Panasonic LN175 Datasheet

Infrared Light Emitting Diodes

LN175

GaAlAs Infrared Light Emitting Diode

For optical control systems

Features

High-power output, high-efficiency : PO = 12 mW (typ.)
Emitted light spectrum suited for silicon photodetectors :

λ

= 900 nm (typ.)

P

Good radiant power output linearity with respect to input current
Wide directivity : θ = 120 deg. (typ.)

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D

F

*

FP

R

T

opr

stg

170 mW
100 mA

2A
3V

–25 to +85 ˚C

– 40 to +100 ˚C

4.5±0.15

3.5±0.15

3.9±0.2512.8 min.

(2.95) 1.5±0.2

12

2.54

1.6±0.15

Not soldered 0.8 max.

2-1.2±0.3
2-0.45±0.15

0.8±0.1

0.45±0.15

Unit : mm

2.1±0.15

1: Cathode
2: Anode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 70 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C

Response time tr, t
Half-power angle θ

IF = 100mA 7 12 mW

O

IF = 100mA 900 nm

P

IF = 100mA 1.4 1.7 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 50 pF

t

IF = 100mA 700 ns

f

The angle in which radiant intencity is 50%

120 deg.

1

Infrared Light Emitting Diodes LN175

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆P

— I

O

3

10

O

2

10

10

1

FP

(1) tw = 10µs
f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

–1

10

11010

tw = 10µs
Ta = 25˚C

10

(A)

FP

1

–1

10

Pulse forward current I

–2

10

2

0

Duty cycle (%)

V

— Ta

1.6

F

1.2

(V)

(1)

F

0.8

IF = 100mA

10mA

1mA

10

O

1

I

— V

FP

13524

F

t

= 10µs

w

f = 100Hz
Ta = 25˚C

Forward voltage VF (V)

∆P

— Ta

O

IF = 100mA

Relative radiant power ∆P

–1

10

–2

10

–3

–2

10

10

–1

10

1

Pulse forward current IFP (A)

λ

— Ta

960

940

(nm)

P

920

900

880

P

IF = 100mA

Peak emission wavelength λ

860

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

0.4

10

0
– 40 0 40 80 120

Ambient temperature Ta (˚C )

Spectral characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

780

I

= 100mA

F

Ta = 25˚C

820 860 900 940 980 1020

Wavelength λ (nm)

Relative radiant power ∆P

–1

10

– 40 0 40 80

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚ 30˚

150

100

50

Relative radiant

40˚

50˚

60˚
70˚

intensity(%)

80˚
90˚
100˚

110˚
120˚

130˚

2