Panasonic CNB1009 Datasheet
Reflective Photosensors (Photo Reflectors)
CNB1009
Reflective Photosensor
Overview
CNB1009 is a photosensor detecting the change of reflective light
in which a high efficiency GaAs infrared light emitting diode is used
as the light emitting element, and a high sensitivity Si phototransistor
is used as the light detecting element. The two elements are located
parallel in the same direction and objects are detected when passing
in front of the device.
Features
Fast response : tr, tf = 6 µs (typ.)
Small size, light weight
Applications
Detection of paper, film and cloth Optical mark reading
Detection of coin and bill Detection of position and edge
Start, end mark detection of magnetic tape
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC)
Forward current (DC)
Power dissipation
Collector to emitter voltage
Emitter to collector voltage
Collector current
Collector power dissipation
Operating ambient temperature
Storage temperature T
Symbol
V
R
I
F
*1
P
D
V
CEO
V
ECO
I
C
*2
P
C
T
opr
stg
Ratings Unit
3V
50 mA
75 mW
20 V
5V
30 mA
100 mW
–25 to +85 ˚C
–30 to +100
˚C
12.0±0.3
2-ø2.3
(4.0)
4.0±0.2
LED
6.5±0.3
1.0
1.0
7.4±0.2
9.5±0.32.5 min.
(2.54)
(Note) ( ) Dimension is reference
*1
Input power derating ratio is
T.R
(1.0)
1.0
19.0±0.3
2-9.5±0.2
(15.5)
2
14
ø2.2
3
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.34 mW/˚C at Ta ≥ 25˚C.
Unit : mm
1432
Pin connection
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Transfer
characteristics
*1
Transfer characteristics measurement circuit
(Ambient light is shut off completely)
I
F
Forward voltage (DC)
Reverse current (DC)
Capacitance between pins
Collector cutoff current
Collector to emitter capacitance
Collector current
Response time
Collector to emitter saturation voltage
V
CC
I
C
R
L
Standard white paper (Reflective ratio 90%)
Symbol
Conditions min typ max Unit
VFIF = 50mA 1.2 1.5 V
IRVR = 3V 10 µA
CtVR = 0V, f = 1MHz 50 pF
I
CEOVCE
CCV
*1
I
C
t
, t
r*2
V
CE(sat)IF
d = 5 mm
= 10V 0.2 µA
= 10V, f= 1MHz 5 pF
CE
V
= 10V, IF = 20mA, RL = 100Ω
CC
*3
V
= 10V, IC = 1mA, RL = 100Ω 6 µs
f
CC
100 500 µA
= 50mA, IC = 0.1mA 0.3 V
*2
Time required for the collector current to increase from
10% to 90% of its final value.
*3
Time required for the collector
current to decrease from 90%
to 10% of its initial value.
t
r
90%
10%
t
f
1
Reflective Photosensors (Photo Reflectors) CNB1009
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
10
10
(mA)
C
2
1
F
VCC = 5V
Ta = 25˚C
R
= 100Ω
L
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
I
I
F
C
— V
— V
F
CE
IF = 30mA
20mA
10mA
Ta = 25˚C
Ta = 25˚C
V
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
160
120
(%)
C
0
– 40 – 20
80
0 20406080100
Ambient temperature Ta (˚C )
I
C
— Ta
F
— Ta
IF = 50mA
10mA
1mA
V
= 10V
CC
= 20mA
I
F
= 100Ω
R
L
–1
10
Collector current I
–2
10
–1
10
11010
Forward current IF (mA)
I
10
1
CEO
(µA)
CEO
–1
10
–2
Dark current I
10
–3
10
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
VCE = 10V
10
Collector current I
10
2
10
10
(µs)
r
Rise time t
10
–1
–2
–1
10
11010
Collector to emitter voltage VCE (V)
t
— I
r
3
2
10
1
–1
–2
10
C
VCC = 10V
Ta = 25˚C
RL = 1kΩ
–1
11010
Collector current IC (mA)
500Ω
100Ω
40
Relative output current I
2
0
800
600
(µA)
C
400
200
Collector current I
0
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
V
= 10V
CC
Ta = 25˚C
RL = 100Ω
IF = 20mA
416128
Distance d (mm)
d
2
Loading...