Panasonic MA21D382G User Manual
This product complies with the RoHS Directive (EU 2002/95/EC).
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
Rs = 50 Ω
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
tp = 2 µs
tr = 0.35 ns
δ = 0.05
IF = IR = 100 mA
RL = 100 Ω
10%
Irr = 10 mA
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse Output Pulse
Schottky Barrier Diodes (SBD)
MA21D382G
Silicon epitaxial planar type
For high frequency rectification
Features
I
= 1.5 A rectification is possible
F(AV)
Low forward voltage V
Large non-repetitive peak forward surge current I
F
FSM
Package
Code
SMini2-F2
Pin Name
1: Anode
Absolute Maximum Ratings Ta = 25°C
2: Cathode
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current (Average) I
Non-repetitive peak forward surge
*
current
Junction temperature T
Storage time T
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
RM
F(AV)
I
FSM
stg
R
j
30 V
30 V
1.5 A
30 A
150
–55 to +150
°C
°C
Marking Symbol: 4U
Electrical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
V
V
Reverse current I
Terminal capacitance C
Reverse recovery time
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
*
t
rr
= 0.5 A 0.34 0.38 V
F1IF
= 1.0 A 0.38 0.42
F2IF
= 1.5 A 0.42 0.46
F3IF
VR = 30 V 100
R
VR = 10 V, f = 1 MHz 40 pF
t
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 W
13 ns
mA
Publication date: January 2008 SKH00223AED 1
This product complies with the RoHS Directive (EU 2002/95/EC).
10
−2
0 0.4 0.8 1.2
10
−1
1
10
10
4
10
3
10
2
MA21D382_ IF-V
F
Forward current I
F
(mA)
Forward voltage VF (V)
Ta = 150°C
100°C
75°C
25°C
-20°C
0 5 10 15 20 25 30
10
−1
1
10
10
2
10
5
10
4
10
3
Reverse voltage VR (V)
Reverse current I
R
(mA)
MA21D382_IR-VR
T
a
= 150°C
125°C
75°C
25°C
−20°C
0
200
400
600
0 10 20 30
MA21D382_Ct-VR
T
a
= 25°C
f = 1 MHz
Reverse voltage VR (V)
Terminal capacitance C
t
(pF)
0
1
2
3
0 10 20 30 40
MA21D382_PR(AV)-VR
I
F
t
p
T
DC
0.9
0.8
0.5
Reverse voltage VR (V)
Reverse power dissipation (Average) P
R(AV)
(W)
0
0.2
0.4
0.6
0 0.4 0.8 1.2 1.6
MA21D382_PF(AV)-IF(AV)
Forward current (Average) I
F(AV)
(A)
Forward power dissipation (Average) P
F(AV)
(W)
I
F
t
p
T
DC
0.5
0.2
0.1
t
p
T
I
F
0
0.4
1.2
0.8
0 40
160120
80
T
j
= 125°C
V
R
= 5 V
Alumina PC board
Cu hoil 2 mm × 2 mm
tp / T
DC
0.5
0.2
0.1
MA21D382_
I
F(AV)-Ta
Ambient temperature Ta
(°C)
Forward current (Average) I
F(AV)
(
A
)
10
−1
10
−3
110
−1
10
−2
10 10210
3
1
10
10
3
10
2
MA21D382_Rth-t
Time t (s)
Thermal resistance R
th
(°C/W)
T
a
= 25°C
Alumina PC board
Cu hoil 2 mm × 2 mm
0
0.4
1.6
1.2
0.8
0 40
200160120
80
T
j
= 125°C
V
R
= 5 V
tp / T
DC
0.5
0.2
0.1
Lead temperature Tl
(°C)
Forward current (Average) I
F(AV)
(
A
)
t
p
T
I
F
MA21D382_I
F(AV)-Tl
MA21D382G
IF VF IR VR Ct V
P
VR P
R(AV)
F(AV)
I
I
F(AV)
F(AV)
T
R
a
Rth t I
2 SKH00223AED
T
F(AV)
1
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