Panasonic CNA1003H Datasheet
Transmissive Photosensors (Photo Interrupters)
CNA1003H
Photo Interrupter
For contactless SW, object detection
Mark for indicating
LED side
A
Unit : mm
0.5±0.1
Outline
CNA1003H is a transmittive photosensor in which a high
efficiency GaAs infrared light emitting diode is used as the light
emitting element, and a high sensitivity phototransistor is used as
the light detecting element. The two elements are arranged so as to
face each other, and objects passing between them are detected.
Features
Highly precise position detection : 0.3 mm
Gap width : 5 mm
With printed wiring board (PWB) positioning pins
Absolute Maximum Ratings (Ta = 25˚C)
Input (Light
emitting diode)
Output (Photo
transistor)
Temperature
Parameter
Reverse voltage (DC) V
Forward current (DC) I
Power dissipation P
Collector current I
Collector to emitter voltage
Emitter to collector voltage
Collector power dissipation
Operating ambient temperature
Storage temperature T
Symbol
R
F
*1
D
C
V
CEO
V
ECO
*2
P
C
T
opr
stg
Ratings Unit
3V
50 mA
75 mW
20 mA
30 V
5V
100 mW
–25 to +85 ˚C
– 40 to +100
˚C
A'
14.0
5.0±0.15 6.0
10.0
(2-0.45) (2-0.45)
2.5
(10.0) (2.54)
7.0 min.
2.35±0.1
2
3
4
1
6.6±0.1
(Note)
1. Tolerance unless otherwise specified is ±0.3
2. ( ) Dimension is reference
*1
Input power derating ratio is
2.2±0.15
SEC. A-A'
C1.0
Optical
center
(7.5)
2-ø0.7±0.1
0.7
23
14
Pin connection
1: Anode
5.2±0.1
2: Cathode
1.0 mW/˚C at Ta ≥ 25˚C.
*2
Output power derating ratio is
1.33 mW/˚C at Ta ≥ 25˚C.
3: Collecter
4: Emitter
Electrical Characteristics (Ta = 25˚C)
Parameter
Input
characteristics
Output characteristics
Transfer
characteristics
*
Switching time measurement circuit
50Ω R
Forward voltage (DC) VFIF = 20mA 1.25 1.4 V
Reverse current (DC) IRVR = 3V 10 µA
Collector cutoff current I
Collector current ICV
Collector to emitter saturation voltage
Response time tr , t
Sig.IN
V
CC
Sig.OUT 10%
L
(Input pulse)
(Output pulse)
Symbol
CEOVCE
V
CE(sat)IF
*
f
t
d
Conditions min typ max Unit
= 10V 10 200 nA
= 5V, IF = 20mA 0.5 15 mA
CE
= 40mA, IC = 1mA 0.4 V
V
= 5V, IC = 1mA, RL = 100Ω
CC
90%
t
r
t
f
td : Delay time
: Rise time (Time required for the collector current to increase
t
r
from 10% to 90% of its final value)
: Fall time (Time required for the collector current to decrease
t
f
from 90% to 10% of its initial value)
5 µs
1
Transmissive Photosensors (Photo Interrupters) CNA1003H
— Ta
IF , I
60
(mA)
C
50
, I
F
40
30
20
10
Forward current, collector current I
0
0 20406080100
– 25
C
I
F
I
C
Ambient temperature Ta (˚C )
— Ta
V
F
IF = 50mA
(V)
F
1.6
1.2
0.8
10mA
1mA
60
50
40
(mA)
F
30
20
Forward current I
10
0
0.4 0.8 1.2 1.6 2.42.0
0
Forward voltage VF (V)
2
10
10
(mA)
C
1
I
I
F
C
— V
— V
F
CE
Ta = 25˚C
Ta = 25˚C
IF = 30mA
20mA
10mA
2
10
10
(mA)
C
1
–1
10
Collector current I
–2
10
–1
10
Forward current IF (mA)
160
120
(%)
C
80
— I
I
C
F
VCE = 5V
Ta = 25˚C
V
CE
= 20mA
I
F
2
= 5V
11010
— Ta
I
C
Forward voltage V
0.4
0
– 40 – 20
0 20406080100
Ambient temperature Ta (˚C )
I
3
10
2
10
(nA)
10
CEO
1
Dark current I
–1
10
–2
10
CEO
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— Ta
VCE = 10V
–1
10
Collector current I
–2
10
–1
10
11010
Collector to emitter voltage VCE (V)
— I
t
r
2
10
10
(µs)
r
1
C
R
= 1kΩ
L
500Ω
Rise time t
V
–1
10
–2
10
Sig.IN
CC
Sig.
OUT
50Ω
–1
10
Sig.
OUT
R
L
11010
Collector current IC (mA)
VCC = 5V
Ta = 25˚C
100Ω
t
r
40
Relative output current I
2
0
0 20406080100– 40 – 20
Ambient temperature Ta (˚C )
— d
I
100
80
(%)
C
60
40
20
90%
10%
t
d
t
f
Relative output current I
2
0
0
C
12 6543
V
CE
Ta = 25˚C
= 20mA
I
F
Criterion
= 5V
0
d
Distance d (mm)
2
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