Panasonic CNB1303 Datasheet
Reflective Photosensors (Photo Reflectors)
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CNB1303
Reflective Photosensor
Overview
CNB1303 is a small, thin reflective photosensor consisting of a
high efficiency GaAs infrared light emitting diode which is integrated
with a high sensitivity Si phototransistor in a single resin package.
Features
Ultraminiature, thin type : 2.7 × 3.4 mm (height : 1.5 mm)
Visible light cutoff resin is used
Fast response : tr, tf = 20µs (typ.)
Easy interface for control circuit
Applications
Control of motor and other rotary units
Detection of position and edge
Detection of paper, film and cloth
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector current
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
R
I
F
*1
P
D
I
C
V
CEO
V
ECO
*2
P
C
T
opr
T
stg
Ratings Unit
3V
50 mA
75 mW
20 mA
30 V
5V
50 mW
–25 to +85 ˚C
–30 to +100
˚C
Mark for indicating
emitter side
C0.5
13
Chip
center
0.4
2.7±0.2
4-0.7
4-0.5
±0.1
9.0±1.0 9.0±1.0
1.5±0.2
*1
Input power derating ratio is
2.0±0.2 2.0±0.2
24
1.8
3.4±0.3
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
0.67 mW/˚C at Ta ≥ 25˚C.
Unit : mm
0.5
0.15
3214
Pin connection
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Forward voltage (DC)
Reverse current (DC)
Capacitance between terminals CtVR = 0V, f = 1MHz 30 pF
Output characteristics
Collector cutoff current
Collector current
Transfer
characteristics
Leakage current
Response time
Collector to emitter saturation voltage
*1
IC classifications
Class Q R S
IC (µA) 90 to 220 180 to 440 360 to 880
*3
Time required for the output current to increase from 10% to 90% of its final value
*4
Time required for the output current to decrease from 90% to 10% of its initial value
Symbol
Conditions min typ max Unit
VFIF = 50mA 1.3 1.5 V
IRVR = 3V 0.01 10 µA
I
CEOVCE
*1, *2
I
C
IDV
t
, t
r*3
V
CE(sat)IF
= 10V 200 nA
V
= 5V, IF = 10mA, RL = 100Ω, d = 1mm
CC
= 5V, IF = 10mA, RL = 100Ω 200 nA
CC
*4
V
= 5V, IC = 0.1mA, RL = 100Ω 20 µs
f
CC
= 20mA, IC = 0.1mA 0.4 V
90 880 µA
*2
Output current measurement method
I
F
V
CC
Evaporated Al
Glass plate
(t = 1mm)
R
I
C
L
1
CNB1303 Reflective Photosensors (Photo Reflectors)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
800
600
(µA)
C
400
F
V
Ta = 25˚C
R
d = 1mm
= 5V
CC
= 100Ω
L
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
600
d = 1mm
Ta = 25˚C
500
400
(mA)
C
300
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
IF = 20mA
15mA
V
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
160
120
(%)
C
0
– 40 – 20
80
0 20406080100
Ambient temperature Ta (˚C )
I
C
— Ta
F
— Ta
IF = 50mA
10mA
1mA
V
= 5V
CC
= 10mA
I
F
= 100Ω
R
L
200
Collector current I
0
0
81624
Forward current IF (mA)
I
10
1
(µA)
–1
10
CEO
–2
10
Dark current I
–3
10
–4
10
CEO
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
VCE = 10V
200
Collector current I
100
0
0
2
468
Collector to emitter voltage VCE (V)
tr , t
— I
3
10
2
10
(µs)
f
, t
r
10
1
Rise time , fall time t
–1
10
–2
10
f
–1
Collector current IC (mA)
C
11010
10mA
8mA
6mA
4mA
2mA
V
= 5V
CC
Ta = 25˚C
: t
: t
RL = 2kΩ
1kΩ
100Ω
Relative output current I
100
r
f
(%)
C
Relative output current I
40
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
80
60
40
20
0
2 46 108
0
Distance d (mm)
= 5V
V
CC
Ta = 25˚C
= 10mA
I
F
d
2
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