Panasonic CNZ1179 Datasheet
Transmissive Photosensors (Photo Interrupters)
CNZ1179
Photo Interrupter
For contactless SW, object detection
Unit : mm
Overview
CNZ1179 is a photocoupler in which a high efficiency GaAs
infrared light emitting diode is used as the light emitting element,
and a high sensitivity phototransistor is used as the light detecting
element. The two elements are arranged so as to face each other,
and objects passing between them are detected.
Features
Highly precise position detection : 0.3 mm
Wide gap between emitting and detecting elements, suitable for
thick plate detection
Fast response : tr, tf = 6 µs (typ.)
Small output current variation against change in temperature
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC) V
Forward current (DC) I
Power dissipation P
Collector current I
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature T
Symbol
R
F
*1
D
C
V
CEO
V
ECO
*2
P
C
T
opr
stg
Ratings Unit
3V
50 mA
75 mW
20 mA
30 V
5V
100 mW
–25 to +85 ˚C
–30 to +100
˚C
Mark for indicating
LED side
13.0±0.3
5.0±0.2
2.0±0.2
10.0±0.3
7.0 min.
*9.75±0.3 *2.54±0.3
2
1
(Note) * is dimension at the root of leads
*1
Input power derating ratio is
2-R0.5
2-0.45
3
4
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.33 mW/˚C at Ta ≥ 25˚C.
6.2±0.2
0.45±0.1
2.2±0.2
7.2±0.2
23
14
Pin connection
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output
characteristics
Transfer
characteristics
*
Switching time measurement circuit
50Ω R
Forward voltage (DC) VFIF = 50mA 1.2 1.5 V
Reverse current (DC) IRVR = 3V 10 µA
Collector cutoff current I
Collector to emitter capacitance
Collector current ICV
Response time tr , t
Collector to emitter saturation voltage
Sig.IN
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
Symbol
CEOVCE
CCV
*
f
V
CE(sat)IF
t
d
Conditions min typ max Unit
= 10V 200 nA
= 10V, f = 1MHz 5 pF
CE
= 10V, IF = 20mA, RL = 100Ω
CE
V
= 10V, IC = 1mA, RL = 100Ω
CC
0.3 mA
6 µs
= 50mA, IC = 0.1mA 0.3 V
td : Delay time
: Rise time (Time required for the collector current to increase
t
90%
r
from 10% to 90% of its final value)
: Fall time (Time required for the collector current to decrease
t
t
r
t
f
f
from 90% to 10% of its initial value)
1
CNZ1179 Transmissive Photosensors (Photo Interrupters)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
V
— Ta
F
IF = 50mA
(V)
F
1.6
1.2
0.8
10mA
1mA
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
Ta = 25˚C
IF = 30mA
20mA
10mA
10
1
(mA)
C
–1
10
–2
10
Collector current I
–3
10
–1
10
Forward current IF (mA)
160
120
(%)
C
80
I
— I
C
F
VCE = 10V
Ta = 25˚C
V
CE
= 20mA
I
F
2
= 10V
11010
I
— Ta
C
Forward voltage V
0.4
0
– 40 – 20
0 20406080100
Ambient temperature Ta (˚C )
I
10
1
(µA)
–1
10
CEO
–2
10
Dark current I
–3
10
–4
10
CEO
VCE = 24V
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
10V
–1
10
Collector current I
–2
10
–1
10
11010
Collector to emitter voltage VCE (V)
t
— I
r
3
10
2
10
(µs)
r
10
C
RL = 1kΩ
500Ω
Rise time t
V
Sig.IN
1
V
50Ω
–1
10
–2
10
CC
V
1
Sig.
OUT
V
V
1
2
2
R
L
–1
Collector current IC (mA)
VCC = 10V
Ta = 25˚C
t
r
11010
40
Relative output current I
2
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
100
80
(%)
C
60
40
20
90%
10%
t
d
t
f
Relative output current I
0
0
C
12 6543
V
= 10V
CE
Ta = 25˚C
= 20mA
I
F
Criterion
0
d
Distance d (mm)
2
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