Panasonic CNZ1414A Datasheet

Integrated Photosensors
CNZ1414A
Integrated Photosensor
Overview
CNZ1414A is ultraminiature, highly reliable transmissive photosensor that has a high efficiency GaAs infrared light emitting diode chip and a low voltage operation type high sensitivity Si­integrated-photodetector chip wich are in a double molded resin package.
Features
Ultraminiature : 4.2 × 4.2 mm (height : 5.2 mm)
Low voltage operation, low current consumption
(V
= 2.2 to 7 V, I
Fast response : t
Highly precise position detection (slit width : 0.3 mm)
Gap width : 1.2 mm
With attachment positioning pin
=0.8 mA typ.)
CCL
= 3 µs, t
PHL
= 8 µs (typ.)
PLH
A
A'
Device
4.2±0.1
center
1.2
+0.15
0.5 (R0.1)
(2-C0.3)
2-0.25
*3.2
3 4 5
–0
(1.0)
3.0
5.2
4.0 min.
1 2
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
4. Burrs should be less than 0.15mm
(0.3)
(1.5)
SEC. A-A'
3.0±0.05 (2-C0.3)
2-ø0.8±0.05
Gate the rest
0.3 max.
1: Anode 4: V 2: Cathode 5: GND 3: V
CC
Unit : mm
4.2
Not soldered 1.0 max.
3-0.5
*2-1.27
O
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Input (Light emitting diode)
Reverse voltage (DC) Forward current (DC) Power dissipation Output current
Output (Photo IC)
Output voltage Supply voltage Power dissipation
Temperature
*1
Input power derating ratio is 1.0 mW/˚C at Ta 25˚C.
*2
Output power derating ratio is 1.07 mW/˚C at Ta 25˚C.
Operating ambient temperature Storage temperature
Symbol
V
R
I
F
*1
P
D
I
O
V
O
V
CC
*2
P
C
T
opr
T
stg
Pin Connection
CNZ1414A
(Normally ON type)
Const. Voltage Cir.
Anode 1
3 V
4 V
Ratings Unit
6V 50 mA 75 mW
8mA 12 V
7V 80 mW
–25 to +85 ˚C
– 40 to +100
CC
O
˚C
Cathode 2
5 GND
1
Integrated Photosensors CNZ1414A
V
CC
V
O
GND
V
CC
V
O
GND
0.1µF
R
L
Electrical Characteristics (Ta = 25˚C)
Parameter Symbol Conditions min typ max Unit
Input characteristics
Forward voltage (DC) Reverse current (DC) “H” Output current “L” Output voltage
Output characteristics
Operating power voltage V “L” Supply current “H” Supply current Threshold input current I
Transfer characteristics
*
Switching time measurement circuit
Sig.IN
50
Hysteresis
Response time
Const. Voltage Cir.
RL = 1k
V
Sig.OUT
I
FLH/IFHLVCC
CC
V
F
I
R
I
OH
V
OL CC
I
CCL
I
CCH
FHL
*
t
PHL
*
t
PLH
(Input pulse)
(Output pulse)
IF = 20mA 1.2 1.4 V VR = 3V 10 µA V V
CC
CC
= 5V, V = 5V, I
= 12V, IF = 0mA 100 µA
OH
= 5mA, IF = 2mA 0.15 0.4 V
OL
2.2 7 V
V
= 5V, IF = 2mA 0.8 2 mA
CC
V
= 5V, IF = 0mA 0.8 2 mA
CC
V
= 2.2V 2 mA
CC
= 2.2V 0.85
V
= 5V, IF = 2mA, RL = 1k
CC
t
PHLtPLH
50%
V
OH
1.5V V
OL
t
: H L Propagation time
PHL
: L H Propagation time
t
PLH
3 µs 8 µs
Important Information for Soldering
1. Soldering Position
A : Make sure the distance is 0.1 mm or more.
A
Soldering bath
2. Solder Temperature and Soldering Time Temperature : 260˚C or less Time : within 3 seconds Note) Avoid using reflow soldering methods.
3. Other Issues
1) Soldering should not create excessive thermal or mechanical stress on the case package or leads. Excessive stress may cause changes in the shape or characteristics of the package or leads.
2) Be careful not to allow solder, flux, solvents, etc. to remain on the case package. Doing so may cause problems related to transmission characteristics, etc.
Important Information Related to Power Source Voltage
In order to stabilize the power line, use a decoupling capacitor of approximately 0.1 µF between VCC and the GND line near the device .
2
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