Panasonic LN66F Datasheet

Infrared Light Emitting Diodes

LN66F

GaAs Infrared Light Emitting Diode

For light source of remote control systems

ø5.0±0.2

Unit : mm

Features

High-power output, high-efficiency : Ie = 13.0 mW/sr (min.)
Emitted light spectrum suited for silicon photodetectors
Narrow directivity : θ = 15 deg. (typ.)
Transparent epoxy resin package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D

F

*

FP

R

T

opr

stg

75 mW
50 mA

1.5 A
3V

–25 to +85 ˚C

– 40 to +100 ˚C

7.65±0.2

1.0

1.0

11.5±1.0

3.6±0.3

13.5±1.0

2

ø6.0±0.2

2.54

1

Not soldered

2-1.0±0.15
2-0.6±0.15

0.6±0.15

1: Cathode
2: Anode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant intensity at center I
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Pulse forward voltage V
Reverse current (DC) I
Capacitance between pins

C

Half-power angle θ

*

f = 100 Hz, Duty cycle = 0.1 %

IF = 50mA 13 mW/sr

e

IF = 50mA 950 nm

P

IF = 50mA 1.35 1.50 V

F

*

I

FP

R

t

= 1.0A 3.0 V

FP

VR = 3V 10 µA
VR = 0V, f = 1MHz 20 pF

The angle in which radiant intencity is 50%

15 deg.

1

Infrared Light Emitting Diodes LN66F

I

— Ta

60

50

(mA)

F

40

30

20

10

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆Ie — I

3

10

e

2

10

10

1

(2)

FP

(1) tw = 10µs

f = 100Hz
(2) DC
Ta = 25˚C

(1)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

–2

Pulse forward current I

10

–3

10

10

–1

–2

10

Duty cycle (%)

V

F

(V)

F

1.6

1.2

0.8

1

— Ta

tw = 10µs
Ta = 25˚C

10 10

IF = 50mA

10mA

(mA)

F

Forward current I

2

e

I

— V

F

80

70

60

50

40

30

20

10

0

0 0.4 0.8 1.2 1.6

F

Ta = 25˚C

Forward voltage VF (V)

∆I

— Ta

10

1

e

IF = 50mA

–1

Relative radiant intensity ∆I

10

–2

10

1

10 10

2

10

Pulse forward current IFP (mA)

λ

— Ta

1000

980

(nm)

P

960

940

920

P

IF = 50mA

Peak emission wavelength λ

900

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

0.4

3

4

10

0
– 40 0 40 80 120

Ambient temperature Ta (˚C )

Spectral characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

900 940 980 1020 1060 1100

860

I

= 50mA

F

Ta = 25˚C

Relative radiant intensity ∆I

–1

10

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚

100

90
80
70
60
50
40

Relative radiant intensity (%)

30
20

30˚

40˚

50˚

60˚
70˚

80˚
90˚

Wavelength λ (nm)

2