Panasonic LN65 Datasheet

Infrared Light Emitting Diodes

LN65

GaAs Infrared Light Emitting Diode

For optical control systems

ø3.5±0.2

4.5±0.3

Unit : mm

4.2±0.3

2.3 1.9

Features

High-power output, high-efficiency : PO = 5.5 mW (typ.)
Good radiant power output linearity with respect to input current
Suited for use in high-speed modulation
Infrared light emission close to monochromatic light :

λP = 950 nm (typ.)

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D
F

*

FP

R

T

opr

stg

160 mW
100 mA

1.5 A
3V

–25 to +85 ˚C

– 40 to +100 ˚C

2.8

12.5 min.

10.0 min.

4.8±0.3

1.8

R1.75

2.4 2.4

1.0

2.54

12

Not soldered

2-0.98±0.2
2-0.45±0.15

0.45±0.15

1.2

1: Cathode
2: Anode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C

Half-power angle θ The angle in which radiant intencity is 50% 35 deg.

IF = 100mA 4.3 5.5 mW

O

IF = 100mA 950 nm

P

IF = 100mA 1.3 1.6 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 50 pF

t

1

LN65 Infrared Light Emitting Diodes

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

I

— V

4

10

3

10

(mA)

FP

2

10

10

1

Pulse forward current I

FP

tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

–2

Pulse forward current I

10

–3

10

10

–1

–2

10

Ta = 25˚C

10 10

1

(mA)

F

Forward current I

2

120

100

80

60

40

20

0

0 0.4 0.8 1.2 2.01.6

Duty cycle (%)

∆P

— I

O

F

120

100

O

80

60

40

Relative radiant power ∆P

20

F

Ta = 25˚C

3

10

O

2

10

10

1

Relative radiant power ∆P

–1

10

I

— V

F

F

Ta = 25˚C

Forward voltage VF (V)

∆P

— I

O

FP

tw = 10µs
(1) f = 100Hz
(2) f = 21kHz
(3) f = 42kHz
(4) f = 60kHz
Ta = 25˚C

(3)

(4)

(1)

(2)

–1

10

0

13524

Forward voltage VF (V)

V

— Ta

1.6

1.2

(V)

F

0.8

Forward voltage V

0.4

0
– 40 0 40 80 120

F

Ambient temperature Ta (˚C )

2

IF = 100mA

50mA

0

20 40 60 80 100 120

0

Forward current IF (mA)

∆P

— Ta

3

10

O

2

10

10

O

IF = 100mA

Relative radiant power ∆P

1
– 40 0 40 80 120

Ambient temperature Ta (˚C )

–2

10

110

2

10

10

Pulse forward current IFP (mA)

λ

— Ta

1000

980

(nm)

P

960

940

920

P

IF = 100mA

Peak emission wavelength λ

900

– 40 0 40 80 120

Ambient temperature Ta (˚C )

3

4

10