Panasonic CNB2001 Datasheet
Reflective Photosensors (Photo Reflectors)
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CNB2001
Reflective Photosensor
Overview
CNB2001 is a small, thin SMD-compatible reflective photosensor
consisting of a high efficiency GaAs infrared light emitting diode
which is integrated with a high sensitivity Darlington phototransistor
in a single resin package.
Features
Reflow-compatible reflective photosensor
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
High current-transfer ratio
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
*1
P
D
I
C
V
CEO
V
ECO
*2
P
C
T
opr
T
stg
Ratings Unit
6V
50 mA
75 mW
30 mA
35 V
6V
75 mW
–25 to +85 ˚C
–40 to +100
˚C
3.4
1.8
13
0.35
2.7
4.3±0.3
24
4-0.7 4-0.5
(Note) Tolerance unless otherwise specified is ±0.2
*1
Input power derating ratio is
0.05
C0.5
Chip
center
0.85
1432
Pin connection
Color of rank
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
Unit : mm
0.15
+0.1
–0.05
1.5
1: Anode
2: Cathode
3: Emitter
4: Collector
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Forward voltage (DC)
Reverse current (DC)
Collector cutoff current
Collector current
Transfer
characteristics
Leakage current
Collector to emitter saturation voltage
Response time
*1
Output Current (IC) measurement
method (see figure below.) circuit (see figure below.)
Glass plate
Evaporated Al
d = 1mm
I
F
Input and output are handled electrically.
This product is not designed to withstand radiation.
I
C
R
L
Sig.IN
V
CC
Symbol
VFIF = 20mA 1.2 1.4 V
IRVR = 3V 10 µA
I
CEOVCE
*1
I
C
IDV
V
CE(sat)IF
*2
t
r
*2
t
*2
50Ω
f
Response time measurement
R
L
= 10V 1.0 µA
V
= 2V, IF = 4mA, RL = 100Ω, d = 1mm
CC
= 2V, IF = 4mA, RL = 100Ω 5.0 µA
CC
= 4mA, IC = 0.5mA 1.2 V
V
= 2V, IC = 10mA, 120
CC
RL = 100Ω 115
Glass plate
Evaporated Al
d = 1mm
V
Sig.
OUT
Conditions min typ max Unit
0.52 15.0 mA
tr : Rise time
: Fall time
t
f
Sig.IN
Sig.OUT
CC
t
t
r
f
Color indication of classifications
Class IC (µA) Color
Q 0.52 to 1.94 Orange
R 1.45 to 5.4 White
90%
10%
S 4.0 to 15.0
µs
Light blue
1
CNB2001 Reflective Photosensors (Photo Reflectors)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
V
— Ta
F
IF = 50mA
(V)
F
1.6
1.2
0.8
10mA
1mA
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
I
I
F
C
— V
— V
F
CE
IF = 10mA
4mA
Ta = 25˚C
Ta = 25˚C
d = 1mm
2mA
1mA
3
10
2
10
(mA)
C
10
1
Collector current I
–1
10
1
Forward current IF (mA)
160
120
(%)
C
80
I
— I
C
10 10
I
— Ta
C
F
V
CC
Ta = 25˚C
d = 1mm
= 100Ω
R
L
2
V
CC
= 4mA
I
F
= 100Ω
R
L
= 5V
= 2V
3
10
Forward voltage V
0.4
0
– 40 – 20
0 20406080100
Ambient temperature Ta (˚C )
I
3
10
2
10
(µA)
10
CEO
1
Dark current I
–1
10
–2
10
CEO
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
VCE = 10V
–1
10
Collector current I
–2
10
–1
10
11010
Collector to emitter voltage VCE (V)
tr , t
— I
5
10
4
10
(µs)
f
, t
r
3
10
2
10
Rise time , fall time t
10
–2
10
f
–1
11010
Collector current IC (mA)
C
VCC = 2V
Ta = 25˚C
: t
: t
RL = 1kΩ
500Ω
100Ω
Relative output current I
2
100
r
f
(%)
C
Relative output current I
40
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
80
60
40
20
0
2 46 108
0
Distance d (mm)
= 2V
V
CC
Ta = 25˚C
= 4mA
I
F
d
2
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