Integrated Photosensors
CNZ1414A
Integrated Photosensor
Overview
CNZ1414A is ultraminiature, highly reliable transmissive
photosensor that has a high efficiency GaAs infrared light emitting
diode chip and a low voltage operation type high sensitivity Siintegrated-photodetector chip wich are in a double molded resin
package.
Features
Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm)
Low voltage operation, low current consumption
(V
= 2.2 to 7 V, I
CC
Fast response : t
Highly precise position detection (slit width : 0.3 mm)
Gap width : 1.2 mm
With attachment positioning pin
=0.8 mA typ.)
CCL
= 3 µs, t
PHL
= 8 µs (typ.)
PLH
A
A'
Device
4.2±0.1
center
1.2
+0.15
0.5
(R0.1)
(2-C0.3)
2-0.25
*3.2
3
4
5
–0
(1.0)
3.0
5.2
4.0 min.
1
2
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
(0.3)
(1.5)
SEC. A-A'
3.0±0.05
(2-C0.3)
2-ø0.8±0.05
Gate the rest
0.3 max.
1: Anode 4: V
2: Cathode 5: GND
3: V
CC
Unit : mm
4.2
Not soldered 1.0 max.
3-0.5
*2-1.27
O
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Input (Light
emitting diode)
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Output current
Output
(Photo IC)
Output voltage
Supply voltage
Power dissipation
Temperature
*1
Input power derating ratio is 1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is 1.07 mW/˚C at Ta ≥ 25˚C.
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
*1
P
D
I
O
V
O
V
CC
*2
P
C
T
opr
T
stg
Pin Connection
CNZ1414A
(Normally ON type)
Const. Voltage Cir.
Anode 1
3 V
4 V
Ratings Unit
6V
50 mA
75 mW
8mA
12 V
7V
80 mW
–25 to +85 ˚C
– 40 to +100
CC
O
˚C
Cathode 2
5 GND
1
Integrated Photosensors CNZ1414A
V
CC
V
O
GND
V
CC
V
O
GND
0.1µF
R
L
Electrical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Input
characteristics
Forward voltage (DC)
Reverse current (DC)
“H” Output current
“L” Output voltage
Output
characteristics
Operating power voltage V
“L” Supply current
“H” Supply current
Threshold input current I
Transfer
characteristics
*
Switching time measurement circuit
Sig.IN
50Ω
Hysteresis
Response time
Const. Voltage Cir.
RL = 1kΩ
V
Sig.OUT
I
FLH/IFHLVCC
CC
V
F
I
R
I
OH
V
OL
CC
I
CCL
I
CCH
FH→L
*
t
PHL
*
t
PLH
(Input pulse)
(Output pulse)
IF = 20mA 1.2 1.4 V
VR = 3V 10 µA
V
V
CC
CC
= 5V, V
= 5V, I
= 12V, IF = 0mA 100 µA
OH
= 5mA, IF = 2mA 0.15 0.4 V
OL
2.2 7 V
V
= 5V, IF = 2mA 0.8 2 mA
CC
V
= 5V, IF = 0mA 0.8 2 mA
CC
V
= 2.2V 2 mA
CC
= 2.2V 0.85
V
= 5V, IF = 2mA, RL = 1kΩ
CC
t
PHLtPLH
50%
V
OH
1.5V
V
OL
t
: H L Propagation time
PHL
: L H Propagation time
t
PLH
3 µs
8 µs
Important Information for Soldering
1. Soldering Position
A : Make sure the distance is 0.1 mm or more.
A
Soldering bath
2. Solder Temperature and Soldering Time
Temperature : 260˚C or less
Time : within 3 seconds
Note) Avoid using reflow soldering methods.
3. Other Issues
1) Soldering should not create excessive thermal or mechanical stress on the case package or leads.
Excessive stress may cause changes in the shape or characteristics of the package or leads.
2) Be careful not to allow solder, flux, solvents, etc. to remain on the case package.
Doing so may cause problems related to transmission characteristics, etc.
Important Information Related to Power Source Voltage
In order to stabilize the power line, use a decoupling capacitor of
approximately 0.1 µF between VCC and the GND line near the device .
2