Panasonic LN152 Datasheet

Infrared Light Emitting Diodes

LN152

GaAs Infrared Light Emitting Diode

For optical control systems

Unit : mm

Features

High-power output, high-efficiency : PO = 10 mW (typ.)
Wide directivity, matched for external optical systems :
Infrared light emission close to monochromatic light :

λP = 950 nm (typ.)

Optimum for mesuring instruments and control equipments
in conbination with silicon photodetectors

High-speed modulation

Absolute Maximum Ratings (Ta = 25˚C)

Parameter Symbol Ratings Unit

Power dissipation P
Forward current (DC) I
Pulse forward current I
Reverse voltage (DC) V
Operating ambient temperature
Storage temperature T

*

f = 100 Hz, Duty cycle = 0.1 %

D
F

*

FP

R

T

opr

stg

160 mW
100 mA

1.5 A
3V

–25 to +85 ˚C

–30 to +100 ˚C

θ = 100 deg.

3.0±0.3

2.0±0.1

12.7 min.

+0.2

–0.1

+0.1

ø5.35

0.2±0.05

–0.2

ø4.2

1.0±0.1

1.0

12

2-ø0.45±0.05

+0.15

–0.1

2.54±0.2

45±3˚

1: Anode
2: Cathode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter Symbol Conditions min typ max Unit

Radiant power P
Peak emission wavelength λ
Spectral half band width ∆λ IF = 100mA 50 nm
Forward voltage (DC) V
Reverse current (DC) I
Capacitance between pins

C
Rise time t
Fall time t
Half-power angle θ The angle in which radiant intencity is 50% 100 deg.

IF = 100mA 5 10 mW

O

IF = 100mA 950 nm

P

IF = 100mA 1.3 1.6 V

F

VR = 3V 10 µA

R

VR = 0V, f = 1MHz 60 pF

t

r

I

= 100mA

f

FP

1 µs
1 µs

1

Infrared Light Emitting Diodes LN152

I

— Ta

120

100

(mA)

F

80

60

40

20

Allowable forward current I

0
– 25

F

0 20406080100

Ambient temperature Ta (˚C )

∆P

— I

O

3

10

O

2

10

10

1

FP

(1) t

= 10µs

w

f = 100Hz
(2) DC
Ta = 25˚C

(2)

I

— Duty cycle

FP

2

10

10

(A)

FP

1

–1

10

–2

Pulse forward current I

10

–3

10

10

–1

–2

10

tw = 10µs
Ta = 25˚C

10 10

1

2

3

10

2

10

(mA)

FP

10

1

–1

10

Pulse forward current I

–2

10

0

Duty cycle (%)

V

— Ta

1.6

F

IF = 100mA

1.2

(V)

(1)

F

0.8

50mA
10mA

10

O

1

I

— V

FP

13524

F

t

= 10µs

w

f = 100Hz
Ta = 25˚C

Forward voltage VF (V)

∆P

— Ta

O

IF = 50mA

Relative radiant power ∆P

–1

10

–2

10

110

2

10

10

Pulse forward current IFP (mA)

λ

— Ta

1000

980

(nm)

P

960

940

920

P

IF = 100mA

Peak emission wavelength λ

900

– 40 0 40 80 120

Ambient temperature Ta (˚C )

Forward voltage V

0.4

3

4

10

0
– 40 0 40 80 120

Ambient temperature Ta (˚C )

Spectral characteristics

100

80

60

40

Relative radiant intensity (%)

20

0

850 900 950 1000 1050 1100

800

I

= 100mA

F

Ta = 25˚C

Relative radiant power ∆P

–1

10

– 40 0 40 80

Ambient temperature Ta (˚C )

Directivity characteristics

0˚ 10˚ 20˚ 30˚

100

80
60

40
20

Relative radiant

intensity(%)

40˚

50˚

60˚
70˚

80˚
90˚

Wavelength λ (nm)

2