Panasonic MA2J112, MA112 User Manual
Switching Diodes
This product complies with the RoHS Directive (EU 2002/95/EC).
MA2J112 (MA112)
Silicon epitaxial planar type
For switching circuits
■ Features
• Allowing high-density mounting
• Ensuring the forward current (Average) capacity I
■ Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Reverse voltage V
Maximum peak reverse voltage V
1
Forward current (Average)
*
Peak forward current I
Non-repetitive peak forward I
surge current
2
*
Junction temperature T
Storage temperature T
Note)*1: With a printed-circuit board
2: t = 1 s
*
I
F(AV)
R
RM
FM
FSM
j
stg
40 V
40 V
200 mA
600 mA
1A
150 °C
−55 to +150 °C
F(AV)
= 200 mA
1.25
±0.1
0.35
±0.1
1
0 to 0.1
2
±0.1
0.5
5˚
0 to 0.1
1: Anode
2: Cathode
EIAJ: SC-76 SMini2-F1 Package
5˚
0.16
0.7
+0.1
–0.06
Unit: mm
±0.1
Marking Symbol: 1C
±0.1
1.7
±0.1
0.4
(0.15)
±0.2
2.5
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Symbol Conditions Min Typ Max Unit
Forward voltage V
Reverse current I
F
R1
I
R2
I
R3
Terminal capacitance C
Reverse recovery time
*
t
rr
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3.*: trr measurement circuit
Bias Application Unit (N-50BU)
A
Pulse Generator
(PG-10N)
= 50 Ω
R
s
Publication date: March 2004 SKF00012BED
Wave Form Analyzer
(SAS-8130)
R
= 50 Ω
i
IF = 200 mA 1.1 V
VR = 15 V 50 nA
VR = 35 V 500
VR = 35 V, Ta = 100°C 100 µA
VR = 0 V, f = 1 MHz 4 pF
t
IF = 10 mA, VR = 6 V 10 ns
Irr = 0.1 IR , RL = 100 Ω
Input Pulse Output Pulse
t
t
p
r
10%
90%
V
R
= 2 µs
t
p
= 0.35 ns
t
r
δ = 0.05
t
I
F
I
= 10 mA
F
V
R
R
L
t
rr
I
rr
= 6 V
= 100 Ω
= 0.1 I
Note) The part number in the parenthesis shows conventional part number.
t
R
1
MA2J112
This product complies with the RoHS Directive (EU 2002/95/EC).
IF V
3
10
2
10
)
= 150°C
T
a
mA
(
100°C
F
10
25°C
–20°C
1
Forward current I
−1
10
−2
10
0 0.2 0.4 0.6 0.8 1.0 1.2
F
Forward voltage VF (V
IR T
2
10
10
(µA)
R
1
a
IR V
Ct V
R
R
= 150°C
T
a
100°C
25°C
f = 1 MHz
= 25°C
T
a
1.6
)
1.2
V
(
F
0.8
Forward voltage V
0.4
0
–40 0 40 80 120 160 200
)
3
10
)
A
(
2
10
F(surge)
10
2
10
10
)
µA
(
R
1
−1
10
Reverse current I
−2
10
−3
10
)
= 35 V
V
R
15 V
6 V
0 102030405060
Reverse voltage VR (V
1.6
)
pF
1.2
(
t
0.8
VF T
a
= 200 mA
I
F
10 mA
3 mA
Ambient temperature Ta (°C
I
t
F(surge)
W
= 25°C
T
a
I
F(surge
t
W
Non repetitive
)
)
−1
Reverse current I
10
−2
10
–40 0 40 80 120 160 200
Ambient temperature Ta (°C)
0.4
Terminal capacitance C
0
0 102030405060
Reverse voltage VR (V
1
Forward surge current I
−1
10
)
−1
Pulse width tW (ms)
10110
2
SKF00012BED
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