Panasonic SPP07N60C3, SPB07N60C3, SPI07N60C3, SPA07N60C3 User Manual

Cool MOS™ Power Transistor

)

j

A

j

A

t

j

g

Preliminary data

SPP07N60C3, SPB07N60C3

SPI07N60C3, SPA07N60C3

Feature

• New revolutionary high voltage technology

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• High peak current capability

P-TO262-3-1 P-TO220-3-1P-TO220-3-31 P-TO263-3-2

• Improved transconductance

• 150 °C operating temperature

P-TO220-3-31

3

2

1

Type Package Ordering Code

SPP07N60C3 P-TO220-3-1 Q67040-S4422 SPB07N60C3 P-TO263-3-2 Q67040-S4394 SPI07N60C3 P-TO262-3-1 Q67040-S4424 SPA07N60C3 P-TO220-3-31

Q67040-S4409

Maximum Ratings

Product Summary

VDS @ T R

I

D

Marking

07N60C3 07N60C3 07N60C3 07N60C3

DS(on

jmax

650 V

0.6 Ω

7.3 A

Parameter Symbol Value Unit

SPA

7.3

4.6

A

1)

Continuous drain current

TC = 25 °C T

= 100 °C

C

Pulsed drain current, tp limited by T

max

Avalanche energy, single pulse

ID=5.5A, VDD=50V

Avalanche energy, repetitive tAR limited by T

I

=7.3A, VDD=50V

D

Avalanche current, repetitive t

limited by T

R

Reverse diode dv/dt

IS = 7.3 A, V

< VDD, di/dt=100A/µs, T

DS

jmax

=150°C

jmax

max

2)

I

I E

E

I

dv/dt 6 6 V/ns

Gate source voltage static V Gate source voltage AC (f >1Hz) V Power dissipation, T

= 25°C P

C

D

D puls

AS

AR

R

GS GS to

SPP_B_I

7.3

4.6

21.9 21.9 A 230 230 mJ

0.5 0.5

7.3 7.3 A

±20 ±20 V ±30 ±30

83 32 W

Operating and storage temperature T

Page 1

T

,

st

-55...+150 °C 2002-06-24

Preliminary data

A

Thermal Characteristics Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - case R Thremal resistance, junction - case, FullPAK R Thermal resistance, junction - ambient, leaded R Thermal resistance, junction - ambient, FullPAK R SMD version, device on PCB:

R

@ min. footprint @ 6 cm2 cooling area

3)

Linear derating factor

thJC thJC_FP thJ thJA_FP thJA

- - 1.5 K/W

- - 3.9

- - 62

- - 80

-

35

-

62

-

0.66 Linear derating factor, FullPAK - - 0.25 Soldering temperature,

T

sold

- - 260 °C

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=0.25mA

V

(BR)DSS

600 - - V

W/K

Drain-source avalanche breakdown voltage

VGS=0V, ID=7.3A

Gate threshold voltage, VGS = V

I

= 350 µA

D

DS

Zero gate voltage drain current

VDS = 600 V, VGS = 0 V, Tj = 25 °C V

= 600 V, VGS = 0 V, Tj = 150 °C

DS

Gate-source leakage current

VGS=30V, VDS=0V

Drain-source on-state resistance

VGS=10V, ID=4.6A, Tj=25°C V

=10V, ID=4.6A, Tj=150°C

GS

Gate input resistance f = 1 MHz, open drain

Page 2

V

(BR)DS

V

GS(th)

I

DSS

I

GSS

R

DS(on)

R

G

- 700 -

2.1 3 3.9

-

0.5

-

1

100

- - 100 nA

-

0.54

1.57

0.6

1.74

- 0.8 -

2002-06-24

µA

Ω

Preliminary data

)

f

g

(

)

Electrical Characteristics Parameter Symbol Conditions Values Unit

min. typ. max.

Characteristics

Transconductance g

Input capacitance C Output capacitance C Reverse transfer capacitance C Effective output capacitance,

4)

C

energy related Effective output capacitance,

5)

C

time related Turn-on delay time t Rise time t Turn-off delay time t Fall time t

Gate Charge Characteristics

Gate to source charge Q Gate to drain charge Q Gate charge total Q

fs

iss oss rss o(er)

o(tr)

d(on r d(off

s d

g

VDS≥2*ID*R I

=4.6A

D

VGS=0V, VDS=25V, f=1MHz

DS(on)max

,

- 6 - S

- 790 - pF

- 260 -

- 16 -

VGS=0V, V

=0V to 480V

DS

- 30 -

- 55 -

VDD=380V, VGS=0/13V, I

=7.3A,

D

R

=12Ω, Tj=125°C

G

- 6 - ns

- 3.5 -

- 60 100

- 7 15

VDD=480V, ID=7.3A - 3 - nC

- 9.2 -

VDD=480V, ID=7.3A, V

=0 to 10V

GS

- 21 27

Gate plateau voltage V

1

Limited only by maximum temperature

2

Repetitve avalanche causes additional power losses that can be calculated as P

3

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 4

C

is a fixed capacitance that gives the same stored energy as C

o(er)

5

C

is a fixed capacitance that gives the same charging time as C

o(tr)

plateau

VDD=480V, ID=7.3A - 5.5 - V

*f.

