Panasonic CNZ1021, CNZ1023, CNA1009H Technical data

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Transmissive Photosensors (Photo lnterrupters)

CNZ1021 (ON1021), CNZ1023 (ON1023),
CNA1009H (ON1024)

Photo lnterrupter

For contactless SW, object detection

■ Overview

CNZ1021, CNZ1023 and CNA1009H are a transmis­sive photosensor in which a high efficiency GaAs infra­red light emitting diode is used as the light emitting ele­ment, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are ar­ranged so as to face each other, and objects passing be-

tween them are detected.

■ Features

• Highly precise position detection: 0.25 mm

• Gap width: 3 mm (CNZ1021, CNZ1023)

5 mm (CNA1009H)

• The type directly attached to PCB ....... CNZ1021

Screw-fastened type (one side) ............ CNZ1023

The type directly attached to PCB ....... CNA1009H

(with a positioning pins)

CNZ1023 Unit: mmCNZ1021 Unit: mm

Σ

12.0

3.0±0.15

A

(2.5)

10.0

A'

2.5

10.0 min.

(2-0.45) (2-0.45)

(7.6) (2.54)

23

0.4±0.1

Device

center

5.0

(C1.2)

2.1±0.15

SEC. A-A'

1: Anode
2: Cathode

14

3: Collector
4: Emitter

PISTR104-001 Package

CNA1009H Unit: mm

Σ

(2.5)2.5

10.0

10.0 min.

±0.1

5.2

14.0

5.0

±0.15

A

A'

2-0.7

(10.0)

23

(2-0.45)

Device

center

6.0

5.0

0.5

±0.1

SEC. A-A'

(C1)

2.2±0.15

2-φ0.7

(2-0.45)

(2.54)

±0.1

1: Anode
2: Cathode

14

2.35

±0.1

6.6

±0.1

3: Collector
4: Emitter

PISTR104-004 Package

(Note) 1. Tolerance unless otherwise specified is ±0.3

2. ( ) Dimension is reference

Note) The part numbers in the parenthesis show conventional part number.

Σ

2.0

12.0

3.0

±0.15

A

(2.5)

10.0

A'

2.5

10.0 min.
(2-0.45)

(7.6) (2.54)

23

14

Device

center

0.4

(4-R2)

+0.15

φ3.0

-

0

18.0

12.0±0.15

5.0

±0.1

2.1±0.15

SEC. A-A'

PISTR104-003 Package

3.5

(2-0.45)

(C1.2)

2-R1.5

0.5

6.0

0

+0.15

-

3.0

1: Anode
2: Cathode
3: Collector
4: Emitter

Publication date: April 2004 SHG00017BED

1

CNZ1021, CNZ1023, CNA1009H

■ Absolute Maximum Ratings Ta = 25°C

Parameter Symbol Rating Unit

Input (Light Reverse

emitting diode) voltage

CNZ1021 V

R

CNZ1023 3

CNA1009H 5

Forward current I

1

Power dissipation

*

Output (Photo Collector-emitter voltage V

P

CEO

F

D

transistor) (Base open)

Emitter-collector voltage V

ECO

(Base open)

Temperature

Collector current I

Collector power dissipation

Operating ambient temperature

Storage temperature T

C

2

*

P

C

T

opr

stg

Note)*1: Input power derating ratio is 1.0 mW/°C at Ta ≥ 25°C.

2: Output power derating ratio is 1.33 mW/°C at Ta ≥ 25°C.

*

■ Electrical-Optical Characteristics Ta = 25°C ± 3°C

Parameter Symbol Conditions Min Typ Max Unit

Input

characteristics

Output
characteristics

Transfer

characteristics

Note) 1. Input and output are practiced by electricity.

Forward voltage VFIF = 20 mA 1.25 1.40 V

Reverse current I

Collector-emitter cutoff current

R

I

CEO

(Base open)

Collector current I

Collector-emitter saturation voltage

Rise time

Fall time

*

*

C

V

CE(sat)IF

t

r

t

f

2. This device is designed be disregarded radiation.

3.*: Switching time measurement circuit

Sig. in

50 Ω R

V

CC

L

Sig. out

(Input pulse)

(Output pulse)

3V

50 mA

75 mW

30 V

5V

20 mA

100 mW

−25 to +85 °C

−40 to +100 °C

VR = 3 V 10 µA

VCE = 10 V 10 200 nA

VCC = 5 V, IF = 20 mA, RL = 100 Ω 0.5 15.0 mA

= 40 mA, IC = 1 mA 0.4 V

VCC = 5 V, IC = 1 mA 5 µs

RL = 100 Ω 5 µs

t

r

t

: Rise time

r

: Fall time

t

90%

f

10%

t

f

2

SHG00017BED