Panasonic CNZ3734, CNZ3731, CNC7H501, CNC7C502, CNC7C501 Datasheet

Optoisolators (Photocouplers)

CNZ3731, CNC7C501, CNZ3734
CNC2S501, CNC7C502, CNC7H501

Optoisolators

Overview

The CNZ3731 series of optoisolators consist of a GaAs infrared
LED which is optically coupled with a Si NPN Darlington
phototransistor, and housed in a small DIL package. The series
provides high I/O isolation voltage and high collector/emitter isolation
voltage, as well as a high current transfer ratio (CTR). This opto
isolator series also includes the two-channel CNC7C501 and the four­channel CNZ3734, and A type of these models with increased
collector to emitter breakdown voltage (V

Features

High collector to emitter breakdown voltage : V

A type : V

CEO

> 350 V

High current transfer ratio with Darlington phototransistor output

CTR = 4000% (typ.)

High I/O isolation voltage : V

≥ 5000 V

ISO

Small DIL package for saving mounting space

UL listed (UL File No. E79920)

A-type models have a guaranteed internal insulating distance of 0.4 mm

Applications

Telephones

Telephone exchange

FAX

Programmable controllers

Signal transfer between circuits with different potentials and impedances

Pin Connection

CNZ3731
CNC2S501

1

4

CNZ3734
CNC7H501

CEO

1

> 350V).

CEO

rms

> 300 V,

:

16

CNZ3731/CNC2S501

LED Mark

1
23

4.58±0.3

7.62±0.3

6.2±0.5

2.0

3.85±0.3

0 to 15˚

CNC7C501/CNC7C502

LED Mark

1
2
3

9.66±0.3

4

7.62±0.3

6.2±0.5

2.0

3.85±0.3

0 to 15˚

CNZ3734/CNC7H501

LED Mark

1
2
3
4
5

19.82±0.5

6
7
8

7.62±0.3

6.2±0.5

2.0

3.85±0.3

0 to 15˚

5.2 max.

4

–0

+0.15

0.25

0 to 15˚

5.2 max.

8
7
6
5

–0

+0.15

0.25

0 to 15˚

5.2 max.

16
15
14
13
12
11
10

9

–0

+0.15

0.25

0 to 15˚

2.54 min.0.5 min.

4-0.5±0.1

1: Anode
2: Cathode
3: Emitter
4: Collector

2.54 min.0.5 min.

1,3: Anodee
2,4: Cathode
5,7: Emitter
6,8: Collector

2.54 min.0.5 min.

1,3,5,7:
2,4,6,8:
9,11,13,15:
10,12,14,16:

Unit : mm

4-1.2±0.15

2.54±0.25

Unit : mm

8-0.5±0.1

8-1.2±0.15

2.54±0.25

Unit : mm

16-0.5±0.1

2.54±0.25

16-1.2±0.15

Anode
Cathode
Emitter
Collector

2

CNC7C501
CNC7C502

1

2
3

4

3

Top View

8

7
6

5

Top View

2
3

4
5

6
7

8

15
14

13
12

11
10

9

Top View

1

CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501

Optoisolators (Photocouplers)

Absolute Maximum Ratings (Ta = 25˚C)

Parameter

Reverse voltage (DC)

Input (Light
emitting diode)

Forward current (DC)
Pulse forward current
Power dissipation
Collector current

Output (Photo
transistor)

Collector to emitter voltage
Emitter to collector voltage

Collector power dissipation
Total power dissipation
Isolation voltage, input to output
Operating ambient temperature
Storage temperature

*1

Pulse width ≤ 100 µs, repeat 100 pps

*2

Input power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C.

*3

Output power derating ratio is 3.0 mW/˚C at Ta ≥ 25˚C (CNZ3731, CNC2S501).

Output power derating ratio is 0.75 mW/˚C at Ta ≥ 25˚C (CNC7C501, CNC2S502, CNZ3734, CNC7H501).

*4

AC 1min., RH < 60 %

Symbol

V

R

I

F

*1

I

FP

*2

P

D

I

C

V

CEO

V

ECO

*3

P

C

P

T

*4

V

ISO

T

opr

T

stg

CNZ3731 CNC2S501

66V

50 50 mA

11A

75 75 mW
150 150 mA
300 350 V

0.3 0.3 V
300 150 300 150 mW
320 200 320 200 mW

5000 5000 V

–30 to +100 –30 to +100 ˚C

–55 to +125 –55 to +125 ˚C

CNC7C501

CNZ3734

Ratings

CNC7C502
CNC7H501

Unit

rms

Electrical Characteristics (Ta = 25˚C)

Parameter

Input
characteristics

Reverse current (DC)
Forward voltage (DC)
Capacitance between pins

Output
characteristics

Collector cutoff current
Collector to emitter capacitance
DC current transfer ratio
Isolation capacitance, input to output

Transfer
characteristics

Isolation resistance, input to output
Rise time
Fall time
Collector to emitter saturation voltage

*1

DC current transfer ratio (CTR) is a ratio of output current against DC input current.

