Page 1
Cool MOS™ Power Transistor
Preliminary data
SPP07N60C3, SPB07N60C3
SPI07N60C3, SPA07N60C3
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• High peak current capability
P-TO262-3-1 P-TO220-3-1 P-TO220-3-31 P-TO263-3-2
• Improved transconductance
• 150 °C operating temperature
P-TO220-3-31
3
2
1
Type Package Ordering Code
SPP07N60C3 P-TO220-3-1 Q67040-S4422
SPB07N60C3 P-TO263-3-2 Q67040-S4394
SPI07N60C3 P-TO262-3-1 Q67040-S4424
SPA07N60C3 P-TO220-3-31
Q67040-S4409
Maximum Ratings
Product Summary
VDS @ T
R
I
D
Marking
07N60C3
07N60C3
07N60C3
07N60C3
DS(on
jmax
650 V
0.6 Ω
7.3 A
Parameter Symbol Value Unit
SPA
7.3
4.6
A
1)
1)
Continuous drain current
TC = 25 °C
T
= 100 °C
C
Pulsed drain current, t p limited by T
max
Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by T
I
=7.3A, V DD=50V
D
Avalanche current, repetitive t
limited by T
R
Reverse diode dv /dt
IS = 7.3 A, V
< V DD, di /dt =100A/µs, T
DS
jmax
=150°C
jmax
max
2)
I
I
E
E
I
dv /dt 6 6 V/ns
Gate source voltage static V
Gate source voltage AC (f >1Hz) V
Power dissipation, T
= 25°C P
C
D
D puls
AS
AR
R
GS
GS
to
SPP_B_I
7.3
4.6
21.9 21.9 A
230 230 mJ
0.5 0.5
7.3 7.3 A
±20 ±20 V
± 30 ± 30
83 32 W
Operating and storage temperature T
Page 1
T
,
st
-55...+150 °C
2002-06-24
Page 2
Preliminary data
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case R
Thremal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded R
Thermal resistance, junction - ambient, FullPAK R
SMD version, device on PCB:
R
@ min. footprint
@ 6 cm2 cooling area
3)
Linear derating factor
thJC
thJC_FP
thJ
thJA_FP
thJA
- - 1.5 K/W
- - 3.9
- - 62
- - 80
-
-
-
-
35
-
62
-
0.66
Linear derating factor, FullPAK - - 0.25
Soldering temperature,
T
sold
- - 260 °C
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=0.25mA
V
(BR)DSS
600 - - V
W/K
Drain-source avalanche breakdown voltage
VGS=0V, ID=7.3A
Gate threshold voltage, VGS = V
I
= 350 µ A
D
DS
Zero gate voltage drain current
VDS = 600 V, VGS = 0 V, Tj = 25 °C
V
= 600 V, V GS = 0 V, T j = 150 °C
DS
Gate-source leakage current
VGS=30V, VDS=0V
Drain-source on-state resistance
VGS=10V, ID=4.6A, Tj=25°C
V
=10V, I D=4.6A, T j=150°C
GS
Gate input resistance
f = 1 MHz, open drain
Page 2
V
(BR)DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
- 700 -
2.1 3 3.9
-
-
0.5
-
1
100
- - 100 nA
-
-
0.54
1.57
0.6
1.74
- 0.8 -
2002-06-24
µA
Ω
Page 3
Preliminary data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
o(er)
o(tr)
d(on
r
d(off
s
d
g
VDS≥2*I D*R
I
=4.6A
D
VGS=0V, VDS=25V,
f=1MHz
DS(on)max
,
- 6 - S
- 790 - pF
- 260 -
- 16 -
VGS=0V,
V
=0V to 480V
DS
- 30 -
- 55 -
VDD=380V, VGS=0/13V,
I
=7.3A,
D
R
=12Ω , T j=125°C
G
- 6 - ns
- 3.5 -
- 60 100
- 7 15
VDD=480V, ID=7.3A - 3 - nC
- 9.2 -
VDD=480V, ID=7.3A,
V
=0 to 10V
GS
- 21 27
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
C
is a fixed capacitance that gives the same charging time as C
o(tr)
plateau
VDD=480V, ID=7.3A - 5.5 - V
*f .
2002-06-24
Page 3
AV=E AR
while V DS is rising from 0 to 80% V
oss
while V DS is rising from 0 to 80% V
oss
DSS
DSS
.
.
