS	VGS(th)	2.1	3	3.9
ID = 350 A
Zero gate voltage drain current	IDSS				µA
VDS = 600 V, VGS = 0 V, Tj = 25 °C		-	0.5	1
VDS = 600 V, VGS = 0 V, Tj = 150 °C		-	-	100
Gate-source leakage current	IGSS	-	-	100	nA
VGS=30V, VDS=0V
Drain-source on-state resistance	RDS(on)				Ω
VGS=10V, ID=4.6A, Tj=25°C		-	0.54	0.6
VGS=10V, ID=4.6A, Tj=150°C		-	1.57	1.74
Gate input resistance	RG	-	0.8	-
f = 1 MHz, open drain

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Preliminary data

Electrical Characteristics

Parameter	Symbol	Conditions		Values		Unit
			min.	typ.	max.
Characteristics
Transconductance	gfs	VDS≥ 2*ID*RDS(on)max,	-	6	-	S
		ID=4.6A
Input capacitance	Ciss	VGS=0V, VDS=25V,	-	790	-	pF
Output capacitance	Coss	f=1MHz	-	260	-
Reverse transfer capacitance	Crss		-	16	-
Effective output capacitance,4)	Co(er)	VGS=0V,	-	30	-
energy related		VDS=0V to 480V
Effective output capacitance,5)	Co(tr)		-	55	-
time related
Turn-on delay time	t	VDD=380V, VGS=0/13V,	-	6	-	ns
	d(on)
Rise time	tr	ID=7.3A,	-	3.5	-
Turn-off delay time	t	RG=12Ω , Tj=125°C	-	60	100
	d(off)
Fall time	tf		-	7	15
Gate Charge Characteristics
Gate to source charge	Qgs	VDD=480V, ID=7.3A	-	3	-	nC
Gate to drain charge	Qgd		-	9.2	-
Gate charge total	Q	VDD=480V, ID=7.3A,	-	21	27
	g
		VGS=0 to 10V
Gate plateau voltage	V(plateau)	VDD=480V, ID=7.3A	-	5.5	-	V

1Limited only by maximum temperature

2Repetitve avalanche causes additional power losses that can be calculated asPAV =EAR*f.

3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.

4Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 5Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.

Preliminary data

Electrical Characteristics

Parameter	Symbol	Conditions		Values		Unit
			min.	typ.	max.
Characteristics
Inverse diode continuous	IS	TC=25°C	-	-	7.3	A
forward current
Inverse diode direct current,	ISM		-	-	21.9
pulsed
Inverse diode forward voltage	VSD	VGS=0V, IF=IS	-	1	1.2	V
Reverse recovery time	trr	VR=480V, IF=IS ,	-	400	600	ns
Reverse recovery charge	Qrr	diF/dt=100A/µs	-	4	-	µC
Peak reverse recovery current	Irrm		-	28	-	A
Peak rate of fall of reverse	dirr/dt	Tj=25°C	-	800	-	A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol																							Value																																																								Unit																							Symbol																																							Value																Unit
	SPP_B_I																																														SPA																																																																																SPP_B_I																						SPA
Rth1	0.024																																										0.024																																				K/W																							Cth1																							0.0001354																			0.00012													Ws/K
Rth2	0.052																																										0.047																																																											Cth2																							0.0004561																			0.000455
Rth3	0.085																																										0.065																																																											Cth3																							0.0007717																			0.000638
Rth4	0.183																																										0.177																																																											Cth4																							0.0017																			0.00114
Rth5	0.199																																										0.457																																																											Cth5																							0.00778																			0.00737
Rth6	0.073																																										2.516																																																											Cth6																							0.07																			0.412
																																																																																																																																		External Heatsink
																																							Tj													Rth1																																																		Rth,n																			Tcase
					Ptot (t)
																																												Cth1																												Cth2																													Cth,n
																																																																																																																										Tamb

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Preliminary data

1 Power dissipation

2 Power dissiaption FullPAK

Ptot = f (TC)										Ptot = f (TC)
	100	SPP07N60C3								35
	W									W
	80
	70									25
tot										tot
P	60									P
										20
	50
	40									15
	30									10
	20
	10									5
	00	20	40	60	80	100	120	°C	160	00	20	40	60	80	100	120	°C	150
								TC									TC

3 Safe operating area FullPAK

4 Transient thermal impedance FullPAK

ID = f (VDS)					ZthJC = f (tp)
parameter: D = 0, TC = 25°C					parameter: D = tp/t
10 2					10 1
A					K/W
10 1					10 0
D					thJC
I					Z
10 0					10 -1
											D = 0.5
											D = 0.2
	tp = 0.001 ms										D = 0.1
											D = 0.05
10 -1	tp = 0.01 ms				10 -2
											D = 0.02
	tp = 0.1 ms
											D = 0.01
	tp = 1 ms
											single pulse
	tp = 10 ms
	DC
10 -2	10 1	10 2	V	10 3	10 -3	10 -6	10 -5	10 -4	10 -3	10 -2	10 -1	s	10 1
10 0					10 -7
			VDS								tp

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