Panasonic MA2J116, MA116 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J116 (MA116)
Silicon epitaxial planar type
For general purpose
1.25
±0.1
0.35
±0.1
0.7
Unit: mm
±0.1
■ Features
• Allowing high-density mounting
• Soft recovery characteristic: t
= 100 ns
rr
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
Forward current (Average) I
Peak forward current I
Non-repetitive peak forward I
surge current
*
Junction temperature T
Storage temperature T
Note)*:t = 1 s
RM
F(AV)
FM
FSM
stg
R
j
−55 to +150 °C
100 mA
225 mA
500 mA
150 °C
40 V
40 V
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
Marking Symbol: 1H
1
0 to 0.1
2
0.5
5˚
±0.1
0 to 0.1
5˚
0.16
+0.1
–0.06
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse voltage V
Reverse current I
F
R
R1
I
R2
I
R3
Terminal capacitance C
1
Forward dynamic resistance
Reverse recovery time
*
2
*
r
f
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 10 MHz.
3.*1: YHP 4191A RF IMPEDANCE ANALYZER
2: t
measurement circuit
*
rr
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 100 mA 1.2 V
IR = 100 µA35V
VR = 15 V 5 nA
VR = 40 V 10
VR = 35 V, Ta = 100°C 100 µA
VR = 6 V, f = 1 MHz 1.0 2.0 pF
t
IF = 3 mA, f = 30 MHz 3.6 Ω
IF = 10 mA, VR = 6 V 100 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
t
R
Note) The part number in the parenthesis shows conventional part number.
±0.1
1.7
±0.1
0.4
(0.15)
±0.2
2.5
Publication date: March 2004 SKF00014BED
1
MA2J116
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
mA
(
F
10
Forward current I
−1
10
−2
10
°C
= 150
T
a
°C
100
°C
25
°C
−20
1
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
V
= 30 V
R
a
)
nA
(
10
1
R
−1
10
)
15 V
6 V
IR V
10
1
(nA)
R
−1
10
−2
Reverse current I
10
−3
10
0 102030405060
R
°C
= 150
T
a
°C
100
°C
25
Reverse voltage VR (V)
Ct V
3.2
)
pF
2.4
(
t
1.6
R
f = 1 MHz
= 25°C
T
a
VF T
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
−40 0 40 80 120 160 200
a
I
F
= 100 mA
Ambient temperature Ta (°
10 mA
3 mA
C)
−2
Reverse current I
10
−3
10
−40 0 40 80 120 160 200
Ambient temperature Ta (°
0.8
Terminal capacitance C
0
10 20 30 40
0
C)
Reverse voltage VR (V
)
2
SKF00014BED
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