Panasonic MIP301 Datasheet

Intelligent Power Devices (IPDs)

MIP301

Silicon MOS IC

■ Features

●100V high breakdown voltage MOS FET and CMOS control cir-

cuits are integrated into one chip

●5V and 3 - 5W output with 24VDC input (Flyback method)

■ Applications

●IPD for DC/DC converter

■ Absolute Maximum Ratings (Ta = 25 ± 3°C)

Parameter

Drain voltage
Control voltage
Input voltage
Output current
Control current
Channel temperature
Storage temperature

Symbol

V

D

V

C

V

IN

I

D

I

C

T

ch

T

stg

Ratings

90

8

30

1.1

0.1

150

−55 to +150

Unit

V
V
V
A

A
°C
°C

0.6±0.3

1.27

0.1±0.1

0.3

0.4±0.25
1

2

3

4

4.2±0.3

6.5±0.3

unit: mm

8

7

6

5

1.5±0.2

0.65

0.2±0.1

1: VIN 5: Drain
2: Source 6: Source
3: Source 7: Source
4: Control 8: Source

SO-8P Type Package

5.0±0.3

■ Block Diagram

Control pin Shutdown/Auto-restart

Shunt
regulator

PWM control
current

Max Duty

Sawtooth

­+

Thermal shutdown

Clock

Low pass filter

5.7V

4.7V

circuit

­+

+

-

Restarting
trigger circuit

Auto-restart

0

1

Power supply
for internal
circuit

S
R

S
R

Auto-restart current-source

D

T

Q

R

Q

Q

Q

Q

Q

Leading edge

blanking

Drain pin

R

X I

on

Power
MOS FET

Minimum ON-time

delay circuit

Source pin

V

IN

-

D

+

-

+

1

Intelligent Power Devices (IPDs)

MIP301

■ Electrical Characteristics (T

Parameter

Output frequency
Maximum duty cycle

Control functions

Auto-restart

Circuit protection

Output

Power supply voltage

Minimum duty cycle
PWM gain
Circuit current
Dynamic impedance

Control pin charging current

Auto-restart threshold voltage
Lockout threshold voltage
Auto-restart hysteresis voltage
Self-protection current limit
Leading edge blanking delay
Current limit delay
Thermal shutdown temperature
Power-up reset threshold voltage
ON-state resistance
OFF-state current
Breakdown voltage
Rise time
Fall time
Start threshold voltage
Stop threshold voltage
Input hysteresis voltage
Shunt regulator voltage
Control supply/discharge current

= 25 ± 2°C)

C

Symbol

f

OSC

MAXDC
MINDC
GPWM
Is
ZC

I

C

V

C(on)

V

C(off)

∆V

C

I

LIMIT

t

on(BLK)

t

d(OCL)

T

OTP

V

C reset

R

DS(on)

I

DSS

V

DSS

t

r

t

f

V

IN(START)

V

IN(STOP)

∆V

IN

V

C

I

CD

Conditions

IC = 2mA
IC = 2mA
IC = 10mA

IC = 3mA
VC = 0
VC = 5V

IC = 3mA
IC = 3mA
IC = 3mA

ID = 1A
VDS = 82V Output MOS FET disabled
ID = 0.25mA Output MOS FET disabled

IC = 3mA
Output MOS FET disabled

min

180

77

0

−21

0.8
10

−2.4

−2

5
4

0.5

0.9

130

2.3

92

16
10

5.5

5.4

0.5

typ

200

80

3

−16

2.5
15

−1.9

−1.5

5.7

4.7

1
1

0.25

0.1

140

3.3

1.8

0.01

0.1

0.1

5.7

0.8

max

220

83

5

−11

4

25

−1.2

− 0.8

6.3

5.3

1.5

1.1

150

4.2

2.2

0.25

0.2

0.2

18.2

12.2

7.5

6.1

1.1

Unit

kHz

%
%

%/mA

mA

Ω

mA
mA

V
V
V
A

µs
µs

°C

V

Ω

mA

V

µs
µs

V
V
V
V

mA

2