I

C

I

F

CTR = × 100 (%)

*2

tr : Time required for the collector current to increase from 10% to 90% of its final value

*3

tf : Time required for the collector current to decrease from 90% to 10% of its initial value

Symbol

Conditions min typ max Unit

IRVR = 3V 10 µA

VFIF = 50mA 1.35 1.5 V

CtVR = 0V, f = 1MHz 30 pF

I

CEOVCE

CCV

= 200V 200 nA
= 10V, f = 1MHz 10 pF

CE

CTR*1VCE = 2V, IF = 1mA 1000 4000 %

C

= 1MHz 0.7 pF

ISOf

R

ISOVISO

*2

t

r

*3

t

f

V

CE(sat)IF

= 500V 10

V

= 10V, IC = 10mA, 40 µs

CC

Rt = 100Ω 15 µs

= 1mA, IC = 2mA 1.0 V

11

Ω

2

Optoisolators (Photocouplers)

CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501

P

— Ta

200

150

(mW)

D

100

50

D

LED Power dissipation P

0
– 30

25 75 1250 50 100

Ambient temperature Ta (˚C )

I

— V

60

50

40

(mA)

F

30

20

F

Forward current I

10

0

0.4 0.8 1.2 1.6 2.42.0

0

Forward voltage VF (V)

F

Ta = 25˚C

P

— Ta

400

(mW)

300

C

200

100

CNC7C501/
CNC7C502
CNZ3734/
CNC7H501

C

CNZ3731
CNC2S501

Collector power dissipation P

0

– 30

25 75 1250 50 100

Ambient temperature Ta (˚C )

I

— V

C

160

Pc(max.)

120

(mA)

C

80

40

Collector current I

0

24 86

0

IF = 5mA

CE

3mA

2mA

1.5mA

Collector to emitter voltage VCE (V)

Ta = 25˚C

1mA

0.5mA

I

— D

10

(mA)

FP

10

10

10

5

4

3

2

FP

R

Pulse width ≤ 100µs
Ta = 25˚C

Allowable pulse forward current I

10

–3

10

–2

10

Duty ratio D

I

— V

3

10

2

10

(mA)

C

10

1

Collector current I

–1

10

0 0.4 0.8 1.2

C

–1

10

CE(sat)

R

Collector saturation voltage V

Ta = 25˚C

IF = 5mA

2mA
1mA

0.5mA

CE(sat)

1

(V)

3

10

2

10

(mA)

C

10

1

Collector current I

–1

10

–1

10

Forward current IF (mA)

I

— I

C

F

VCE = 2V
Ta = 25˚C

DC current transfer ratio CTR (%)

11010

2

6

10

5

10

4

10

3

10

2

10

–1

10

Forward current IF (mA)

CTR — I

11010

F

VCE = 2V
Ta = 25˚C

2

Relative CTR — Ta

120

100

80

60

Relative DC current transfer ratio CTR (%)

40

0 20406080100– 40 – 20

Ambient temperature Ta (˚C )

IF = 1mA

= 2V

V

CE

3

CNZ3731, CNC7C501, CNZ3734, CNC2S501, CNC7C502, CNC7H501

Optoisolators (Photocouplers)

V

1.6

(V)

1.4

CE(sat)

1.2

1.0

0.8

0.6

Collector to emitter saturation voltage V

0.4
– 20

– 40

— Ta

CE(sat)

IF = 1mA

= 2mA

I

C

0 20406080100

Ambient temperature Ta (˚C )

Response time —

External load resistance characteristics

3

10

VCC = 10V

= 10mA

I

C

Ta = 25˚C

2

10

10

Response time (µs)

1

t

r

t

f

t

d

t

s

I

— Ta

10

10

10

(A)

CEO

10

10

–5

–6

–7

–8

–9

CEO

VCE = 200V

Dark current I

–10

10

–11

10

– 40 – 20 0 40 8020 60 100

Ambient temperature Ta (˚C )

Response time measurement circuit

Sig.IN

V

1

50Ω

I

— V

CEO

–8

10

CE

Ta = 25˚C

(A)

CEO

–9

10

Dark current I

–10

10

10 10

–2

10

–3

Collector to emitter voltage VCE (V)

V

CC

V

1

5ms

V

2

t

d

t

R

L

r

90%
10%

t

s

t

f

–1

10

–2

10

–1

10

External load resistance RL (kΩ)

Frequency characteristics

10

0

(dB)

V

– 10

1kΩ

Voltage gain A

– 20

– 30

–1

10

Frequency f (kHz)

4

110

VCE = 4V
Ta = 25˚C
I

= 10mA

C

RL =

10Ω

100Ω

2

10110

3

10

+10V

50kΩ

16V

100µF

Sig.IN

–+

50Ω 5kΩ 50Ω

Measurement circuit of

frequency characteristics

Sig.OUT

R

L

V

CC

= 10mA

C

I

4mAp - p