Panasonic LN184 Datasheet
Infrared Light Emitting Diodes
,,
LN184
GaAlAs Infrared Light Emitting Diode
Light source for distance measuring systems
Features
High-power output, high-efficiency : PO = 5 mW (typ.)
Fast response and high-speed modulation capability :
Infrared light emission close to monochromatics light :
(typ.)
Narrow directivity using spherical lenses; works well with optical
systems in auto focus systems
Absolute Maximum Ratings (Ta = 25˚C)
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
Pulse conditions : Pulse of f = 10 kHz and duty cycle = 50% modulated
with pulse of f = 0.375 Hz (1.6 s) and duty cycle = 37.5%
D
F
*
FP
R
T
opr
stg
190 mW
230 mA
–25 to +85 ˚C
– 40 to +100 ˚C
tr, tf = 20 ns(typ.)
λP = 880 nm
90 mA
3V
(0.29)
4.5±0.212.7 min.
2.0
2.45±0.25
1.0 max.(0.4)
ø4.6±0.15
ø4.0±0.1
ø5.75max.
Glass window
Spherical lens
2-ø0.45±0.05
12
Unit : mm
1: Anode
2: Cathode
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Rise time t
Fall time t
Half-power angle θ
IF = 100mA 3.5 mW
O
IF = 100mA 880 nm
P
IF = 100mA 1.55 1.9 V
F
VR = 3V 10 µA
R
I
r
f
= 100mA 20 ns
FP
I
= 100mA 20 ns
FP
The angle in which radiant intencity is 50%
20 deg.
1
LN184 Infrared Light Emitting Diodes
I
— Ta
120
100
(mA)
F
80
60
40
20
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
∆P
— I
O
3
10
O
2
10
10
1
Relative radiant power ∆P
–1
10
FP
(1) tw = 10µs
Duty = 0.1%
(2) tw = 50µs
Duty = 50%
(3) DC
Ta = 25˚C
(1)
(2)
(3)
I
— V
F
160
140
120
(mA)
F
100
80
60
40
Forward current I
20
0
0 0.5 1.0 1.5 2.0
F
Forward voltage VF (V)
V
— Ta
1.8
1.6
(V)
F
1.4
1.2
Forward voltage V
1.0
F
Ta = 25˚C
IF = 100mA
10mA
1mA
I
FP
(A)
FP
10
1
–1
Pulse forward current I
–2
10
0
13524
Pulse forward voltage VFP (V)
∆P
10
O
1
O
Relative radiant power ∆P
— V
FP
t
= 10µs
w
f = 100Hz
Ta = 25˚C
— Ta
IF = 100mA
–2
10
–3
–2
10
10
–1
10
Pulse forward current IFP (A)
λ
— Ta
1000
(nm)
900
P
800
700
P
Peak emission wavelength λ
600
– 40 0 40 80 120
Ambient temperature Ta (˚C )
2
1
IF = 100mA
0.8
10
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
780
I
= 100mA
F
820 860 900 940 980 1020
Wavelength λ (nm)
–1
10
– 40 0 40 80
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚
100
90
80
70
60
50
40
30
Relative radiant intensity (%)
20
30˚
40˚
50˚
60˚
70˚
80˚
90˚
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