Transmissive Photosensors (Photo Interrupters)
more than 1mm
Soldering bath
CNA1312K
Photo Interrupter
For contactless SW, object detection
Overview
CNA1312K is an ultraminiature, highly reliable transmissive
photosensor in which a high efficiency GaAs infrared light emitting
diode chip and a high sensitivity Si phototransistor chip are integrated
in a double molded resin package.
Features
Ultraminiature : 2.6 × 4.9 mm (height : 3.3 mm)
Highly precise position detection : 0.1 mm
Gap width : 2.0 mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Input (Light
emitting diode)
Reverse voltage (DC) V
Forward current (DC) I
Power dissipation P
Collector current I
Output (Photo
transistor)
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Temperature Storage temperature T
Soldering temperature T
Symbol
R
F
*1
D
C
V
CEO
V
ECO
*2
P
C
T
opr
stg
*3
sol
Ratings Unit
6V
50 mA
75 mW
20 mA
35 V
6V
75 mW
–25 to +85 ˚C
–40 to +100
˚C
260 ˚C
b side
4.9±0.3
A'AB'
*3.9
(0.15)
(1.5)
B
2-0.2
2-0.4
3: Collecter
4: Emitter
a side
(1.8)
1.45 2.0±0.3 1.45
2.3
3.3
5.0 min.
13
24
1: Anode
2: Cathode
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
*1
Input power derating ratio is
Slit width(0.4)
With gate
a side
or b side
Optical
center
2.6
(C0.5)
(0.9)
+0.2
–0.1
*2.0
1.0 max.
Not soldered
24
13
Pin connection
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.0 mW/˚C at Ta ≥ 25˚C.
*3
Soldering time is within 5 seconds.
1.5
SEC. A-A'
1.5
(0.45)
SEC. B-B'
Unit : mm
Slit width
(0.2)
2-0.5
(0.45)
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Transfer
characteristics
*
Switching time measurement circuit
50Ω R
Forward voltage (DC) VFIF = 20mA 1.2 1.4 V
Reverse current (DC) IRVR = 3V 10 µA
Collector cutoff current I
Collector current ICV
Collector to emitter saturation voltage
Response time tr , t
Sig.IN
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
Symbol
CEOVCE
V
CE(sat)IF
*
f
t
d
Conditions min typ max Unit
= 20V 100 nA
= 5V, IF = 5mA 40 400 µA
CE
= 10mA, IC = 40µA 0.4 V
V
= 5V, IC = 0.1mA, RL = 1000Ω
CC
td : Delay time
: Rise time (Time required for the collector current to increase
t
90%
r
from 10% to 90% of its final value)
: Fall time (Time required for the collector current to decrease
t
t
r
t
f
f
from 90% to 10% of its initial value)
50 µs
1
Transmissive Photosensors (Photo Interrupters) CNA1312K
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
V
— Ta
F
IF = 50mA
(V)
F
1.6
1.2
0.8
10mA
1mA
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
3
2
(mA)
C
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
Ta = 25˚C
IF = 20mA
5
4
(mA)
C
3
2
Collector current I
1
0
5 10152025
0
Forward current IF (mA)
120
100
(%)
C
80
60
I
I
C
— I
C
— Ta
F
= 5V
V
CE
Ta = 25˚C
V
= 5V
CE
= 5mA
I
F
Forward voltage V
0.4
0
– 40 – 20
0 20406080100
Ambient temperature Ta (˚C )
I
1
VCE = 20V
–1
10
(µA)
–2
10
CEO
–3
10
Dark current I
–4
10
–5
10
CEO
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
1
Collector current I
0
1234 65
0
Collector to emitter voltage VCE (V)
t
— I
r
3
10
2
10
(µs)
r
10
C
Rise time t
V
Sig.IN
Sig.
50Ω
CC
Sig.
OUT
R
L
–1
10
1
OUT
–1
10
–2
10
Collector current IC (mA)
15mA
10mA
5mA
2mA
40
Relative output current I
20
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
t
— I
3
= 5V VCC = 5V
V
CC
RL = 2kΩ
1kΩ
100Ω
10
2
10
(µs)
f
10
f
Fall time t
V
Sig.IN
90%
10%
t
d
t
t
r
f
110
1
OUT
–1
10
–2
Sig.
50Ω
CC
Sig.
OUT
R
L
–1
10
Collector current IC (mA)
C
t
r
11010
RL = 2kΩ
1kΩ
100Ω
t
d
t
90%
10%
f
2