Panasonic CNZ2253 Datasheet
Reflective Photosensors (Photo Reflectors)
,,
CNZ2253
Reflective Photosensor
Overview
CNZ2253 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si Darlington
phototransistor is used as the light detecting element. The two
elements are located parallel in the same direction and objects are
detected when passing in front of the device.
Features
High sensitivity Small size and light weight
Applications
Detection of paper, film and cloth Optical mark reading
Detection of position and edge Detection of coin and bill
Start, end mark detection of magnetic tape
Mark for indicating
LED side
7.5±0.2
(3.2)
4.0±0.2
10.6±0.3
9.6±0.3
6.0±0.210.2 min.
1.7±0.2
(7.2)
2
14
3.0±0.2
ø2.2±0.2
ø0.45±0.05
ø0.3±0.05
*2-0.9±0.15
3
0.5
Unit : mm
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
*1
P
D
V
CEO
V
ECO
I
C
*2
P
C
T
opr
T
stg
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals CtVR = 0V, f = 1MHz 50 pF
Output characteristics
Transfer
characteristics
Collector cutoff current
Collector current
Response time
Collector to emitter saturation voltage
*1
IC classifications
Class Q R S
IC (mA) 3 to 9 6 to 18 12 to 30
*3
Time required for the collector current to increase
from 10% to 90% of its final value.
*4
Time required for the collector current to decrease
from 90% to 10% of its initial value.
Symbol
VFIF = 50mA 1.2 1.5 V
IRVR = 3V 10 µA
I
CEOVCE
*1*2
I
C
*4
t
, t
r*3
f
V
CE(sat)IF
Ratings Unit
(Note)
1. ( ) Dimension is reference
2. * is dimension at the root of leads
1432
Pin connection
3V
50 mA
75 mW
20 V
5V
30 mA
100 mW
–25 to +85 ˚C
–30 to +100
˚C
*1
Input power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.34 mW/˚C at Ta ≥ 25˚C.
Conditions min typ max Unit
= 10V 0.5 µA
V
= 5V, IF = 10mA, RL = 100Ω 330mA
CC
V
= 10V, IC = 1mA, RL = 100Ω 150 µs
CC
= 50mA, IC = 1mA 1.5 V
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
V
I
F
90%
t
r
10%
t
f
CC
I
C
d = 3 mm
R
L
Standard white paper
(Reflective ratio 90%)
1
CNZ2253 Reflective Photosensors (Photo Reflectors)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
10
10
(mA)
C
10
3
2
F
V
Ta = 25˚C
R
= 5V
CC
= 100Ω
L
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
3
10
2
10
(mA)
C
10
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
Ta = 25˚C
IF = 20mA
10mA
V
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
– 40 – 20
F
0 20406080100
Ambient temperature Ta (˚C )
I
160
120
(%)
C
V
CC
= 10mA
I
F
= 100Ω
R
L
80
C
= 5V
— Ta
— Ta
IF = 50mA
10mA
1
Collector current I
–1
10
1
10 10
Forward current IF (mA)
I
3
10
2
10
(µA)
10
CEO
1
Dark current I
–1
10
–2
10
CEO
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
2
VCE = 10V
3
10
1
Collector current I
–1
10
–1
10
11010
Collector to emitter voltage VCE (V)
t
— I
r
4
10
3
10
(µs)
r
2
10
C
Rise time t
10
1
–2
10
–1
Collector current IC (mA)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
11010
500Ω
100Ω
40
Relative output current I
2
0
16
12
(mA)
C
8
4
Collector current I
0
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
V
= 5V
CC
Ta = 25˚C
= 100Ω
R
L
= 1.5mA
I
F
24 86
Distance d (mm)
d
2
Loading...