Panasonic LNA4905L User Manual

This product complies with the RoHS Directive (EU 2002/95/EC).

Infrared Light Emitting Diodes

LNA4905L

GaAlAs Infrared Light Emitting Diode

For optical control systems

 Features

 High-power output, high-efficiency: PO = 15 mW (min.)
 Fast response and high-speed modulation capability: fC = 30 MHz (typ.)
 Transparent epoxy resin package

Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Power dissipation P

Forward current I

Pulse forward current

*

Reverse voltage V

Operating ambient temperature T

Storage temperature T

Note) *: f = 100 Hz, Duty cycle = 0.1%

D

F

I

FP

R

opr

stg

190 mW

100 mA

1 A

3 V

–25 to +85

–30 to +100

°C

°C

Electrical-Optical Characteristics Ta = 25°C±3°C

Parameter Symbol Conditions Min Typ Max Unit

Radiant power P

Reverse current I

Forward voltage V

Peak emission wavelength

Spectral half band width

Half-power angle

Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.

2. Cutoff frequency: 30 MHz

PO at f = f

3. A light detection element uses a silicon diode have proofread a load with a standard device.

4. LED might radiate red light under large current drive.

fC : 10 × log

PO at f = 1 MHz

C

= −3

IF = 50 mA 15 mW

O

VR = 3 V 10 µA

R

IF = 100 mA 1.7 2.1 V

F

IF = 50 mA 880 nm

λ

P

IF = 50 mA 50 nm

Δλ

The angle when the radiant power is halved. 15

θ

°

Publication date: October 2008

SHC00037CED

1

This product complies with the RoHS Directive (EU 2002/95/EC).

LNA4905L

Package (Unit: mm)

LEXLTN2S0001

Pin name

1: Anode

2: Cathode

2

SHC00037CED