Panasonic CNZ2152 Datasheet
Reflective Photosensors (Photo Reflectors)
,
CNZ2152
Reflective Photosensor
Overview
CNZ2152 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Features
Fast response High sensitivity
High SN ratio
Applications
Detection of paper, film and cloth Optical mark reading
Detection of coin and bill Detection of position and edge
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
*1
P
D
V
CEO
V
ECO
I
C
*2
P
C
T
opr
T
stg
Ratings Unit
3V
100 mA
150 mW
20 V
3V
30 mA
150 mW
–25 to +85 ˚C
–30 to +100
˚C
Mark for
indicating
LED side
ø1.5
3.2±0.2
8.0±0.2
+0.1
14.0
–0.2
+0.1
–0.2
16.0±0.3
1.0
3.5±0.2
10.0±0.2
7.0 min.
2
6.2±0.2
1
(Note) ( ) Dimension is reference
*1
Input power derating ratio is
ø2.2±0.2
+0.1
ø0.9
–0.2
4-ø0.45
(10.0) (2.54)
3
4
2.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
2.0 mW/˚C at Ta ≥ 25˚C.
Unit : mm
1.0(typ.)
1432
Pin connection
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Transfer
characteristics
*1 *2
(Ambient light is shut off completely)
I
F
Forward voltage (DC)
Reverse current (DC)
Collector cutoff current
Collector current
Response time
Collector to emitter saturation voltage
Transfer characteristics measurement circuit
V
CC
I
C
R
L
Test paper
Symbol
Conditions min typ max Unit
VFIF = 100mA 1.25 1.5 V
IRVR = 3V 10 µA
I
CEOVCE
*1
I
C
*2
I
C
t
, t
r*3
V
CE(sat)IF
d = 5 mm
*1
*2
= 10V 0.05 2 µA
V
= 5V, IF = 20mA, RL = 100Ω
CC
*4
V
= 10V, IC = 1mA, RL = 100Ω 8 µs
f
CC
0.8 3 mA
500 µA
= 100mA, IC = 1mA 0.6 V
*3
Time required for the collector current to increase from
10% to 90% of its final value.
*4
Time required for the collector current to decrease from
90% to 10% of its initial value.
Standard white paper (reflective ratio 90%)
Tracing paper (paper SM-1 for 2nd original paper)
1
CNZ2152 Reflective Photosensors (Photo Reflectors)
IF , I
— Ta
120
(mA)
C
100
, I
F
80
60
40
20
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
2
10
VCC = 5V Ta = 25˚C
RL = 100Ω
(1) White paper
(Reflective ratio 90%)
(2) Tracing paper
10
(Paper SM - 1 for 2nd
original paper)
(mA)
C
1
–1
10
Collector current I
F
(1)
I
— V
F
120
100
80
(mA)
F
60
40
Forward current I
20
0
0.4 0.8 1.2 1.6 2.42.0
0
F
Ta = 25˚C
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
– 40 – 20
Forward voltage VF (V)
I
— V
C
16
12
(mA)
C
8
(2)
4
Collector current I
IF = 100mA
80mA
60mA
CE
50mA
40mA
Ta = 25˚C
30mA
20mA
10mA
160
120
(%)
C
80
40
Relative output current I
V
— Ta
F
IF = 100mA
50mA
0 20406080100
Ambient temperature Ta (˚C )
I
— Ta
C
V
= 5V
CC
= 20mA
I
F
= 100Ω
R
L
–2
10
–1
10
3
10
2
10
(µA)
10
CEO
1
Dark current I
–1
10
–2
10
2
11010
Forward current IF (mA)
I
— Ta
CEO
VCE = 25V 10V
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
2
0
4 8 12 16 20 24
0
Collector to emitter voltage VCE (V)
t
— I
r
3
10
2
10
(µs)
r
10
C
Rise time t
V
Sig.IN
1
V
50Ω
–1
10
–2
10
CC
V
1
Sig.
OUT
V
V
1
2
2
R
L
–1
Collector current IC (mA)
VCC = 10V
Ta = 25˚C
RL = 1kΩ
t
r
11010
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
16
12
(mA)
C
100Ω
90%
10%
t
d
t
f
8
White paper (Reflective ratio 90%)
4
Collector current I
0
0
C
Mirror
24 121086
V
= 5V
CC
Ta = 25˚C
= 20mA
I
F
= 100Ω
R
L
d
Distance d (mm)
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