Panasonic MA6X122, MA122 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6X122 (MA122)
Silicon epitaxial planar type
For switching circuit
■ Features
• Four isolated elements contained in one package, allowing highdensity mounting
• Centrosymmetrical wiring, allowing to free from the taping direction
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
1
Forward current
Peak forward current
Non-repetitive peak forward I
surge current
*
1
*
1, 2
*
Junction temperature T
Storage temperature T
Note)*1: Value for single diode
2: t = 1 s
*
I
FSM
I
FM
R
RM
F
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
+0.20
2.90
0.30
10˚
–0.05
±0.1
1.9
(0.95) (0.95)
+0.10
–0.05
654
+0.25
–0.05
+0.2
1.50
132
(0.65)
+0.2
–0.1
+0.3
1.1
2.8
1.1
–0.3
5˚
–0.1
+0.10
0.16
–0.06
1: Cathode 1
2: Cathode 2
3: Anode 3, 4
4: Cathode 3
Unit: mm
5: Cathode 4
0 to 0.1
6: Anode 1, 2
EIAJ: SC-74 Mini6-G2 Package
Marking Symbol: M2A
Internal Connection
654
±0.2
0.4
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004 SKF00052BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 15 pF
t
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
I
= 10 mA
F
V
R
R
L
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
I
F
Note) The part number in the parenthesis shows conventional part number.
1
MA6X122
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
= 150°C
T
a
mA
(
100°C
F
10
25°C
−20°C
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
10
1
a
= 75 V
V
R
)
µA
−1
(
10
R
−2
10
35 V
1 V
IR V
10
= 150°C
T
a
1
)
µA
−1
(
10
R
−2
10
−3
10
100°C
25°C
Reverse current I
−4
10
−5
10
R
)
0 14020 1206040 10080
Reverse voltage VR (V
6
5
)
pF
(
t
4
3
Ct V
R
)
f = 1 MHz
= 25°C
T
a
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
3
10
)
A
(
2
10
F(surge)
10
VF T
a
= 100 mA
I
F
Ambient temperature Ta (°C
I
t
F(surge)
W
= 25°C
T
a
I
F(surge)
t
W
Non repetitive
10 mA
3 mA
)
−3
10
Reverse current I
−4
10
−5
10
−40 0 40 80 120 160 200 240
Ambient temperature Ta (°C
2
Terminal capacitance C
1
0
0 20406080100120
)
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
10110
)
2
SKF00052BED
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