Panasonic LN66 Datasheet
Infrared Light Emitting Diodes
LN66
GaAs Infrared Light Emitting Diode
For optical control systems
ø5.0±0.2
Unit : mm
Features
High-power output, high-efficiency : PO = 8 mW (typ.)
Emitted light spectrum suited for silicon photodetectors
Good radiant power output linearity with respect to input current
Wide directivity : θ = 25 deg. (typ.)
Transparent epoxy resin package
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
160 mW
100 mA
1.5 A
3V
–25 to +85 ˚C
– 40 to +100 ˚C
7.65±0.2
1.0
1.0
11.5±1.0
3.6±0.3
13.5±1.0
2
ø6.0±0.2
2.54
1
Not soldered
2-1.0±0.15
2-0.6±0.15
0.6±0.15
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins
Half-power angle θ
*
PO Classifications
Class RS
P
(mW) 5 to 8 >7
O
*
IF = 50mA 5 8 mW
O
IF = 50mA 950 nm
P
IF = 100mA 1.3 1.6 V
F
VR = 3V 10 µA
R
C
VR = 0V, f = 1MHz 35 pF
t
The angle in which radiant intencity is 50%
25 deg.
1
Infrared Light Emitting Diodes LN66
I
— Ta
120
100
(mA)
F
80
60
40
20
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
∆P
— I
O
3
10
O
2
10
10
1
Relative radiant rower ∆P
–1
10
(2)
FP
(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
–2
Pulse forward current I
10
–3
10
10
–1
–2
10
tw = 10µs
Ta = 25˚C
10 10
1
(mA)
F
Forward current I
2
120
100
80
60
40
20
0
0 0.4 0.8 1.2 2.01.6
Duty cycle (%)
V
— Ta
1.6
F
1.2
(V)
(1)
F
0.8
Forward voltage V
0.4
IF = 100mA
50mA
10mA
10
O
1
–1
10
Relative radiant power ∆P
I
— V
F
F
Ta = 25˚C
Forward voltage VF (V)
∆P
— Ta
O
IF = 50mA
–2
10
110
2
10
Pulse forward current IFP (mA)
λ
— Ta
1000
980
(nm)
P
960
940
920
P
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
2
3
10
IF = 50mA
4
10
0
– 40 0 40 80 120
100
80
60
40
Relative radiant intensity (%)
20
0
860
Ambient temperature Ta (˚C )
Spectral characteristics
I
= 50mA
F
Ta = 25˚C
900 940 980 1020 1060 1100
Wavelength λ (nm)
–2
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative radiant intensity (%)
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
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