Panasonic CNA1312K Datasheet

Transmissive Photosensors (Photo Interrupters)
more than 1mm
Soldering bath
CNA1312K
Photo Interrupter
For contactless SW, object detection
Overview
CNA1312K is an ultraminiature, highly reliable transmissive photosensor in which a high efficiency GaAs infrared light emitting diode chip and a high sensitivity Si phototransistor chip are integrated in a double molded resin package.
Features
Ultraminiature : 2.6 × 4.9 mm (height : 3.3 mm) Highly precise position detection : 0.1 mm Gap width : 2.0 mm
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Input (Light emitting diode)
Reverse voltage (DC) V Forward current (DC) I Power dissipation P Collector current I
Output (Photo transistor)
Collector to emitter voltage Emitter to collector voltage Collector power dissipation Operating ambient temperature
Temperature Storage temperature T
Soldering temperature T
Symbol
R
F
*1
D
C
V
CEO
V
ECO
*2
P
C
T
opr
stg
*3
sol
Ratings Unit
6V 50 mA 75 mW 20 mA 35 V
6V 75 mW
–25 to +85 ˚C
–40 to +100
˚C
260 ˚C
b side
4.9±0.3
A'AB'
*3.9
(0.15)
(1.5)
B
2-0.2
2-0.4
3: Collecter 4: Emitter
a side
(1.8)
1.45 2.0±0.3 1.45
2.3
3.3
5.0 min.
13
24
1: Anode 2: Cathode
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. * is dimension at the root of leads
*1
Input power derating ratio is
Slit width(0.4)
With gate
a side
or b side
Optical center
(C0.5)
(0.9)
+0.2 –0.1
*2.0
1.0 max.
Not soldered
24
13
Pin connection
1.0 mW/˚C at Ta 25˚C.
*2
Output power derating ratio is
1.0 mW/˚C at Ta 25˚C.
*3
Soldering time is within 5 seconds.
1.5
SEC. A-A'
1.5
(0.45)
SEC. B-B'
Unit : mm
Slit width
(0.2)
2-0.5
(0.45)
Electrical Characteristics (Ta = 25˚C)
Parameter
Input characteristics
Output characteristics
Transfer characteristics
*
Switching time measurement circuit
50 R
Forward voltage (DC) VFIF = 20mA 1.2 1.4 V Reverse current (DC) IRVR = 3V 10 µA Collector cutoff current I Collector current ICV Collector to emitter saturation voltage Response time tr , t
Sig.IN
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
Symbol
CEOVCE
V
CE(sat)IF
*
f
t
d
Conditions min typ max Unit
= 20V 100 nA
= 5V, IF = 5mA 40 400 µA
CE
= 10mA, IC = 40µA 0.4 V
V
= 5V, IC = 0.1mA, RL = 1000
CC
td : Delay time
: Rise time (Time required for the collector current to increase
t
90%
r
from 10% to 90% of its final value)
: Fall time (Time required for the collector current to decrease
t
t
r
t
f
f
from 90% to 10% of its initial value)
50 µs
1
Transmissive Photosensors (Photo Interrupters) CNA1312K
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
V
— Ta
F
IF = 50mA
(V)
F
1.6
1.2
0.8
10mA
1mA
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
3
2
(mA)
C
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
Ta = 25˚C
IF = 20mA
5
4
(mA)
C
3
2
Collector current I
1
0
5 10152025
0
Forward current IF (mA)
120
100
(%)
C
80
60
I
I
C
— I
C
— Ta
F
= 5V
V
CE
Ta = 25˚C
V
= 5V
CE
= 5mA
I
F
Forward voltage V
0.4
0 – 40 – 20
0 20406080100
Ambient temperature Ta (˚C )
I
1
VCE = 20V
–1
10
(µA)
–2
10
CEO
–3
10
Dark current I
–4
10
–5
10
CEO
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
1
Collector current I
0
1234 65
0
Collector to emitter voltage VCE (V)
t
— I
r
3
10
2
10
(µs)
r
10
C
Rise time t
V
Sig.IN
Sig.
50
CC
Sig. OUT
R
L
–1
10
1
OUT
–1
10
–2
10
Collector current IC (mA)
15mA
10mA
5mA
2mA
40
Relative output current I
20
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
t
— I
3
= 5V VCC = 5V
V
CC
RL = 2k 1k
100
10
2
10
(µs)
f
10
f
Fall time t
V
Sig.IN
90% 10%
t
d
t
t
r
f
110
1
OUT
–1
10
–2
Sig.
50
CC
Sig. OUT
R
L
–1
10
Collector current IC (mA)
C
t
r
11010
RL = 2k 1k
100
t
d
t
90% 10%
f
2
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