Panasonic LN189M Datasheet

Infrared Light Emitting Diodes

,

LN189M

GaAlAs Infrared Light Emitting Diode

Light source for distance measuring systems

■ Features

• High-power output, high-efficiency: PO = 5.5 mW (typ.)

•

Fast response and high-speed modulation capability: tr, tf = 20 ns (typ.)

•

Infrared light emission close to monochromatic light: λP = 880 nm (typ.)

• Narrow directivity using spherical lenses; works well with optical

systems in auto focus systems

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current

*

Reverse voltage (DC) V
Operating ambient temperature T
Storage temperature T

Note) *: f = 10 kHz, Duty cycle = 25%

D

F

I

FP

R

opr

stg

160 mW

90 mA

175 mA

3V

−25 to +85 °C

−40 to +100 °C

6.0±0.36.0±0.3

2.0±0.2

3.0±0.2

3.4±0.2

1.5

0.1 max.

4.0±0.15

0.75

0.6

1.0

0.35

3.2±0.15

1.0

1

2

0.4±0.1

0.6±0.1

0.6±0.1

0.5±0.1

Mark (Black)

0.2

Spherical lens
φ0.4±0.03

2.2±0.15

1.5±0.2

Unit: mm

0.3

0.15

1: Anode
2: Cathode

3.0±0.15

■ Electro-optical Characteristics Ta = 25°C

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ

O

P

Spectral band width ∆λ IF = 100 mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Rise time t
Fall time t

R

r

f

Half-power angle θ

Precautions for Use

[Airtightness] This product is not structured to provide a complete air seal. Therefore it cannxot be immersed in solutions for

purposes such as boiling tests or ultrasonic cleaning.

[Ability to withstand soldering heat]

The package of this product contains thermoplastic resin which has a limited ability to withstand heat. Therefore
this product cannot be put through automated soldering operations in which the ambient temperature exceeds
the specified temperature. The recommended soldering conditions are as follows.

· Temperature of soldering iron tip: 260°C or less

· Soldering time : 5 seconds or less : 1 second or less

· Soldering position : At least 2 mm away from lead base

[Ability to withstand chemicals]

If the transparent case requires cleaning, wipe it lightly using ethyl alcohol, methyl alcohol, or isopropyl alcohol.
If you plan to use other solvents, carefully check to make sure there are no problems such as a misshapen case or
a change in the condition of the case material.

IF = 100 mA 3 mW
IF = 100 mA 880 nm

IF = 100 mA 1.55 1.9 V

F

VR = 3 V 10 µA
IFP = 100 mA 20 ns
IFP = 100 mA 20 ns
The angle in which radiant intencity is 50%

: 300°C or less

or

]

20 °

1

LN189M Infrared Light Emitting Diodes

120

100

80

(mA)

F

60

40

Forward current I

20

0

−25

0 20406080100

Ambient temperature Ta (°C)

3

10

O

2

10

10

1

Relative radiant power ∆P

−1

10

IF  T

∆PO  I

a

F

(1) tW = 10 µs

Duty = 0.1%

= 50 µs

(2) t

W

Duty = 50%

(3) DC

= 25°C

T

a

(1)

(2)

(3)

160

140

120

(mA)

100

F

80

60

Forward current I

40

20

0

0.5 1.5 2.01.0

0

Forward voltage VF (V)

1.8

1.6

(V)

F

1.4

1.2

Forward voltage V

1.0

IF  V

VF  T

F

Ta = 25°C

a

IF = 80 mA

10 mA

1 mA

IFP  V

1

(A)

FP

−1

10

Pulse forward current I

−2

10

13524

0

Forward voltage VF (V)

∆PO  T

10

O

1

Relative radiant power ∆P

F

t

= 10 µs

W

f = 100 Hz

= 25°C

T

a

a

IF = 90 mA

−2

10

−3

10

10

−1

−2

10

Forward current IF (A)

λP  T

1 000

(nm)

900

P

800

700

Peak emission wavelength λ

600

−40 0 40 80 120

Ambient temperature Ta (°C)

2

1

a

IF = 50 mA

0.8

10

−40 0 40 80 120

Ambient temperature Ta (°C)

Spectral characteristics Directivity characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

820 860 900 940 980 1 020

780

Wavelength λ (nm)

I

= 20 mA

F

−1

10

−40 0 40 80

Ambient temperature Ta (°C)

0° 10° 20°

100

90
80
70
60
50
40
30

Relative radiant intensity (%)

20

30°

40°

50°
60°

70°
80°
90°