Panasonic LNA2802L User Manual

Infrared Light Emitting Diodes

LNA2802L (LN68)

GaAs Infrared Light Emitting Diode

For optical control systems

Features

High-power output, high-efficiency : P	O = 5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :

λ P = 940 nm (typ.)

Good radiant power output linearity with respect to input current

Long lifetime, high reliability

ø3 plastic package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter		Symbol		Ratings	Unit
Power dissipation		P	D	75	mW
Forward current (DC)	I		F	50	mA
Pulse forward current	I		*	1	A
			FP
Reverse voltage (DC)	V		R	3	V
Operating ambient temperature			T opr	–25 to +85	˚C
Storage temperature	T		stg	– 40 to +100	˚C

* f = 100 Hz, Duty cycle = 0.1 %

Unit : mm

	ø3.8	±	0.2
	ø3.0	±	0.2
5.0 ± 0.2	0.6		soldered 2.0 max.
			Not
1.0	± 0.3
	4.5		2-0.8 max.
±

15.0	2-0.5	± 0.1
1.0		0.5 ± 0.1
(1.5)	2.54
1.7
1	2

1: Anode

2: Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter		Symbol		Conditions	min		typ	max	Unit
Radiant power		P	O	IF = 50mA	2.5	5		mW
Peak emission wavelength		λ	P	IF = 50mA		940		nm
Spectral half band width		∆λ		IF = 50mA		50		nm
Forward voltage (DC)	V		F	IF = 50mA		1.3	1.5	V
Reverse current (DC)	I		R	V R = 3V				10	µ A
Capacitance between terminals		C	t	V R = 0V, f = 1MHz		35		pF
Half-power angle		θ		The angle in which radiant intencity is 50%			20		deg.

Note) The part number in the parenthesis shows conventional part number.

1

LNA2802L
				IF — Ta
	60										10	2
(mA)	50
										(A)		10
F	40									FP
I										I
current	30									current		1
forward	20									forward
Allowable										Pulse	10	–1
	10
	0										10	–2	–1
	– 25	0	20	40		60	80	100				10
		Ambient temperature			Ta	(˚C )
			∆	PO — I FP
10	2					(1) t	w = 10		s		1.6
							f = 100Hz
						(2) DC
							Ta = 25˚C

O
∆P	10											(1)				(V)	1.2
																F
Relativeradiant power	1															Forwardvoltage V
				(2)													0.8
	–1																0.4
10
	–2
10																	0
			10 –2	10 –1
	10 –3							1									– 40
			Pulse forward current	I				FP (A)

Infrared Light Emitting Diodes

IFP — Duty cycle																										IF — V			F
														tw = 10			s						80
																													Ta = 25˚C
														Ta = 25˚C
																							70
																						(mA)	60
																							50
																						F
																						I	40
																						current
																							30
																						Forward	20
																							10
																							0
1										10							10					2	0	0.4		0.8			1.2	1.6
				Duty cycle						(%)															Forward voltage V				F	(V)

V F — Ta					∆ PO — Ta
			10	3
								IF = 50mA
		IF = 50mA
			O
			∆ P
		10mA	10	2
		1mA
			radiant power	10
			Relative
				1
0	40	80	120	– 40	0	40	80	120
Ambient temperature	Ta	(˚C )			Ambient temperature	Ta	(˚C )

					λ	P— Ta
	1000
											IF = 50mA
(nm)	980
P
λ
wavelengthemission	960
	940
Peak
	920
	900
	– 40		0				40		80		120
			Ambient temperature				Ta		(˚C )

Relative radiant intensity (%)

Spectral characteristics

100

IF = 50mA

Ta = 25˚C

80

60

40

20

0
860	900	940	980	1020	1060	1100
		Wavelength		λ	(nm)

Directivity characteristics

						0˚			10˚	20˚
	100
				90
			80
							(%)
		70
								intensity
		60
		50
								radiant
		40
								Relative
					30
20

30˚

40˚

50˚

60˚

70˚

80˚

90˚

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