Panasonic LN66F Datasheet

Infrared Light Emitting Diodes
LN66F
GaAs Infrared Light Emitting Diode
For light source of remote control systems
ø5.0±0.2
Unit : mm
Features
High-power output, high-efficiency : Ie = 13.0 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Narrow directivity : θ = 15 deg. (typ.) Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P Forward current (DC) I Pulse forward current I Reverse voltage (DC) V Operating ambient temperature Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
75 mW 50 mA
1.5 A 3V
–25 to +85 ˚C
– 40 to +100 ˚C
7.65±0.2
1.0
1.0
11.5±1.0
3.6±0.3
13.5±1.0
2
ø6.0±0.2
2.54
1
Not soldered
2-1.0±0.15 2-0.6±0.15
0.6±0.15
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant intensity at center I Peak emission wavelength λ Spectral half band width ∆λ IF = 50mA 50 nm Forward voltage (DC) V Pulse forward voltage V Reverse current (DC) I Capacitance between pins
C
Half-power angle θ
*
f = 100 Hz, Duty cycle = 0.1 %
IF = 50mA 13 mW/sr
e
IF = 50mA 950 nm
P
IF = 50mA 1.35 1.50 V
F
*
I
FP
R
t
= 1.0A 3.0 V
FP
VR = 3V 10 µA VR = 0V, f = 1MHz 20 pF
The angle in which radiant intencity is 50%
15 deg.
1
Infrared Light Emitting Diodes LN66F
I
— Ta
60
50
(mA)
F
40
30
20
10
Allowable forward current I
0 – 25
F
0 20406080100
Ambient temperature Ta (˚C )
Ie — I
3
10
e
2
10
10
1
(2)
FP
(1) tw = 10µs
f = 100Hz (2) DC Ta = 25˚C
(1)
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
–2
Pulse forward current I
10
–3
10
10
–1
–2
10
Duty cycle (%)
V
F
(V)
F
1.6
1.2
0.8
1
— Ta
tw = 10µs Ta = 25˚C
10 10
IF = 50mA
10mA
(mA)
F
Forward current I
2
e
I
— V
F
80
70
60
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6
F
Ta = 25˚C
Forward voltage VF (V)
I
— Ta
10
1
e
IF = 50mA
–1
Relative radiant intensity I
10
–2
10
1
10 10
2
10
Pulse forward current IFP (mA)
λ
— Ta
1000
980
(nm)
P
960
940
920
P
IF = 50mA
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Forward voltage V
0.4
3
4
10
0 – 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
900 940 980 1020 1060 1100
860
I
= 50mA
F
Ta = 25˚C
Relative radiant intensity I
–1
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
10˚ 20˚
100
90 80 70 60 50 40
Relative radiant intensity (%)
30 20
30˚
40˚
50˚
60˚ 70˚
80˚ 90˚
Wavelength λ (nm)
2
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