Panasonic 2SD1752A, 2SD1752 Datasheet

Po wer Transistors
2SD1752, 2SD1752A
Silicon NPN epitaxial planar type
For power amplification and low-voltage switching Complementary to 2SB1148 and 2SB1148A
Features
Low collector to emitter saturation voltage V
High-speed switching
Satisfactory linearity of foward current transfer ratio h
Large collector current I
I type package enabling direct soldering of the radiating fin to
C
the printed circuit board, etc. of small electronic equipment.
Absolute Maximum Ratings (T
Parameter
Collector to base voltage Collector to emitter voltage
2SD1752 2SD1752A 2SD1752
2SD1752A Emitter to base voltage Peak collector current Collector current Collector power dissipation
TC=25°C Ta=25°C
Junction temperature Storage temperature
Electrical Characteristics (T
Parameter
Collector cutoff current Emitter cutoff current Collector to emitter voltage
Forward current transfer ratio
Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time
*
h
Rank classification
FE2
Rank Q P
h
FE2
90 to 180 130 to 260
Symbol
2SD1752 2SD1752A
2SD1752 2SD1752A
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
=25˚C)
C
Symbol
I
CBO
I
EBO
V
CEO
h
FE1
*
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
stg
t
f
CE(sat)
FE
=25˚C)
C
Ratings
40 50 20 40
5 20 10 15
1.3
150
–55 to +150
VCB = 40V, IE = 0 VCB = 50V, IE = 0 VEB = 5V, IC = 0
IC = 10mA, IB = 0
VCE = 2V, IC = 0.1A VCE = 2V, IC = 3A IC = 10A, IB = 0.33A IC = 10A, IB = 0.33A VCE = 10V, IC = 0.5A, f = 10MHz VCB = 10V, IE = 0, f = 1MHz
IC = 3A, IB1 = 0.1A, IB2 = – 0.1A, VCC = 20V
Unit
V
V
V A A
W
˚C ˚C
Conditions
10.2±0.3
7.2±0.3
+0.3
–0.
10.0
7.2±0.3
7.0±0.3
3.0±0.2
0.8±0.21.0±0.2
4.6±0.4
7.0±0.3
1.1±0.1
123
4.6±0.4
min
20 40 45 90
1.1±0.1
0.75±0.1
2.3±0.2
213
2.0±0.2
3.0±0.2
0.75±0.1
2.3±0.2
1.0 max.
typ
120 200
0.3
0.4
0.1
Unit: mm
3.5±0.2
0.85±0.1
0.4±0.1
1:Base 2:Collector 3:Emitter I Type Package
Unit: mm
3.5±0.2 0 to 0.15
1.01.0
2.5
0.5 max.
0.9±0.1
0 to 0.15
1:Base 2:Collector 3:Emitter I Type Package (Y)
max
Unit
50 50 50
µA
µA
V
260
0.6
1.5
V V
MHz
pF
µs µs µs
2.5±0.2
2.5±0.2
1
Po wer Transistors 2SD1752, 2SD1752A
PC—Ta IC—V
20
) W
(
(1)
(1)
C
15
10
5
(2)
(2)
Collector power dissipation P
0
0 16040 12080 14020 10060
Ambient temperature Ta (˚C
) V
(
10
BE(sat)
3
25˚C
1
0.3
0.1
0.03
Base to emitter saturation voltage V
0.01
0.1 301010.3 3
Collector current IC (A
(1) TC=Ta (2) Without heat sink
V
BE(sat)—IC
–25˚C
TC=100˚C
(P
=1.3W)
C
IC/IB=20
)
CE
10
IB=100mA
8
) A
(
C
6
4
Collector current I
2
0
0654132
)
Collector to emitter voltage VCE (V
90mA
hFE—I
1000
FE
300
TC=100˚C
25˚C
100
–25˚C
30
10
3
Forward current transfer ratio h
1
0.1 301010.3 3
Collector current IC (A
TC=25˚C
80mA
70mA
60mA
50mA 40mA
30mA
20mA
10mA
C
VCE=2V
)
) V
(
10
CE(sat)
0.3
0.1
0.03
0.01
Collector to emitter saturation voltage V
)
1000
300
) MHz
100
(
T
30
10
Transition frequency f
0.3
0.1
V
CE(sat)—IC
3
1
0.1 301010.3 3
TC=100˚C
25˚C
Collector current IC (A
fT—I
C
VCE=10V f=1MHz T
C
3
1
0.01 0.1 1 100.03 0.3 3
Collector current IC (A
IC/IB=20
–25˚C
)
=25˚C
)
100
30
) µs
(
10
f
,t
stg
3
,t
on
1
0.3
0.1
Switching time t
0.03
0.01 054132
Collector current IC (A
2
ton, t
, tf — I
stg
C
Pulsed tw=1ms Duty cycle=1%
=30(IB1=–IB2)
I
C/IB
=20V
V
CC
T
=25˚C
C
t
t
t
Area of safe operation (ASO)
100
30
I
CP
I
)
C
10
A
(
C
3
300ms
on
stg
f
)
1
0.3
0.1
Collector current I
0.03
0.01 1 10 100 10003 30 300
Collector to emitter voltage VCE (V
Non repetitive pulse
=25˚C
T
C
t=10ms
1ms
2SD1752
2SD1752A
)
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