Reflective Photosensors (Photo Reflectors)
CNZ2179
Reflective Photosensor
Overview
CNZ2179 is a reflective photosensor with a long focal distance,
in which a high efficiency GaAs infrared light emitting diode is used
as a light emitting element and a high sensitivity Si phototransistor
is used as the light detecting element.
Features
Long focal distance : 6 mm (typ.)
Visible light cutoff resin is used
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Input (Light
emitting diode)
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Output (Photo
transistor)
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Temperature
*1
Input power derating ratio is 1.25 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is 1.67 mW/˚C at Ta ≥ 25˚C.
Operating ambient temperature
Storage temperature T
Symbol
V
R
I
F
*1
P
D
I
C
V
CEO
V
ECO
*2
P
C
T
opr
stg
Ratings Unit
3V
50 mA
75 mW
20 mA
20 V
5V
100 mW
–25 to +80 ˚C
–30 to +85 ˚C
5.2
13.0
8.0
0.85max.
(2-0.5)
(7.6)
14
23
(Note)
1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
(2-0.5)
(2.54)
1432
Pin connection
Unit : mm
10 min.
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Transfer
characteristics
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely.)
I
F
Forward voltage (DC)
Reverse current (DC)
Collector cutoff current
Collector current
Response time
Collector to emitter saturation voltage
V
CC
I
C
R
L
Standard white paper
(Reflective ratio 90%)
Symbol
Conditions min typ max Unit
VFIF = 50mA 1.3 1.5 V
IRVR = 3V 10 µA
I
CEOVCE
*1
I
C
t
, t
r*2
V
CE(sat)IF
d = 5 mm
= 10V 0.2 µA
V
= 5V, IF = 20mA, RL = 100Ω 180 1500 µA
CC
*3
V
= 10V, IC = 0.1mA, RL = 100Ω
f
CC
20 µs
= 50mA, IC = 0.1mA 0.5 V
*2
Time required for the collector current to increase from
10% to 90% of its final value.
*3
Time required for the collector current to decrease from
90% to 10% of its initial value.
90%
10%
t
t
r
f
1
CNZ2179 Reflective Photosensors (Photo Reflectors)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
2
10
10
(mA)
C
1
–1
10
Collector current I
F
VCE = 5V
Ta = 25˚C
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
–1
10
Collector current I
I
I
F
C
— V
— V
F
CE
IF = 30mA
20mA
10mA
Ta = 25˚C
Ta = 25˚C
V
— Ta
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
– 40 – 20
F
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
160
120
(%)
C
80
40
C
Relative output current I
IF = 50mA
10mA
1mA
V
= 5V
CC
= 20mA
I
F
= 100Ω
R
L
–2
10
–1
10
10
1
(µA)
CEO
–1
10
–2
Dark current I
10
–3
10
2
11010
Forward current IF (mA)
I
— Ta
CEO
VCE = 10V
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
2
–2
10
–1
10
11010
Collector to emitter voltage VCE (V)
t
— I
r
3
10
2
10
(µs)
r
10
C
Rise time t
1
–1
10
–2
10
–1
Collector current IC (mA)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
11010
500Ω
100Ω
2
0
100
80
(%)
C
60
40
20
Relative output current I
0
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
V
= 5V
CC
Ta = 25˚C
RL = 100Ω
IF = 20mA
Distance d (mm)
161284