Panasonic CNC1H001 Technical data

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Optoisolators (Photocouplers)

CNC1H001

Optoisolator

■ Features

• Housed in a surface mount package alternative to mini-flat package
of 1.27 mm pitch

• Double molded package

• 2.5 kV isolation voltage

• UL approved (File No. E79920)

Unit: mm

10.3

±0.3

16

9

±0.3

4.4

7.0

■ Applications

• Suited for interface circuits requiring high density mounting of
parts, especially hybrid ICs and programmable controllers

• Signal transfer between circuits with different potentials and with
impedances

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Input (light Reverse voltage (DC) V

emitting diode) Forward current (DC) I

Pulse forward current

2

Power dissipation

*

Output (photo Collector current I

transistor) Collector-emitter voltage V

Emitter-collector voltage V

Collector power dissipation

4

Isolation voltage, input to output

*

Operating ambient temperature T

Storage temperature T

R

F

1

*

I

FP

P

D

C

CEO

ECO

3

*

P

C

V

ISO

opr

stg

Note)*1: Pulse repetition rate = 100 pps. Pulse wide ≤ 100 µs

2: Above 25°C ambient temperature, derate dissipation at the rate of 0.75 mW/°C.

*

3: Above 25°C ambient temperature, derate dissipation at the rate of 1.2 mW/°C.

*

4: AC voltage (t = 1.0 min., RH < 60%)

*

6V

50 mA

1A

75 mW/ch

50 mA

80 V

7V

120 mW/ch

2 500 V[rms]

−30 to +100 °C

−55 to +125 °C

1.27

Pin Connection

16 15

14 13

12

34

81

0.4

2.0

+0.10

±0.1

0.1

1, 3, 5, 7 : Anode
2, 4, 6, 8 : Cathode
9, 11, 13, 15 : Emitter
10, 12, 14, 16: Collector
PCTFG116-001 Package

12 11

56

0.05

-

0.15

0.5

±0.3

10 9

78

Top View

(1.3)

Publication date: May 2002 SHF00006AED

1

CNC1H001

■ Electrical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Input Forward voltage VFIF = 50 mA 1.35 1.5 V

diode Reverse current I

Capacitance CtVR = 0 V, f = 1 MHz 15 pF

Output Collector-emitter dark current I

transistor Collector-emitter voltage V

Emitter-collector voltage V

Collector capacitance CCVCE = 10 V, f = 1 MHz 10 pF

1

Coupled Current transfer ratio

*

Capacitance C

Resistance R

2

Rise time

Fall time

*

3

*

Saturation voltage V

Note)*1: CTR = IC / IF × 100%

2: Rise time is defined as the time required for the IC to rise from 10% to 90% of peak value.

*

3: Fall time is defined as the time required for the IC to decrease from 90% to 10% of peak value.

*

Input and output are practiced by electricity.

The device is designed be disregarded radiation.

VR = 3 V 10 µA

R

CEOVCE

CEOIC

ECOIE

= 20 V 5 100 nA

= 100 µA80V

= 10 µA7V

CTR VCE = 5 V, IF = 5 mA 100 600 %

f = 1 MHz 0.6 pF

ISO

ISOVISO

t

r

t

f

CE(sat)IF

= 500 V 10

VCC = 10 V, IC = 2 mA 4 µs

RL = 100 Ω 3

= 20 mA, IC = 1 mA 0.1 0.2 V

11

Ω

PC , PD  T

160

(mW)

D

, P

C

P

Collector power dissipation , power dissipation

P

C

120

80

P

D

40

0

−20

0 20406080 120100

a

Ambient temperature Ta (°C)

2

60

50

40

(mA)

F

30

20

Forward current I

10

0

0.4 1.61.2 2.42.00.80

Forward voltage VF (V)

SHF00006AED

IF  V

F

Ta = 25°C

2

10

VCC = 5 V

= 25°C

T

a

10

(mA)

C

1

−1

10

Collector current I

−2

10

−1

10

Forward current IF (mA)

IC  I

F

11010

2