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Infrared Light Emitting Diodes
LNA2802L (LN68)
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 5 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :
λ
= 940 nm (typ.)
P
Good radiant power output linearity with respect to input current
Long lifetime, high reliability
ø3 plastic package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
75 mW
50 mA
1A
3V
–25 to +85 ˚C
– 40 to +100 ˚C
5.0±0.2
15.0±1.0
(1.5)
4.5±0.3 0.61.0
1.7
ø3.8±0.2
ø3.0±0.2
2.54
1
2-0.8 max.
2-0.5±0.1
2
Unit : mm
Not soldered 2.0 max.
0.5±0.1
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between terminals
C
Half-power angle θ
IF = 50mA 2.5 5 mW
O
IF = 50mA 940 nm
P
IF = 50mA 1.3 1.5 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 35 pF
t
The angle in which radiant intencity is 50%
Note) The part number in the parenthesis shows conventional part number.
20 deg.
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LNA2802L Infrared Light Emitting Diodes
— Ta
I
60
50
(mA)
F
40
30
20
10
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
— I
∆P
2
10
O
10
1
O
FP
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
(2)
— Duty cycle
I
FP
2
10
10
(A)
FP
1
–1
10
Pulse forward current I
–2
10
–1
10
11010
tw = 10µs
Ta = 25˚C
(mA)
F
Forward current I
2
80
70
60
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6
Duty cycle (%)
— Ta
V
1.6
F
IF = 50mA
10mA
1mA
(1)
(V)
F
1.2
0.8
3
10
O
2
10
— V
I
F
F
Ta = 25˚C
Forward voltage VF (V)
— Ta
∆P
O
IF = 50mA
–1
10
Relative radiant power ∆P
–2
10
–3
10
–2
–1
10
Pulse forward current IFP (A)
— Ta
λ
1000
980
(nm)
P
960
940
920
P
IF = 50mA
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Forward voltage V
0.4
0
110
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
860
= 50mA
I
F
Ta = 25˚C
900 940 980 1020 1060 1100
Wavelength λ (nm)
10
Relative radiant power ∆P
1
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative radiant intensity (%)
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
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Caution for Safety
Gallium arsenide material (GaAs) is used
in this product.
Therefore, do not burn, destroy, cut, crush, or chemically decompose the product, since gallium arsenide
DANGER
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the
products or technologies described in this material and controlled under the "Foreign Exchange and Foreign
Trade Law" is to be exported or taken out of Japan.
(2) The technical information described in this material is limited to showing representative characteristics and
applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting
of relative rights, or the granting of any license.
(3) The products described in this material are intended to be used for standard applications or general electronic
equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion
equipment, life support systems and safety devices) in which exceptional quality and reliability are required,
or if the failure or malfunction of the products may directly jeopardize life or harm the human body.
• Any applications other than the standard applications intended.
(4) The products and product specifications described in this material are subject to change without notice for
reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the
range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for
any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, redundant design is recommended, so that
such equipment may not violate relevant laws or regulations because of the function of our products.
(6) When using products for which dry packing is required, observe the conditions (including shelf life and after-
unpacking standby time) agreed upon when specification sheets are individually exchanged.
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company.
material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when disposing of the products. Do not mix them with ordinary industrial waste or household refuse when disposing of
GaAs-containing products.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconduc-
tor products best suited to their applications.
Due to modification or other reasons, any information contained in this material, such as available product
types, technical data, and so on, is subject to change without notice.
Customers are advised to contact our semiconductor sales office and obtain the latest information before
starting precise technical research and/or purchasing activities.
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the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any
liability for any damages arising from any errors etc. that may appear in this material.
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2001 MAR
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