Panasonic LN162S Datasheet
Infrared Light Emitting Diodes
LN162S
GaAs Infrared Light Emitting Diode
For optical control systems
Features
High-power output, high-efficiency : PO = 3.5 mW (typ.)
Infrared light emission close to monochromatic light :
λP = 950 nm (typ.)
Small ceramic package
3.75±0.3
2.0±0.2
12.5 min.
Unit : mm
ø3.0±0.15
ø0.3±0.05
ø0.45±0.05
0.9±0.15
Absolute Maximum Ratings (Ta = 25˚C)
1
2
Parameter Symbol Ratings Unit
Power dissipation P
Forward current (DC) I
Pulse forward Current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T
*
f = 100 Hz, Duty cycle = 0.1 %
D
F
*
FP
R
T
opr
stg
75 mW
50 mA
1A
3V
–25 to +85 ˚C
–30 to +100 ˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 50mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins
C
Half-power angle θ
IF = 50mA 1.5 3.5 mW
O
IF = 50mA 950 nm
P
IF = 50mA 1.2 1.5 V
F
VR = 3V 10 µA
R
VR = 0V, f = 1MHz 50 pF
t
The angle in which radiant intencity is 50%
80 deg.
1: Anode
2: Cathode
1
Infrared Light Emitting Diodes LN162S
I
— Ta
60
50
(mA)
F
40
30
20
10
Allowable forward current I
0
– 25
F
0 20406080100
Ambient temperature Ta (˚C )
I
— V
4
10
3
10
(mA)
FP
2
10
10
1
Pulse forward current I
FP
tw = 10µs
Duty Cycle = 0.1%
Ta = 25˚C
I
— Duty cycle
FP
2
10
10
(A)
FP
1
–1
10
–2
Pulse forward current I
10
–3
10
10
–1
–2
10
Ta = 25˚C
10 10
1
(mA)
F
Forward current I
2
80
70
60
50
40
30
20
10
0
0 0.4 0.8 1.2 1.6
Duty cycle (%)
∆P
— Ta
F
3
10
O
2
10
10
Relative radiant power ∆P
O
IF = 50mA
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
I
— V
F
F
Ta = 25˚C
Forward voltage VF (V)
V
— Ta
F
IF = 50mA
10mA
–1
10
0
13524
Forward voltage VF (V)
λ
— Ta
1000
980
(nm)
P
960
940
920
P
Peak emission wavelength λ
900
– 40 0 40 80 120
Ambient temperature Ta (˚C )
2
IF = 50mA
1
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Spectral characteristics
100
80
60
40
Relative radiant intensity (%)
20
0
900 940 980 1020 1060 1100
860
Wavelength λ (nm)
I
F
Ta = 25˚C
= 50mA
0
– 40 0 40 80 120
Ambient temperature Ta (˚C )
Directivity characteristics
0˚ 10˚ 20˚ 30˚
100
80
60
40
intensity (%)
Relative radiant
20
40˚
50˚
60˚
70˚
80˚
90˚
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