Panasonic CNB2301 Datasheet
Reflective Photosensors (Photo Reflectors)
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CNB2301
Reflective Photosensor
Overview
CNB2301 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Darlington phototransistor used as the photo
detector in a single resin package.
Features
Ultraminiature : 2.7 × 3.4 mm
Visible light cutoff resin is used
High current-transfer ratio
Applications
Detection of paper, film and cloth Detection of position and edge
Detection of rotary positioning Liquid level sensor
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
*1
P
D
I
C
V
CEO
V
ECO
*2
P
C
T
opr
T
stg
Ratings Unit
3V
50 mA
75 mW
30 mA
20 V
5V
75 mW
–25 to +85 ˚C
–30 to +100
˚C
Mark for indicating
anode side
C0.5
13
Chip
center
0.4
2.7±0.2
4-0.7
4-0.5
±0.1
9.0±1.0 9.0±1.0
1.5±0.2
*1
Input power derating ratio is
2.0±0.2 2.0±0.2
24
1.8
3.4±0.3
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
Unit : mm
0.5
0.15
1432
Pin connection
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals CtVR = 0V, f = 1MHz 30 pF
Output characteristics
Collector cutoff current
Collector current
Transfer
characteristics
Leakage current
Response time
Collector to emitter saturation voltage
*1
IC classifications
Class Q R S
IC (mA) 0.46 to 1.75 1.3 to 4.95 3.15 to 12.0
*3
Time required for the output current to increase from 10% to 90% of its final value
*4
Time required for the output current to decrease from 90% to 10% of its initial value
Symbol
Conditions min typ max Unit
VFIF = 50mA 1.3 1.5 V
IRVR = 3V 0.01 10 µA
I
CEOVCE
*1, *2
I
C
IDV
t
, t
r*3
V
CE(sat)IF
= 10V 1.0 µA
V
= 5V, IF = 2mA, RL = 100Ω, d = 1mm
CC
= 5V, IF = 2mA, RL = 100Ω 2.0 µA
CC
*4
V
= 10V, IC = 1mA, RL = 100Ω 150 µs
f
CC
= 5mA, IC = 0.5mA 1.5 V
0.46 12.0 mA
*2
Output current measurement method
IFI
C
V
CC
R
L
Evaporated Al
Glass plate
(t = 1mm)
1
CNB2301 Reflective Photosensors (Photo Reflectors)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
10
10
(mA)
C
10
3
2
F
V
Ta = 25˚C
RL = 100Ω
d = 1mm
CC
= 5V
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
Ta = 25˚C
IF = 10mA
5mA
2mA
V
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
0
– 40 – 20
F
0 20406080100
Ambient temperature Ta (˚C )
I
160
120
(%)
C
V
CC
= 2mA
I
F
R
L
80
C
= 5V
= 100Ω
— Ta
— Ta
IF = 50mA
10mA
1mA
1
Collector current I
–1
10
1
10 10
Forward current IF (mA)
I
10
10
2
VCE = 10V
CEO
(µA)
CEO
1
–1
Dark current I
10
–2
10
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
— I
C
1mA
VCC = 10V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
40
Relative output current I
100
(%)
C
0
80
60
40
2
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
= 5V
V
CC
IF = 2mA
d
–1
10
Collector current I
–2
2
10
10
3
–1
10
11010
Collector to emitter voltage VCE (V)
t
4
10
3
10
(µs)
r
2
10
r
Rise time t
10
1
–2
10
–1
Collector current IC (mA)
11010
20
Relative output current I
0
2 46 108
0
Distance d (mm)
2
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