2002-06-24

Page 3

AV=EAR

while VDS is rising from 0 to 80% V

oss

while VDS is rising from 0 to 80% V

oss

DSS

.

Preliminary data

Electrical Characteristics Parameter Symbol Conditions Values Unit

min. typ. max.

Characteristics

Inverse diode continuous

I

S

TC=25°C - - 7.3 A

forward current Inverse diode direct current,

I

SM

- - 21.9 pulsed Inverse diode forward voltage V Reverse recovery time t Reverse recovery charge Q Peak reverse recovery current I Peak rate of fall of reverse

dirr/dt

SD

rr

rrm

VGS=0V, IF=IS - 1 1.2 V VR=480V, IF=IS ,

di

/dt=100A/µs

F

- 400 600 ns

- 4 - µC

- 28 - A

Tj=25°C - 800 - A/µs

recovery current

Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value Unit

SPP_B_I SPP_B_I

SPA SPA

R R R R R R

th1 th2 th3 th4

th5

th6

0.024 0.024 K/W C

0.052 0.047 C

0.085 0.065 C

0.183 0.177 C

0.199 0.457 C

0.073 2.516 C

T

R

j T

th1

P

(t)

tot

C

th1

C

th2

R

C

th,n

th1 th2 th3 th4 th5 th6

0.0001354 0.00012 Ws/K

0.0004561 0.000455

0.0007717 0.000638

0.0017 0.00114

0.00778 0.00737

0.07 0.412

External Heatsink

T

case

amb

Page 4

2002-06-24

Preliminary data

1 Power dissipation

P

= f (TC)

tot

SPP07N60C3

100

W

80

70

tot

P

60

50

40

30

20

10

0

0 20 40 60 80 100 120

°C

2 Power dissiaption FullPAK

P

= f (TC)

tot

35

W

25

tot

P

20

15

10

5

160

T

C

0

0 20 40 60 80 100 120

°C

T

150

C

3 Safe operating area FullPAK

ID = f (VDS)

parameter: D = 0, TC = 25°C

2

10

A

1

10

D

I

0

10

tp = 0.001 ms

0

tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC

1

10

-1

-2

10

4 Transient thermal impedance FullPAK

Z

= f (tp)

thJC

parameter: D = tp/t

1

10

K/W

0

10

thJC

Z

-1

10

D = 0.5 D = 0.2 D = 0.1

-3

D = 0.05 D = 0.02 D = 0.01 single pulse

-2

10

-1

t

1

10

s

p

-2

10

-3

2

V

DS

10

3

10

-7

-6

-5

10

-4

10

Page 5

2002-06-24

Preliminary data

5 Typ. output characteristic

ID = f (VDS); Tj=25°C

parameter: tp = 10 µs, V

24

A

16

D

I

12

8

4

0

0 5 10 15

GS

20V 10V 8V

V

DS

V

7V

6,5V

6V

5,5V

5V

4,5V

25

6 Typ. output characteristic

ID = f (VDS); Tj=150°C

parameter: tp = 10 µs, V

13

A

11 10

9

D

8

I

7 6 5 4 3 2 1 0

0 2 4 6 8 10 12 14 16 18 20 22 V25

20V 8V

6.5V

GS

5.5V

5V

4.5V

4V

V

6V

DS

7 Typ. drain-source on resistance

R

DS(on)

parameter: Tj=150°C, V

R

=f(ID)

GS

10

Ω

DS(on)

4V

8

7

6

5

4

3

2

1

0

0 2 4 6 8 10 12

4.5V

5V

5.5V

6V

6.5V 8V 20V

A

I

D

15

8 Drain-source on-state resistance

R

DS(on)

= f (Tj)

parameter : ID = 4.6 A, VGS = 10 V

SPP07N60C3

3.4

Ω

2.8

2.4

DS(on)

R

2

1.6

1.2

0.8

0.4

0

-60 -20 20 60 100

98%

typ

°C

180

T

j

Page 6

2002-06-24

Preliminary data

9 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x R

DS(on)max

parameter: tp = 10 µs

24

A

20 18 16

D

I

14 12 10

8 6 4 2 0

0 2 4 6 8 10 12 14 16

25°C

150°C

V V

GS

20

10 Typ. gate charge

V

GS

= f (Q

Gate

)

parameter: ID = 7.3 A pulsed

SPP07N60C3

16

V

12

V

0,2

GS

10

V

8

6

4

2

0

0 4 8 12 16 20 24 28

DS max

0,8 V

DS max

nC

Q

34

Gate

11 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

2

SPP07N60C3

10

A

1

10

F

I

0

10

Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%)

