Panasonic MA3S133, MA133 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA3S133 (MA133)
Silicon epitaxial planar type
For switching circuits
■ Features
• Two isolated elements contained in one package, allowing highdensity mounting
• Two diodes are connected in series in the package
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage
V
Forward current Single I
Series 65
Peak forward
current
Single I
Series 130
Junction temperature T
Storage temperature T
R
RM
F
FM
j
stg
80 V
80 V
100 mA
200 mA
150 °C
−55 to +150 °C
Unit: mm
0.28
±0.05
0.12
(0.44)(0.44)
3˚
0.60
3
12
(0.51) (0.51)
(0.80)
1.60
3˚
(0.80)
+0.05
–0.03
0.28
±0.05
0.80
(0.80)
±0.05
±0.05
1.60
1: Anode 1
2: Cathode 2
3: Cathode 1
0 to 0.1
Anode 2
EIAJ: SC-81 SSMini3-F2 Package
Marking Symbol: MP
Internal Connection
3
+0.05
–0.02
+0.05
–0.03
0.88
(0.375)
+0.05
–0.03
(0.15)
1
2
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance Ct
Ct
Reverse recovery time
*
trr
trr
*
*
3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*1: Between pins 2 and 3
2: Between pins 1 and 3
*
3: t
measurement circuit
*
rr
Publication date: February 2005 SKF00027CED
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
1
*
VR = 0 V, f = 1 MHz 5.5 pF
2
*
1
IF = 10 mA, VR = 6 V 150 ns
2
Irr = 0.1 IR , RL = 100 Ω 9
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
3.0
t
t
rr
I
F
I
F
V
R
R
L
I
= 10 mA
= 6 V
= 100 Ω
rr
t
= 0.1 I
Note) The part number in the parenthesis shows conventional part number.
R
1
MA3S133
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Between pins 1 and 3
T
Forward voltage VF (V
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
Between pins 1 and 3
I
F
Ambient temperature Ta (°C
= 150°C
a
100°C
25°C
−20°C
)
= 100 mA
10 mA
3 mA
IF V
3
10
2
10
)
mA
(
F
= 150°C
T
a
10
100°C
25°C
1
−20°C
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
Forward voltage VF (V
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
)
Ambient temperature Ta (°C
F
Between pins 2 and 3
VF T
a
Between pins 2 and 3
= 100 mA
I
F
)
10 mA
3 mA
)
3
10
2
10
)
nA
(
R
10
1
Reverse current I
−1
10
−2
10
0 20 40 60 80 100 120
3
10
2
10
)
nA
(
R
10
1
V
R
Reverse current I
−1
10
−2
10
−40 0 40 80 120 160 200
IR V
R
Between pins 2 and 3
Between pins 1 and 3
= 150°C
T
a
100°C
= 150°C
T
a
100°C
25°C
25°C
Reverse voltage VR (V
IR T
a
Between pins 2 and 3
Between pins 1 and 3
VR = 75 V
= 75 V
35 V
6 V
Ambient temperature Ta (°C
)
35 V
6 V
)
Ct V
6.0
5.0
)
pF
(
t
4.0
3.0
2.0
Terminal capacitance C
1.0
Between pins 1 and 3
0
0 20406080100120
f = 1 MHz
T
a
Between pins 2 and 3
Reverse voltage VR (V
R
= 25°C
)
3
10
)
A
(
2
10
F(surge)
10
1
Forward surge current I
−1
10
2
I
F(surge)
Between pins 2 and 3
Between pins 1 and 3
−1
Pulse width tW (ms
SKF00027CED
t
W
= 25°C
T
a
I
F(surge)
t
W
Non repetitive
10110
)
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