Panasonic LNA2802L User Manual
Infrared Light Emitting Diodes
LNA2802L (LN68)
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λ
= 940 nm (typ.)
P
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
ø3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
75 mW
50 mA
1A
3V
–25 to +85 ˚C
– 40 to +100 ˚C
5.0±0.2
15.0±1.0
(1.5)
4.5±0.3 0.61.0
1.7
ø3.8±0.2
ø3.0±0.2
2.54
1
2-0.8 max.
2-0.5±0.1
2
Unit : mm
Not soldered 2.0 max.
0.5±0.1
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between terminals
C
Half-power angle θ
IF = 50mA 2.5 5 mW
O
IF = 50mA 940 nm
P
IF = 50mA 1.3 1.5 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 35 pF
t
The angle in which radiant intencity is 50%
Note) The part number in the parenthesis shows conventional part number.
20 deg.
1
LNA2802L Infrared Light Emitting Diodes
— Ta
I
60
50
(mA)
F
40
30
20
10
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
— I
∆P
2
10
O
10
1
O
FP
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
(2)
— Duty cycle
I
FP
2
10
10
(A)
FP
1
–1
10
Pulse forward current I
–2
10
–1
10
11010
tw = 10µs
Ta = 25˚C
(mA)
F
Forward current I
2
80
70
60
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6
Duty cycle (%)
— Ta
V
1.6
F
IF = 50mA
10mA
1mA
(1)
(V)
F
1.2
0.8
3
10
O
2
10
— V
I
F
F
Ta = 25˚C
Forward voltage VF (V)
— Ta
∆P
O
IF = 50mA
–1
10
Relative radiant power ∆P
–2
10
–3
10
–2
–1
10
Pulse forward current IFP (A)
— Ta
λ
1000
980
(nm)
P
960
940
920
P
IF = 50mA
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Forward voltage V
0.4
0
110
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
860
= 50mA
I
F
Ta = 25˚C
900 940 980 1020 1060 1100
Wavelength λ (nm)
10
Relative radiant power ∆P
1
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative radiant intensity (%)
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
2
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