Panasonic CNA1006N Datasheet
Transmissive Photosensors (Photo Interrupters)
CNA1006N
Photo Interrupter
For contactless SW, object detection
Overview
CNA1006N is a transmissive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Features
Highly precise position detection : 0.3 mm
Gap width : 3 mm
The type direetly attached to PCB (with positioning pins and
fixing hooks)
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC) V
Forward current (DC) I
Power dissipation P
Collector current I
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature T
Symbol
R
F
*1
D
C
V
CEO
V
ECO
*2
P
C
T
opr
stg
Ratings Unit
3V
50 mA
75 mW
20 mA
30 V
5V
100 mW
–25 to +85 ˚C
– 30 to +100
˚C
6.5
5.0
6.03.5±0.5
1.5
+0
2-ø1.0
–0.05
2.0±0.1
(Note)
1. Tolerance unless otherwise specified is ±0.2
2. ( ) Dimension is reference
3. Fitting strength is 2N min. (Static load)
*1
Input power derating ratio is
2.5
16.6
11.8
3.0
4-0.45
(7.6)
15.0
12.6±0.3
23
14
1.5
+0.2
–0.3
A
A'
Optical
center
1.6
(3.8)
3.5
2-1.5
23
14
1: Anode
2: Cathode
2.0±0.1
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.33 mW/˚C at Ta ≥ 25˚C.
Unit : mm
Slit width
1.5±0.1
0.5±0.1
SEC A-A'
(2.54)
2-3.3
Pin connection
3: Collecter
4: Emitter
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Transfer
characteristics
*
Switching time measurement circuit
50Ω R
Forward voltage (DC) VFIF = 20mA 1.25 1.4 V
Reverse current (DC) IRVR = 3V 10 µA
Collector cutoff current I
Collector current ICV
Collector to emitter saturation voltage
Response time tr , t
Sig.IN
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
Symbol
CEOVCE
V
CE(sat)IF
*
f
t
d
Conditions min typ max Unit
= 10V 10 200 nA
= 5V, IF = 20mA 0.7 14 mA
CE
= 40mA, IC = 1mA 0.4 V
V
= 5V, IC = 1mA, RL = 100Ω
CC
90%
t
r
t
f
td : Delay time
: Rise time (Time required for the collector current to increase
t
r
from 10% to 90% of its final value)
: Fall time (Time required for the collector current to decrease
t
f
from 90% to 10% of its initial value)
5 µs
1
CNA1006N Transmissive Photosensors (Photo Interrupters)
IF , I
— Ta
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
I
— I
C
10
10
(mA)
C
2
1
F
VCE = 5V
Ta = 25˚C
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
Ta = 25˚C
IF = 30mA
20mA
10mA
V
1.6
1.2
(V)
F
0.8
Forward voltage V
0.4
160
120
(%)
C
0
– 40 – 20
80
0 20406080100
Ambient temperature Ta (˚C )
I
C
— Ta
F
— Ta
IF = 50mA
10mA
1mA
= 5V
V
CE
= 20mA
I
F
–1
10
Collector current I
–2
10
–1
10
11010
Forward current IF (mA)
I
3
10
2
10
(nA)
10
CEO
1
Dark current I
–1
10
–2
10
CEO
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
VCE = 10V
10
Collector current I
10
2
10
(µs)
r
Rise time t
10
10
–1
–2
–1
10
11010
Collector to emitter voltage VCE (V)
t
— I
r
2
10
1
–1
–2
Sig.IN
Sig.
OUT
50Ω
–1
10
C
VCC = 5V
Ta = 25˚C
RL = 1kΩ
500Ω
100Ω
V
CC
Sig.
OUT
t
d
R
L
t
r
11010
Collector current IC (mA)
t
90%
10%
f
40
Relative output current I
2
2
0
100
80
(%)
C
60
40
20
Relative output current I
0
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
I
— d
C
V
= 5V
CE
Ta = 25˚C
= 20mA
I
F
Criterion
0
d
12 6543
Distance d (mm)
2
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