-1

10

0 0.4 0.8 1.2 1.6 2 2.4

3

V

SD

12 Typ. switching time

t = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=12Ω

90

ns

td(off)

70

60

t

50

40

30

20

10

0

0 1 2 3 4 5 6

tf td(on) tr

A

I

D

8

Page 7

2002-06-24

Preliminary data

13 Typ. switching time

t = f (RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=7.3 A

500

ns

400

350

300

t

250

200

150

100

50

0

0 20 40 60 80 100

td(off)

td(on) tf tr

Ω

R

14 Typ. drain current slope

di/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A

3000

A/µs

2000

di/dt

1500

di/dt(on)

1000

500

130

G

di/dt(off)

0

0 20 40 60 80 100

Ω

R

130

G

15 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A

100

V/ns

80

70

60

dv/dt

50

40

30

20

10

dv/dt(off)

0

0 20 40 60 80

dv/dt(on)

Ω

R

16 Typ. switching losses

E = f (ID), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, RG=12Ω

0.025

*) E

includes SDP06S60

on

diode commutation losses.

mWs

0.015

E

0.01

0.005

120

G

0

0 1 2 3 4 5 6

Eoff

Eon*

A

8

I

D

Page 8

2002-06-24

Preliminary data

17 Typ. switching losses

E = f(RG), inductive load, Tj=125°C par.: VDS=380V, VGS=0/+13V, ID=7.3A

0.2

*) Eon includes SDP06S60

mWs

E

diode commutation losses.

0.16

0.14

0.12

0.1

Eoff

0.08

0.06

0.04

0.02

0

0 20 40 60 80 100

Eon*

Ω

R

18 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

8

A

6

5

AR

I

(START)

T

=25°C

j

4

3

2

1

0

130

10

-3

10

G

(START)

T

=125°C

j

-2

-1

10

10 0 10 1 10

2

µs

t

AR

10

4

19 Avalanche energy

EAS = f (Tj)

par.: ID = 5.5 A, VDD = 50 V

260

mJ

220 200 180

AS

160

E

140 120 100

80 60 40 20

0

20 40 60 80 100 120

°C

20 Drain-source breakdown voltage

V

(BR)DSS

V

160

T

j

= f (Tj)

SPP07N60C3

720

V

680

660

640

620

600

580

560

540

-60 -20 20 60 100

°C

180

T

j

Page 9

2002-06-24

Preliminary data

21 Avalanche power losses

PAR = f (f )

parameter: EAR=0.5mJ

200

W

150

AR

125

P

100

75

50

25

0

10

4

10

5

Hz

22 Typ. capacitances

C = f (VDS) parameter: VGS=0V, f=1 MHz

4

10

pF

C

3

10

C

2

10

1

10

6

10

C

rss

0

0 100 200 300 400

f

iss

C

oss

V

600

DS

V

23 Typ. C E

=f(VDS)

oss

5.5

µJ

4.5

4

oss

3.5

E

3

2.5

2

1.5

1

0.5

0

0 100 200 300 400

stored energy

oss

V

600

DS

Page 10

2002-06-24

Preliminary data

Definition of diodes switching characteristics

Page 11

2002-06-24

Preliminary data

yp

y

P-TO220-3-1

symbol

min max min max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181

F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256

L 0.95 1.32 0.0374 0.0520 M N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551

T 2.30 2.72 0.0906 0.1071

dimensions

[mm] [inch]

.0.1 t

2.54 t

TO-263 (D²Pak/P-TO220SMD)

dimensions

symbol

A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 E

F 0.65 0.85 0.0256 0.0335 G H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539

L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U V

W

X Y Z

[mm] [inch]

minmaxminmax

2.54 t

5.08 t

15 t

8° max

10.80

1.15

6.23

4.60

9.40

16.15

p.

0.1 t

0.2 t

0.5906 t

8° max

0.4252

0.0453

0.2453

0.1811

0.3701

0.6358

.

p.

Page 12

2002-06-24

10.5

Preliminary data

±0.005

4.7

±0.005

1.5

6.1

±0.001

±0.002

2.7

7˚

±0.005

15.99

±0.005

14.1

±0.005

12.79

123

±0.005

9.68

±0.005

3.3

13.6

1.28

+0.003

-0.002

0.7

+0.003

-0.002

2.57

±0.002

0.5

+0.005

-0.002

2.54

GPT09301

Please refer to mounting instructions (application note AN-TO220-3-31-01)

Page 13

2002-06-24

Preliminary data

P-TO262-3-1

Page 14

2002-06-24

Preliminary data

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Page 15

2002-06-24