Panasonic LN77L, SHC00023CED User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Infrared Light Emitting Diodes

LN77L

GaAIAs Infrared Light Emitting Diode

For optical control systems

 Features

 High-power output, high-efficiency: PO = 18 mW (typ.)
 Fast response and high-speed modulation capability: fC = 20 MHz (typ.)
 Wide directivity: θ = 20° (typ.)
 Transparent epoxy resin package

Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Power dissipation P

Forward current I

Pulse forward current

*

Reverse voltage V

Operating ambient temperature T

Storage temperature T

Note) *: f = 100 Hz, Duty cycle = 0.1%

D

F

I

FP

R

opr

stg

190 mW

100 mA

1 A

3 V

–25 to +85

–30 to +100

°C

°C

Electro-Optical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Radiant power P

Reverse current I

Forward voltage V

Peak emission wavelength

Spectral half band width

Half-power angle

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Modulation total power output 3 dB frequency to fall from 1 MHz.

Cutoff frequency: 20 MHz

fC : 10 × log

3. LED might radiate red light under large current drive.

4. *: A light detection element uses a silicon diode have proofread a load with a standard device.

PO at f = f

PO at f = 1 MHz

C

= –3

IF = 50 mA 10 18 mW

O

VR = 3 V 10 µA

R

IF = 100 mA 1.6 1.9 V

F

IF = 50 mA 860 nm

λ

P

IF = 50 mA 40 nm

Δλ

The angle when the radiant power is halved. 20

θ

°

Publication date: October 2008

SHC00023CED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

Ambient temperature Ta (°C)

Forward current I

F

(mA)

120

100

80

60

40

20

0

0 20 40 60 80 100

−25

10

2

10

1

Pulse forward current IFP (mA)

Relative radiant power ∆P

O

10

3

10

2

10

−2

10

−1

1 10

(1) tW = 10 µs
f = 100 Hz
(2) DC
Ta = 25°C

2.2

1.8

1.4

1.0

0.6

Ambient temperature Ta (°C)

Forward voltage V

F

(V)

−40 0 40 80 120

IF = 100 mA

50 mA

Duty cycle (%)

Pulse forward current I

FP

(A)

tW = 10 µs
Ta = 25°C

10

2

10

1

10

−1

10 10

2

1

10

−2

10

−1

10

4

10

3

10

2

1

10

Forward voltage VF (V)

Pulse forward current I

FP

(mA)

1 3 52 4

10

−1

0

tW = 10 µs
f = 100 Hz
Ta = 25°C

(1)

(2)

10

1

Ambient temperature Ta (°C)

IF = 50 mA

Relative radiant power ∆P

O

−40 0 40 80

10

−1

920

900

880

860

840

820

Ambient temperature Ta (°C)

IF = 50 mA

Peak emission wavelength λ

P

(nm)

−40 0 40 80 120

100

60

80

40

20

Wavelength λ (nm)

Relative radiant intensity (%)

800 850 900 950 1 000 1 050

0

750

IF = 50 mA
Ta = 25°C

20

90

100

80

70

60

50

40

30

Relative radiant intensity (%)

0° 10° 20°

30°

40°

50°

60°

70°

80°

90°

IF  T

a

IFP  Duty cycle

IFP  V

F

∆

PO  I

FP

VF  T

a

∆

PO  T

a

λP  T

a

Relative radiant intensity

 λ Directive characteristics

LN77L

2

SHC00023CED