Page 4
Preliminary data
Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Inverse diode continuous
I
S
TC=25°C - - 7.3 A
forward current
Inverse diode direct current,
I
SM
- - 21.9
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
VGS=0V, IF=IS - 1 1.2 V
VR=480V, IF=IS ,
di
/dt =100A/µs
F
- 400 600 ns
- 4 - µC
- 28 - A
Tj=25°C - 800 - A/µs
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
SPP_B_I SPP_B_I
SPA SPA
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.024 0.024 K/W C
0.052 0.047 C
0.085 0.065 C
0.183 0.177 C
0.199 0.457 C
0.073 2.516 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0001354 0.00012 Ws/K
0.0004561 0.000455
0.0007717 0.000638
0.0017 0.00114
0.00778 0.00737
0.07 0.412
External Heatsink
T
case
amb
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2002-06-24
Page 5
Preliminary data
1 Power dissipation
P
= f (T C)
tot
SPP07N60C3
100
W
80
70
tot
P
60
50
40
30
20
10
0
0 20 40 60 80 100 120
°C
2 Power dissiaption FullPAK
P
= f (T C)
tot
35
W
25
tot
P
20
15
10
5
160
T
C
0
0 20 40 60 80 100 120
°C
T
150
C
3 Safe operating area FullPAK
ID = f (VDS)
parameter: D = 0, T C = 25°C
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
0
tp = 0.01 ms
tp = 0.1 ms
tp = 1 ms
tp = 10 ms
DC
1
10
10
10
10
-1
-2
10
4 Transient thermal impedance FullPAK
Z
= f (t p)
thJC
parameter: D = t p/t
1
10
K/W
0
10
thJC
Z
-1
10
D = 0.5
D = 0.2
D = 0.1
-3
D = 0.05
D = 0.02
D = 0.01
single pulse
-2
10
10
-1
t
1
10
s
p
-2
10
-3
2
V
V
DS
10
3
10
10
-7
-6
-5
10
10
10
-4
10
Page 5
2002-06-24
Page 6
Preliminary data
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: t p = 10 µs, V
24
A
16
D
I
12
8
4
0
0 5 10 15
GS
20V
10V
8V
V
DS
V
7V
6,5V
6V
5,5V
5V
4,5V
25
6 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: t p = 10 µs, V
13
A
11
10
9
D
8
I
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20 22 V25
20V
8V
6.5V
GS
5.5V
5V
4.5V
4V
V
6V
DS
7 Typ. drain-source on resistance
R
DS(on)
parameter: T j=150°C, V
R
=f (I D)
GS
10
Ω
DS(on)
4V
8
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12
4.5V
5V
5.5V
6V
6.5V
8V
20V
A
I
D
15
8 Drain-source on-state resistance
R
DS(on)
= f (T j)
parameter : I D = 4.6 A, V GS = 10 V
SPP07N60C3
3.4
Ω
2.8
2.4
DS(on)
R
2
1.6
1.2
0.8
0.4
0
-60 -20 20 60 100
98%
typ
°C
180
T
j
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2002-06-24
Page 7
Preliminary data
9 Typ. transfer characteristics
ID= f ( V GS ); V DS≥ 2 x I D x R
DS(on)max
parameter: t p = 10 µs
24
A
20
18
16
D
I
14
12
10
8
6
4
2
0
0 2 4 6 8 10 12 14 16
25°C
150°C
V
V
GS
20
10 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: I D = 7.3 A pulsed
SPP07N60C3
16
V
12
V
0,2
GS
10
V
8
6
4
2
0
0 4 8 12 16 20 24 28
DS max
0,8 V
DS max
nC
Q
34
Gate
11 Forward characteristics of body diode
IF = f (VSD)
parameter: T j , tp = 10 µs
2
SPP07N60C3
10
A
1
10
F
I
0
10
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
3
V
V
SD
12 Typ. switching time
t = f (ID), inductive load, T j=125°C
par.: V DS=380V, V GS=0/+13V, R G=12Ω
90
ns
td(off)
70
60
t
50
40
30
20
10
0
0 1 2 3 4 5 6
tf
td(on)
tr
A
I
D
8
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2002-06-24
Page 8
Preliminary data
13 Typ. switching time
t = f (RG), inductive load, T j=125°C
par.: V DS=380V, V GS=0/+13V, I D=7.3 A
500
ns
400
350
300
t
250
200
150
100
50
0
0 20 40 60 80 100
td(off)
td(on)
tf
tr
Ω
R
14 Typ. drain current slope
di /dt = f(R G), inductive load, T j = 125°C
par.: V DS=380V, V GS=0/+13V, I D=7.3A
3000
A/µs
2000
di /dt
1500
di/dt(on)
1000
500
130
G
di/dt(off)
0
0 20 40 60 80 100
Ω
R
130
G
15 Typ. drain source voltage slope
dv /dt = f(R G), inductive load, T j = 125°C
par.: V DS=380V, V GS=0/+13V, I D=7.3A
100
V/ns
80
70
60
dv /dt
50
40
30
20
10
dv/dt(off)
0
0 20 40 60 80
dv/dt(on)
Ω
R
16 Typ. switching losses
E = f (ID), inductive load, T j=125°C
par.: V DS=380V, V GS=0/+13V, R G=12Ω
0.025
*) E
includes SDP06S60
on
diode commutation losses.
mWs
0.015
E
0.01
0.005
120
G
0
0 1 2 3 4 5 6
Eoff
Eon*
A
8
I
D
Page 8
2002-06-24
Page 9
Preliminary data
17 Typ. switching losses
E = f (RG), inductive load, T j=125°C
par.: V DS=380V, V GS=0/+13V, I D=7.3A
0.2
*) Eon includes SDP06S60
mWs
E
diode commutation losses.
