
This product complies with the RoHS Directive (EU 2002/95/EC).
Infrared Light Emitting Diodes
LNA4905L
GaAlAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency: PO = 15 mW (min.)
Fast response and high-speed modulation capability: fC = 30 MHz (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings Ta = 25°C
Parameter Symbol Rating Unit
Power dissipation P
Forward current I
Pulse forward current
*
Reverse voltage V
Operating ambient temperature T
Storage temperature T
Note) *: f = 100 Hz, Duty cycle = 0.1%
D
F
I
FP
R
opr
stg
190 mW
100 mA
1 A
3 V
–25 to +85
–30 to +100
°C
°C
Electrical-Optical Characteristics Ta = 25°C±3°C
Parameter Symbol Conditions Min Typ Max Unit
Radiant power P
Reverse current I
Forward voltage V
Peak emission wavelength
Spectral half band width
Half-power angle
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Cutoff frequency: 30 MHz
PO at f = f
3. A light detection element uses a silicon diode have proofread a load with a standard device.
4. LED might radiate red light under large current drive.
fC : 10 × log
PO at f = 1 MHz
C
= −3
IF = 50 mA 15 mW
O
VR = 3 V 10 µA
R
IF = 100 mA 1.7 2.1 V
F
IF = 50 mA 880 nm
λ
P
IF = 50 mA 50 nm
Δλ
The angle when the radiant power is halved. 15
θ
°
Publication date: October 2008
SHC00037CED
1

This product complies with the RoHS Directive (EU 2002/95/EC).
LNA4905L
Package (Unit: mm)
LEXLTN2S0001
Pin name
1: Anode
2: Cathode
2
SHC00037CED

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