Panasonic CNZ2153 Datasheet
Reflective Photosensors (Photo Reflectors)
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CNZ2153
Reflective Photosensor
Overview
CNZ2153 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a Si phototransistor is used as the
light detecting element. The two elements are located parallel in the
same direction and objects are detected when passing in front of the
device.
Features
Fast response
Small size and light weight
Applications
Detection of paper, film and cloth Optical mark reading
Detection of position and edge Detection of coin and bill
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Input (Light
emitting diode)
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector to emitter voltage
Output (Photo
transistor)
Emitter to collector voltage
Collector current
Collector power dissipation
Temperature
*1
Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is 0.67 mW/˚C at Ta ≥ 25˚C.
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
*1
P
D
V
CEO
V
ECO
I
C
*2
P
C
T
opr
T
stg
Ratings Unit
3V
50 mA
75 mW
30 V
5V
20 mA
50 mW
–25 to +85 ˚C
–30 to +100
˚C
Mark for indicating
LED side
7.5±0.2
(3.2)
4.0±0.2
10.6±0.3
9.6±0.3
6.0±0.210.2 min.
1.7±0.2
(7.2)
2
14
(Note)
1. ( ) Dimension is reference
2. * is dimension at the root of leads
3.0±0.2
ø2.2±0.2
ø0.45±0.05
ø0.3±0.05
*2-0.9±0.15
3
Unit : mm
0.5
1432
Pin connection
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Transfer
characteristics
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
I
F
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals CtVR = 0V, f = 1MHz 50 pF
Collector cutoff current
Collector current
Response time
Collector to emitter saturation voltage
V
CC
I
C
R
L
Standard white paper (Reflective ratio 90%)
Symbol
Conditions min typ max Unit
VFIF = 50mA 1.2 1.5 V
IRVR = 3V 10 µA
I
CEOVCE
*1
I
C
t
, t
r*2
V
CE(sat)IF
d = 3 mm
= 10V 0.2 µA
V
= 5V, IF = 20mA, RL = 100Ω 100 µA
CC
*3
V
= 10V, IC = 0.1mA, RL = 100Ω
f
CC
6 µs
= 50mA, IC = 0.1mA 0.5 V
*2
Time required for the collector current to increase from
10% to 90% of its final value.
*3
Time required for the collector current to decrease from
90% to 10% of its initial value.
t
t
r
90%
10%
f
1
CNZ2153 Reflective Photosensors (Photo Reflectors)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
10
1
(mA)
C
–1
10
–2
10
Collector current I
F
VCC = 5V
R
Ta = 25˚C
= 100Ω
L
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
–1
10
Collector current I
I
I
F
C
— V
— V
F
CE
IF = 30mA
Ta = 25˚C
Ta = 25˚C
20mA
10mA
V
— Ta
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
– 40 – 20
F
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
160
120
(%)
C
80
40
C
Relative output current I
IF = 50mA
10mA
V
= 5V
CC
= 20mA
I
F
= 100Ω
R
L
–3
10
–1
10
10
1
(µA)
–1
10
CEO
–2
10
Dark current I
–3
10
–4
10
2
11010
Forward current IF (mA)
I
— Ta
CEO
VCE = 10V
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
2
–2
10
–1
10
11010
Collector to emitter voltage VCE (V)
t
— I
r
3
10
2
10
(µs)
r
10
C
RL = 1kΩ
Rise time t
1
–1
10
–2
10
–1
Collector current IC (mA)
VCC = 10V
Ta = 25˚C
500Ω
11010
100Ω
2
0.32
0.24
(mA)
C
0.16
0.06
Collector current I
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
0
24 86
0
Distance d (mm)
V
= 5V
CC
Ta = 25˚C
= 100Ω
R
L
= 20mA
I
F
d
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