Panasonic MA6X121, MA121 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA6X121 (MA121)
Silicon epitaxial planar type
For switching circuit
■ Features
• Three isolated elements contained in one package, allowing highdensity mounting
• Short reverse recovery time t
• Small terminal capacitance C
rr
t
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
1
Forward current
Peak forward current
Non-repetitive peak forward I
surge current
*
1
*
1, 2
*
Junction temperature T
Storage temperature T
Note)*1: Value for single diode
2: t = 1 s
*
I
FSM
I
FM
R
RM
F
j
stg
80 V
80 V
100 mA
225 mA
500 mA
150 °C
−55 to +150 °C
–0.3
2.8
–0.1
1.1
0.16
5˚
1: Cathode 1
2: Cathode 2
Unit: mm
+0.10
–0.06
10˚
0.30
0.50
2.90
(0.95)
+0.10
–0.05
+0.10
–0.05
1.9
+0.20
–0.05
±0.1
(0.95)
654
+0.2
+0.25
–0.05
1.50
132
(0.65)
+0.2
–0.1
+0.3
1.1
3: Cathode 3
4: Anode 3
0 to 0.1
5: Anode 2
6: Anode 1
EIAJ: SC-74 Mini6-G1 Package
Marking Symbol: M2D
Internal Connection
654
±0.2
0.4
123
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004 SKF00051BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA80V
VR = 75 V 100 nA
VR = 0 V, f = 1 MHz 2 pF
t
IF = 10 mA, VR = 6 V 3 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
t
I
= 10 mA
F
V
R
R
L
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
I
F
Note) The part number in the parenthesis shows conventional part number.
1
MA6X121
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
1
Forward current I
−1
10
−2
10
C
= 150°
T
a
C
100°
C
25°
C
−20°
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
2
10
10
)
µA
(
R
1
−1
10
a
V
= 75 V
R
)
35 V
1 V
IR V
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
0 20 40 60 80 100 120
R
= 150
T
a
Reverse voltage VR (V
Ct V
1.6
)
pF
1.2
(
t
0.8
R
°C
°C
100
C
25°
)
f = 1 MHz
= 25°
T
a
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
Ambient temperature Ta (°
I
3
10
C
)
A
(
F(surge)
2
10
10
F(surge)
a
t
= 100 mA
I
F
10 mA
3 mA
C)
W
°C
= 25
T
a
I
F(surge)
t
W
Non repetitive
Reverse current I
−2
10
−3
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°
0.4
Terminal capacitance C
0
C)
0 20 40 60 80 100 120
Reverse voltage VR (V
)
1
Forward surge current I
−1
10
−1
Pulse width tW (ms
10110
)
2
SKF00051BED
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