Panasonic LN55 Datasheet
Infrared Light Emitting Diodes
LN55
GaAs Infrared Light Emitting Diode
For optical control systems
ø3.5±0.2
4.5±0.3
Unit : mm
4.2±0.3
2.3 1.9
Features
High-power output, high-efficiency : PO = 3.5 mW (typ.)
Suited for use with silicon photodetectors
Infrared light emission close to monochromatic light :
λP = 950 nm (typ.)
High-speed modulation capability
2.8
12.8 min.
10.0 min.
4.8±0.3
2.4 2.4
1.8
1.0
Not soldered
2-0.98±0.2
2-0.45±0.15
0.45±0.15
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
75 mW
50 mA
1A
3V
–25 to +85 ˚C
–30 to +100 ˚C
2.54
R1.75
12
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins
C
Half-power angle θ The angle in which radiant intencity is 50% 35 deg.
IF = 50mA 1.8 3.5 mW
O
IF = 50mA 950 nm
P
IF = 50mA 1.5 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 50 pF
t
1.2
1: Cathode
2: Anode
I
— Ta
60
50
(mA)
F
40
30
20
10
Allowable forward current I
0
– 25
Ambient temperature Ta (˚C )
F
0 20406080100
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
–2
Pulse forward current I
10
–3
10
10
–1
–2
10
Duty cycle (%)
I
— V
F
F
Ta = 25˚C
(mA)
F
Forward current I
2
80
70
60
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6
Forward voltage VF (V)
Ta = 25˚C
10 10
1
1
Infrared Light Emitting Diodes LN55
I
4
10
3
10
(mA)
FP
2
10
10
1
Pulse forward current I
–1
10
0
FP
13524
Forward voltage VF (V)
V
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
F
— V
F
tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C
— Ta
IF = 50mA
10mA
∆P
— I
O
120
100
O
80
60
40
Relative radiant power ∆P
20
0
10 20 30 40 50 60
0
Ta = 25˚C
F
4
10
O
3
10
2
10
10
Relative radiant power ∆P
1
10
Forward current IF (mA)
∆P
— Ta
3
10
O
2
10
10
Relative radiant power ∆P
O
IF = 50mA
1000
980
(nm)
P
960
940
920
∆P
— I
O
FP
(1)
(2)
(3)
(4)
(5)
tw = 10µs
(1) f = 100Hz
(2) f = 21kHz
(3) f = 42kHz
(4) f = 60kHz
(5) DC
Ta = 25˚C
2
10
3
10
Pulse forward current IFP (mA)
λ
— Ta
P
IF = 50mA
4
10
Peak emission wavelength λ
0
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
900 940 980 1020 1060 1100
860
Wavelength λ (nm)
2
1
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
20
Relative radiant intensity(%)
30˚
40˚
50˚
60˚
Modulation output
70˚
10
80˚
90˚
10
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Frequency characteristics
2
10
10
1
–1
–2
1
10
Frequency f (kHz)
10
Ta = 25˚C
2
3
10
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