Panasonic CNC1H001 Technical data

查询CNC1H001供应商

Optoisolators (Photocouplers)

CNC1H001

Optoisolator

■ Features

• Housed in a surface mount package alternative to mini-flat package
of 1.27 mm pitch

• Double molded package

• 2.5 kV isolation voltage

• UL approved (File No. E79920)

Unit: mm

10.3

±0.3

16

9

±0.3

4.4

7.0

■ Applications

• Suited for interface circuits requiring high density mounting of
parts, especially hybrid ICs and programmable controllers

• Signal transfer between circuits with different potentials and with
impedances

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Input (light Reverse voltage (DC) V

emitting diode) Forward current (DC) I

Pulse forward current

2

Power dissipation

*

Output (photo Collector current I

transistor) Collector-emitter voltage V

Emitter-collector voltage V

Collector power dissipation

4

Isolation voltage, input to output

*

Operating ambient temperature T

Storage temperature T

R

F

1

*

I

FP

P

D

C

CEO

ECO

3

*

P

C

V

ISO

opr

stg

Note)*1: Pulse repetition rate = 100 pps. Pulse wide ≤ 100 µs

2: Above 25°C ambient temperature, derate dissipation at the rate of 0.75 mW/°C.

*

3: Above 25°C ambient temperature, derate dissipation at the rate of 1.2 mW/°C.

*

4: AC voltage (t = 1.0 min., RH < 60%)

*

6V

50 mA

1A

75 mW/ch

50 mA

80 V

7V

120 mW/ch

2 500 V[rms]

−30 to +100 °C

−55 to +125 °C

1.27

Pin Connection

16 15

14 13

12

34

81

0.4

2.0

+0.10

±0.1

0.1

1, 3, 5, 7 : Anode
2, 4, 6, 8 : Cathode
9, 11, 13, 15 : Emitter
10, 12, 14, 16: Collector
PCTFG116-001 Package

12 11

56

0.05

-

0.15

0.5

±0.3

10 9

78

Top View

(1.3)

Publication date: May 2002 SHF00006AED

1

CNC1H001

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Input Forward voltage VFIF = 50 mA 1.35 1.5 V

diode Reverse current I

Capacitance CtVR = 0 V, f = 1 MHz 15 pF

Output Collector-emitter dark current I

transistor Collector-emitter voltage V

Emitter-collector voltage V

Collector capacitance CCVCE = 10 V, f = 1 MHz 10 pF

1

Coupled Current transfer ratio

*

Capacitance C

Resistance R

2

Rise time

Fall time

*

3

*

Saturation voltage V

Note)*1: CTR = IC / IF × 100%

2: Rise time is defined as the time required for the IC to rise from 10% to 90% of peak value.

*

3: Fall time is defined as the time required for the IC to decrease from 90% to 10% of peak value.

*

Input and output are practiced by electricity.

The device is designed be disregarded radiation.

VR = 3 V 10 µA

R

CEOVCE

CEOIC

ECOIE

= 20 V 5 100 nA

= 100 µA80V

= 10 µA7V

CTR VCE = 5 V, IF = 5 mA 100 600 %

f = 1 MHz 0.6 pF

ISO

ISOVISO

t

r

t

f

CE(sat)IF

= 500 V 10

VCC = 10 V, IC = 2 mA 4 µs

RL = 100 Ω 3

= 20 mA, IC = 1 mA 0.1 0.2 V

11

Ω

PC , PD  T

160

(mW)

D

, P

C

P

Collector power dissipation , power dissipation

P

C

120

80

P

D

40

0

−20

0 20406080 120100

a

Ambient temperature Ta (°C)

2

60

50

40

(mA)

F

30

20

Forward current I

10

0

0.4 1.61.2 2.42.00.80

Forward voltage VF (V)

SHF00006AED

IF  V

F

Ta = 25°C

2

10

VCC = 5 V

= 25°C

T

a

10

(mA)

C

1

−1

10

Collector current I

−2

10

−1

10

Forward current IF (mA)

IC  I

F

11010

2

CNC1H001

IC  V

50

40

(mA)

C

30

IF = 30 mA

CE

25 mA

20 mA

15 mA

10 mA

20

Collector current I

10

0

024681012

Collector-emitter voltage VCE (V)

tr  I

2

10

10

s)

µ

(

r

1

C

V

CC

= 25°C

T

a

RL = 1 kΩ

500 Ω

100 Ω

5 mA

2 mA
1 mA

= 10 V

180

(%)

140

C

I

∆

∆IC  T

a

100

60

Relative collector current

20

−20 0 40 6020 80 100

Ambient temperature Ta (°C)

tf  I

2

10

10

(µs)

f

1

C

V
T

RL = 1 kΩ

500 Ω

100 Ω

= 10 V

CC

= 25°C

a

I

 T

10

10

(nA)

CEO

10

4

3

2

CEO

a

10

1

−1

10

Collector-emitter dark current I

−2

10

−40 −200 204060

Ambient temperature Ta (°C)

Frequency characteristics

2

10

10

1

VCE = 20 V

10080

Ta = 25°C

Rise time t

Sig. in

−1

10

V

1

50 Ω

−2

10

−1

10

Collector current IC (mA)

V

CC

V

1

2

trt

90%
10%

t

d

f

2

V

2

V

R

L

11010

Fall time t

10

Sig. in

−1

V

1

50 Ω

−2

10

−1

10

Collector current IC (mA)

V

CC

V

1

2

trt

90%
10%

t

d

f

2

V

2

V

R

L

11010

−1

10

Relative power output P (dB)

= 5 mA

F

−2

10

11010210

I

Frequency f (kHz)

2 mA

3

SHF00006AED

3

Caution for Safety

■ Gallium arsenide material (GaAs) is used
in this product.

Therefore, do not burn, destroy, cut, crush, or chemi­cally decompose the product, since gallium arsenide

DANGER

Request for your special attention and precautions in using the technical information

and semiconductors described in this book

(1) An export permit needs to be obtained from the competent authorities of the Japanese Govern-

ment if any of the products or technologies described in this book and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.

(2) The technical information described in this book is limited to showing representative characteristics

and applied circuits examples of the products. It neither warrants non-infringement of intellectual
property right or any other rights owned by our company or a third party, nor grants any license.

(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the

product or technologies as described in this book.

(4) The products described in this book are intended to be used for standard applications or general

electronic equipment (such as office equipment, communications equipment, measuring instru­ments and household appliances).
Consult our sales staff in advance for information on the following applications:

• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.

• Any applications other than the standard applications intended.

(5) The products and product specifications described in this book are subject to change without no-

tice for modification and/or improvement. At the final stage of your design, purchasing, or use of the
products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.

(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum

rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise,
we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.

(7) When using products for which damp-proof packing is required, observe the conditions (including

shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets
are individually exchanged.

(8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written

permission of Matsushita Electric Industrial Co., Ltd.

material in powder or vapor form is harmful to human
health.
Observe the relevant laws and regulations when
disposing of the products. Do not mix them with ordi­nary industrial waste or household refuse when dis­posing of GaAs-containing products.

2002 MAY