Panasonic 2SD1751 Datasheet

Po wer Transistors

2SD1751

Silicon NPN triple diffusion planar type

For power amplification
Complementary to 2SB1170

Features

■

●

High forward current transfer ratio hFE which has satisfactory
linearity

●

Low collector to emitter saturation voltage V

●

I type package enabling direct soldering of the radiating fin to
the printed circuit board, etc. of small electronic equipment.

Absolute Maximum Ratings (T

■

Parameter

Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation

TC=25°C
Ta=25°C

Junction temperature
Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

CP

I

C

P

C

T

j

T

stg

CE(sat)

=25˚C)

C

Ratings

60
60

6
4
2

15

1.3

150

–55 to +150

Unit

V
V
V
A
A

W

˚C
˚C

10.2±0.3

7.2±0.3

+0.3

–0.

10.0

7.2±0.3

7.0±0.3

3.0±0.2

0.8±0.21.0±0.2

4.6±0.4

7.0±0.3

1.1±0.1

123

4.6±0.4

1.1±0.1

0.75±0.1

2.3±0.2

213

2.0±0.2

3.0±0.2

0.75±0.1

2.3±0.2

3.5±0.2

1:Base
2:Collector
3:Emitter
I Type Package

3.5±0.2

1.0 max.

2.5

0.5 max.

1:Base
2:Collector
3:Emitter
I Type Package (Y)

Unit: mm

0.85±0.1

0.4±0.1

Unit: mm

0 to 0.15

0.9±0.1
0 to 0.15

1.01.0

2.5±0.2

2.5±0.2

Electrical Characteristics (T

■

Parameter

Collector cutoff current

Emitter cutoff current
Collector to emitter voltage

Forward current transfer ratio

Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time

*

h

Rank classification

FE2

Rank Q P

h

FE2

70 to 150 120 to 250

C

Symbol

I

CES

I

CEO

I

EBO

V

CEO

h

FE1

*

h

FE2

V

BE

V

CE(sat)

f

T

t

on

t

stg

t

f

=25˚C)

Conditions

VCE = 60V, VBE = 0
VCE = 30V, IB = 0
VEB = 6V, IC = 0
IC = 30mA, IB = 0
VCE = 4V, IC = 0.1A
VCE = 4V, IC = 1A
VCE = 4V, IC = 1A
IC = 2A, IB = 0.2A
VCE = 10V, IC = 0.5A, f = 1MHz

IC = 1A, IB1 = 0.1A, IB2 = – 0.1A

min

60
35
70

typ

20

0.2

3.5

0.7

max

200
300

1

250

1.2
2

Unit

µA
µA

mA

V

V
V

MHz

µs
µs
µs

1

Po wer Transistors 2SD1751

PC—Ta IC—V

20

)
W

(

(1)

C

15

10

5

(2)

Collector power dissipation P

0

0 16040 12080 14020 10060

Ambient temperature Ta (˚C

)

100

V

(

30

CE(sat)

10

3

1

0.3

0.1

0.03

0.01

Collector to emitter saturation voltage V

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

(1) TC=Ta
(2) Without heat sink

V

CE(sat)—IC

(P

=1.3W)

C

)

IC/IB=10

TC=100˚C

25˚C

–25˚C

)

CE

5

4

)
A

(

C

3

2

Collector current I

1

0

012108264

IB=100mA

Collector to emitter voltage VCE (V

hFE—I

C

10000

3000

FE

1000

TC=100˚C

300

100

Forward current transfer ratio h

25˚C

–25˚C

30

10

3

1

0.01 0.1 1 100.03 0.3 3

Collector current IC (A

TC=25˚C

80mA

50mA
40mA

30mA
20mA

10mA
5mA
1mA

VCE=4V

)

6

5

)
A

(

4

C

3

2

Collector current I

1

0

03.02.52.00.5 1.51.0

)

Base to emitter voltage VBE (V

1000

300

)
MHz

100

(

T

30

10

3

1

Transition frequency f

0.3

0.1

0.01 0.1 1 100.03 0.3 3

IC—V

BE

25˚C

TC=100˚C

–25˚C

fT—I

C

Collector current IC (A

VCE=4V

VCE=10V
f=1MHz
T

=25˚C

C

)

)

Area of safe operation (ASO) R

100

30

)

10

A

(

I

CP

C

3

I

C

1

0.3

0.1

Collector current I

0.03

0.01
1 10 100 10003 30 300

300ms

Non repetitive pulse

=25˚C

T

C

t=10ms

1ms

Collector to emitter voltage VCE (V

)

3

10

)
˚C/W

2

(

10

(t)

th

10

1

Thermal resistance R

–1

10

–4

10

–3

10

2

—t

th(t)

(1) Without heat sink
(2) With a 50 × 50 × 2mm Al heat sink

(1)

(2)

–1

–2

10

Time t (s

1010

110

10

)

3

2

4

10