Panasonic GN08062 Datasheet

GaAs MMICs GN8062

GN8062

GaAs IC

For semiconductor laser drive

■ Features

●

High-speed switching

●

High output

●

Pulse current and DC bias current can be controlled.

■ Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Power supply voltage

Pin voltage

Power current

Output current
Allowable power dissipation
Channel temperature
Storage temperature
Operating ambient temperature

Symbol

V

DD

V

SS

V

IN

V

Ip

* 5

V

OUT

* 1

I

DD

* 4

I

SS

I

OUT

P

D

* 2

T

ch

T

stg

T

opr

* 3

Rating

6

– 6

– 0.5 to V

DD

–1.5

1.5 to V

DD

V

DD

50

40
145
700
150

– 55 to +150

–10 to +75

Unit

V
V
V
V

V
mA
mA
mA

mW

˚C
˚C
˚C

■ Electrical Characteristics (Ta = 25˚C)

Parameter

Pulse output current

Supply current

Input voltage

Rise time
Fall time

Test circuit

1
1
2
2

3
3

Condition
VDD= 5V, VSS= –5V, VIN= 2V, Ip=120mA, RL=10Ω
VDD= 5V, VSS= –5V, VIN= 0.4V, Ip=120mA, RL=10Ω
VDD= 5V, VSS= – 5V, VIN= 0.4V
I

p

= 0, RL=10Ω

VDD= 5V, VSS= – 5V, Ip=100mA
RL=10Ω

Min

100

2.5

Typ
120

1
35
25

Max

5
50
40

0.4
7
5

Unit

mA
mA
mA
mA

V

V
ns
ns

Unit : mm

1 : GND
2 : NC
3 : NC
4 : OUT
5 : V

IP

6 : V

DD

7 : V

IN

8 : V

SS

8-Lead Plastic DIL Package

* 1 Do not apply the voltage higher than the set VDD.
* 2 Guaranteed value of the unit at Ta= 25˚C.
* 3 Range in which the IC circuit function operates and not the guaranteed range of

electric characteristics.
* 4 IDD is a current when the pulse output current is zero.
* 5 Voltage when the constant current source has been connected.

Symbol

I

pmax.

I

pmin.

I

DD

* 1

I

SS

V

IH

V

IL

t

r

* 2

t

f

* 2

0.51.3typ.

4.0max.

0.7min.

4.5max.

0.35max.

6.4±0.2

7.62±0.2

2.54±0.25

10max.

0 to 15˚

1
2
3
4

8
7
6
5

GaAs MMICs GN8062

* 1 The current value to be supplied from the 5V power supply is a total sum of this value plus the pulse output current and bias output current.

* 2 Waveform of input and output signals

Input signal

Output waveform

Test circuit 1 Test circuit 2

Test circuit 3

C1 : 0.1µF
C2 : 3.3µF
R1 : 10Ω
R2 : 50Ω

90%

t

f

t

r

10%

t

r ··· 10% to 90%

t

f ··· 90% to 10%

V

IN

I

P

=120mA

–5V

1234

8765

5V

C1 C2

–
+

C2

+
–

C2

R

L

C1

+
–

5V

C1

A

0.4V

I

P

=0mA

–5V

1234

8765

5V

C1 C2

–
+

C2

+
–

C2

R

L

C1

+
–

5V

C1

A

A

PULSE
GENERATOR

I

P

=100mA

–5V

1234

8765

5V

C1 C2

R2

–
+

C2

+
–

C2

R1

FET PROBE

C1

+
–

5V

C1

10µS

2

µS

2.5V min.

0.4V max.

*

The rise/fall time of the input signal

is 2ns (10 to 90%)