0.16
0.14
0.12
0.1
Eoff
0.08
0.06
0.04
0.02
0
0 20 40 60 80 100
Eon*
Ω
R
18 Avalanche SOA
IAR = f (tAR)
par.: T j ≤ 150 °C
8
A
6
5
AR
I
(START)
T
=25°C
j
4
3
2
1
0
130
10
-3
10
G
(START)
T
=125°C
j
-2
-1
10
10 0 10 1 10
2
µs
t
AR
10
4
19 Avalanche energy
EAS = f (Tj)
par.: I D = 5.5 A, V DD = 50 V
260
mJ
220
200
180
AS
160
E
140
120
100
80
60
40
20
0
20 40 60 80 100 120
°C
20 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
T
j
= f (T j)
SPP07N60C3
720
V
680
660
640
620
600
580
560
540
-60 -20 20 60 100
°C
180
T
j
Page 9
2002-06-24
Page 10
Preliminary data
21 Avalanche power losses
PAR = f (f )
parameter: E AR=0.5mJ
200
W
150
AR
125
P
100
75
50
25
0
10
4
10
5
Hz
22 Typ. capacitances
C = f (VDS)
parameter: V GS=0V, f =1 MHz
4
10
pF
C
3
10
C
2
10
1
10
10
6
10
C
rss
0
0 100 200 300 400
f
iss
C
oss
V
600
DS
V
23 Typ. C
E
=f (V DS)
oss
5.5
µJ
4.5
4
oss
3.5
E
3
2.5
2
1.5
1
0.5
0
0 100 200 300 400
stored energy
oss
V
V
600
DS
Page 10
2002-06-24
Page 11
Preliminary data
Definition of diodes switching characteristics
Page 11
2002-06-24
Page 12
Preliminary data
P-TO220-3-1
P-T O 220-3- 1
symbol
min max min max
A 9.70 10.30 0.3819 0.4055
B 14.88 15.95 0.5858 0.6280
C 0.65 0.86 0.0256 0.0339
D 3.55 3.89 0.1398 0.1531
E 2.60 3.00 0.1024 0.1181
F 6.00 6.80 0.2362 0.2677
G 13.00 14.00 0.5118 0.5512
H 4.35 4.75 0.1713 0.1870
K 0.38 0.65 0.0150 0.0256
L 0.95 1.32 0.0374 0.0520
M
N 4.30 4.50 0.1693 0.1772
P 1.17 1.40 0.0461 0.0551
T 2.30 2.72 0.0906 0.1071
dimensions
[mm] [inch]
.0 . 1 t
2.54 t
TO-263 (D²Pak/P-TO220SMD)
dimensions
symbol
A 9.80 10.20 0.3858 0.4016
B 0.70 1.30 0.0276 0.0512
C 1.00 1.60 0.0394 0.0630
D 1.03 1.07 0.0406 0.0421
E
F 0.65 0.85 0.0256 0.0335
G
H 4.30 4.50 0.1693 0.1772
K 1.17 1.37 0.0461 0.0539
L 9.05 9.45 0.3563 0.3720
M 2.30 2.50 0.0906 0.0984
N
P 0.00 0.20 0.0000 0.0079
Q 4.20 5.20 0.1654 0.2047
R
S 2.40 3.00 0.0945 0.1181
T 0.40 0.60 0.0157 0.0236
U
V
W
X
Y
Z
[mm] [inch]
m i nm a xm i nm a x
2.54 t
5.08 t
15 t
8° max
10.80
1.15
6.23
4.60
9.40
16.15
p.
p.
p.
0.1 t
0.2 t
0.5906 t
8° max
0.4252
0.0453
0.2453
0.1811
0.3701
0.6358
.
p.
p.
p.
Page 12
2002-06-24
Page 13
10.5
Preliminary data
±0.005
4.7
±0.005
±0.005
1.5
6.1
±0.001
±0.002
2.7
7˚
±0.005
15.99
±0.005
14.1
±0.005
12.79
123
±0.005
±0.005
9.68
±0.005
3.3
13.6
1.28
+0.003
-0.002
0.7
+0.003
-0.002
2.57
±0.002
0.5
+0.005
-0.002
2.54
GPT09301
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 13
2002-06-24
Page 14
Preliminary data
P-TO262-3-1
Page 14
2002-06-24
Page 15
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 15
2002-06-24