Panasonic LN52 Datasheet
Infrared Light Emitting Diodes
LN52
GaAs Infrared Light Emitting Diode
For optical control systems
Unit : mm
Features
High-power output, high-efficiency : PO = 6 mW (typ.)
Wide directivity, matched for external optical systems : θ = 100 deg.
Infrared light emission close to monochromatic light : λP = 950 nm
Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
160 mW
100 mA
2A
3V
–25 to +85 ˚C
–30 to +100 ˚C
3.0±0.3
2.0±0.1
12.7 min.
+0.2
–0.1
+0.1
ø5.35
0.2±0.05
–0.2
ø4.2
1.0±0.1
1.0
12
2-ø0.45±0.05
+0.15
–0.1
2.54±0.25
45±3˚
1: Cathode
2: Anode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins
C
Rise time t
Fall time t
Half-power angle θ The angle in which radiant intencity is 50% 100 deg.
IF = 100mA 3.5 6 mW
O
IF = 100mA 950 nm
P
IF = 100mA 1.25 1.6 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 50 pF
t
r
f
= 100mA
I
FP
1 µs
1 µs
1
LN52 Infrared Light Emitting Diodes
I
— Ta
120
100
(mA)
F
80
60
40
20
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
I
— V
4
10
3
10
(mA)
FP
2
10
10
1
Pulse forward current I
–1
10
0
FP
tw = 10µs
Duty Cycle = 0.1%
13524
Ta = 25˚C
Forward voltage VF (V)
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
Pulse forward current I
–2
10
–1
10
11010
Ta = 25˚C
(mA)
F
Forward current I
2
120
100
80
60
40
20
0
0 0.4 0.8 1.2 2.01.6
Duty cycle (%)
∆P
— I
F
120
100
O
80
60
40
Relative radiant power ∆P
20
0
20 40 60 80 100 120
0
Forward current IF (mA)
O
F
Ta = 25˚C
3
10
O
2
10
10
1
Relative radiant power ∆P
–1
10
–2
10
110
Pulse forward current IFP (mA)
I
— V
F
F
Ta = 25˚C
Forward voltage VF (V)
∆P
— I
O
FP
Ta = 25˚C
(1) t
= 10µs
w
Duty Cycle = 0.1%
(2) DC
(2)
3
2
10
10
(1)
4
10
V
— Ta
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
– 40 0 40 80 120
F
IF = 100mA
Ambient temperature Ta (˚C )
2
50mA
10mA
1mA
∆P
— Ta
10
O
1
O
Relative radiant power ∆P
–1
10
– 40 0 40 80
Ambient temperature Ta (˚C )
IF = 100mA
λ
— Ta
1000
980
(nm)
P
960
940
920
P
IF = 100mA
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
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