Panasonic LN51L, LN51F Datasheet

Infrared Light Emitting Diodes

LN51F, LN51L

GaAs Infrared Light Emitting Diodes

For optical control systems

Features

High-power output, high-efficiency : PO = 6 mW (typ.)
Fast response : tr, tf = 1 µs (typ.)
Infrared light emission close to monochromatic light :

λ

=950 nm (typ.)

P

Narrow directivity, suitable for effective use of optical output :
θ = 8 deg. (LN51L)

Wide directivity, matched for external optical systems :
θ = 32 deg. (LN51F)

TO-18 standard type package

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D
F

*

FP

R

T

opr

stg

150 mW
100 mA

2A

5V
–25 to +100 ˚C
–30 to +100 ˚C

LN51F

LN51L

4.5±0.2

12.7 min.

1.0±0.15

6.3±0.3

12.7 min.

1.0±0.15

ø4.6±0.15

1.0±0.2

12

ø5.75 max.

ø4.6±0.15

1.0±0.2

12

Glass window

2-ø0.45±0.05

2.54±0.25

45±3˚

Glass lens

2-ø0.45±0.05

2.54±0.25

45±3˚

Unit : mm

1: Cathode
2: Anode

Unit : mm

ø5.75 max.

1: Cathode
2: Anode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C
Rise time t
Fall time t

Half-power angle

LN51F
LN51L 8 deg.

θ

IF = 100mA 3 6 mW

O

IF = 100mA 950 nm

P

IF = 100mA 1.25 1.5 V

F

VR = 5V 0.005 10 µA

R

VR = 0V, f = 1MHz 50 pF

t

r

I

= 100mA

f

FP

The angle in which radiant intencity is 50%

1 µs
1 µs

32 deg.

1

LN51F, LN51L Infrared Light Emitting Diodes

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

I

— V

10

10

(mA)

FP

10

10

4

3

2

FP

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

tw = 10µs
Ta = 25˚C

120

100

(mA)

F

Forward current I

2

80

60

40

20

0

0 0.4 0.8 1.2 2.01.6

Duty cycle (%)

∆P

— I

F

3

10

O

2

10

10

1

O

FP

(1) t

= 10µs

w

Duty Cycle = 0.1%
(2) DC
Ta = 25˚C

(1)

(2)

10

O

1

I

— V

F

F

Ta = 25˚C

Forward voltage VF (V)

∆P

— Ta

O

IF = 100mA

1

Pulse forward current I

–1

10

0

13524

tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C

Forward voltage VF (V)

Spectral characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

850 900 950 1000 1050 1100

800

Wavelength λ (nm)

I

= 100mA

F

Ta = 25˚C

Relative radiant power ∆P

–1

10

–2

10

110

2

10

Pulse forward current IFP (mA)

Directivity characteristics

LN51F

LN51L

0˚ 10˚ 20˚

100

90
80
70
60
50

40
30
20

Relative radiant power ∆P

4

30˚

40˚

50˚

60˚

Modulation output

70˚
80˚
90˚

10

10

10

3

10

10

Ta = 25˚C

Relative radiant intensity(%)

–1

– 40 0 40 80

Ambient temperature Ta (˚C )

Frequency characteristics

2

10

10

1

–1

–2

10

2

10

Frequency f (kHz)

3

10

Ta = 25˚C

4

10

2